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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 93W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,552 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.2A TSM
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSM
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,192 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 14A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 14A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,392 |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 100V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
- Power - Max: 900mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock2,528 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN 120V 0.1A SM6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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Package: SC-74, SOT-457 |
Stock6,544 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN 50V 0.15A SMV
- Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock43,188 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.3W SM6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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Package: SC-74, SOT-457 |
Stock2,096 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Capacitance @ Vr, F: 530pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: L-FLAT? |
Stock4,448 |
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Toshiba Semiconductor and Storage |
DIODE SW SCHOTT 20V 50MA CST2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 50mA
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500nA @ 20V
- Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: SOD-882
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SOD-882 |
Stock5,120 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY GP 80V 100MA SC74
- Diode Configuration: 2 Pair CA + CC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SC-74
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Package: SC-74, SOT-457 |
Stock44,670 |
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Toshiba Semiconductor and Storage |
IC CONV BUCK DC/DC 0.5A 8SOP-ADV
- Applications: Converter, LNB
- Voltage - Input: 8 V ~ 27 V
- Number of Outputs: 2
- Voltage - Output: Adjustable
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-SOP Advance (5x5)
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Package: 8-PowerVDFN |
Stock5,712 |
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Toshiba Semiconductor and Storage |
LED LETERAS COOL WHT 5700K 2SMD
- Color: White, Cool
- CCT (K): 5700K
- Flux @ 85°C, Current - Test: -
- Flux @ 25°C, Current - Test: 145 lm (Typ)
- Current - Test: 350mA
- Voltage - Forward (Vf) (Typ): 2.85V
- Lumens/Watt @ Current - Test: 145 lm/W
- CRI (Color Rendering Index): 70
- Current - Max: 1A
- Viewing Angle: 100°
- Mounting Type: Surface Mount
- Package / Case: 1414 (3535 Metric)
- Supplier Device Package: 3535
- Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
- Height - Seated (Max): 0.099" (2.52mm)
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Package: 1414 (3535 Metric) |
Stock3,454 |
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Toshiba Semiconductor and Storage |
MAGNETIC SWITCH OMNIPOLAR SOT23F
- Function: Omnipolar Switch
- Technology: Hall Effect
- Polarization: Either
- Sensing Range: ±4.4mT Trip, ±0.9mT Release
- Test Condition: 25°C
- Voltage - Supply: 2.3 V ~ 5.5 V
- Current - Supply (Max): 1.6mA (Typ)
- Current - Output (Max): 5mA
- Output Type: Push-Pull
- Features: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: SOT-23-3 Flat Leads
- Supplier Device Package: SOT-23F
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Package: SOT-23-3 Flat Leads |
Stock604,878 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV 4CH DARLINGTON 16DIP
- Number of Channels: 4
- Voltage - Isolation: 5000Vrms
- Current Transfer Ratio (Min): 1000% @ 1mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 50µs, 15µs
- Rise / Fall Time (Typ): 40µs, 15µs
- Input Type: DC
- Output Type: Darlington
- Voltage - Output (Max): 300V
- Current - Output / Channel: 150mA
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 1.2V
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock158,880 |
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Toshiba Semiconductor and Storage |
OPTOISOLATR 5KV TRANSISTOR 4-DIP
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Current Transfer Ratio (Min): 50% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 55V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 60mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: 4-DIP
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Package: 4-DIP (0.300", 7.62mm) |
Stock2,000 |
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Toshiba Semiconductor and Storage |
IC LATCH OCTAL D-TYPE 20TSSOP
- Logic Type: D-Type Transparent Latch
- Circuit: 8:8
- Output Type: Tri-State
- Voltage - Supply: 1.65 V ~ 3.6 V
- Independent Circuits: 1
- Delay Time - Propagation: 1.5ns
- Current - Output High, Low: 24mA, 24mA
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Package: 20-TSSOP (0.173", 4.40mm Width) |
Stock2,000 |
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Toshiba Semiconductor and Storage |
IC SWITCH SPST SINGLE USV
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 1
- On-State Resistance (Max): 12Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 1.65V ~ 5.5V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 5pF
- Current - Leakage (IS(off)) (Max): 1µA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
|
Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock29,874 |
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Toshiba Semiconductor and Storage |
AUTOMOTIVE VOLTAGE REGULATOR
- Applications: Power Supply, Automotive Applications
- Voltage - Input: -
- Number of Outputs: 3
- Voltage - Output: 6V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
- Supplier Device Package: 48-HTSSOP
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Package: - |
Stock18,000 |
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Toshiba Semiconductor and Storage |
IC BUFFER INVERT 5.5V 20TSSOP
- Logic Type: Buffer, Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: 3-State
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 2V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Package: - |
Stock6,000 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A VESM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
DIODE SIL CARB 650V 10A TO220F
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 36pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 1 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Package: - |
Stock24,000 |
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Toshiba Semiconductor and Storage |
SMALL LOW RON PCH MOSFETS VDSS:-
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: CST3
- Package / Case: SC-101, SOT-883
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
MCU, CORTEX M4F, VE, 160MHZ, 256
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit
- Speed: 160MHz
- Connectivity: I2C, SIO, SPI, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 87
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: 32K x 8
- RAM Size: 24K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 22x12b SAR
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x14)
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
G3 SIC-SBD 650V 10A DFN8X8
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 650 V
- Capacitance @ Vr, F: 649pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-VSFN Exposed Pad
- Supplier Device Package: 4-DFN-EP (8x8)
- Operating Temperature - Junction: 175°C
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Package: - |
Stock14,625 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: - |
Stock18,000 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 47 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Package: - |
Stock48,000 |
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