Page 82 - Toshiba Semiconductor and Storage Products

TPCC8006-H(TE12LQM
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 22A 8TSON

Package: 8-VDFN Exposed Pad

Stock3,248
TK65S04N1L,LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 65A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,928
TK290A65Y,S4X
Toshiba Semiconductor and Storage

MOSFET TRANSISTOR TO-220SIS PD

Package: TO-220-3 Full Pack

Stock7,764
2SC3668-O,T2CLAF(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

Package: SC-71

Stock6,816
TBC857B,LM
Toshiba Semiconductor and Storage

X34 PB-F SOT-23 TRANSISTOR FOR L

Package: TO-236-3, SC-59, SOT-23-3

Stock24,456
RN1409,LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.2W SMINI

Package: TO-236-3, SC-59, SOT-23-3

Stock77,766
RN2906(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Package: 6-TSSOP, SC-88, SOT-363

Stock4,688
TBAT54,LM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 140MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock29,682
TCR3DM28,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 300MA 4DFN

Package: 4-UDFN Exposed Pad

Stock6,176
TA4808BF(T6L1,NQ)
Toshiba Semiconductor and Storage

IC REG LINEAR 8V 1A PW-MOLD

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock18,300
TCR5AM105A,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 500MA 5DFNB

Package: 4-XDFN Exposed Pad

Stock49,482
74HC594D(BJ)
Toshiba Semiconductor and Storage

IC 8BIT SHIFT REGISTER 16SOIC

Package: 16-SOIC (0.154", 3.90mm Width)

Stock4,784
TC7SET32FU(T5L,JF)
Toshiba Semiconductor and Storage

IC GATE OR 1CH 2-INP USV

Package: 5-TSSOP, SC-70-5, SOT-353

Stock29,442
TLP292-4(V4GBTRE
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Package: 16-SOIC (0.179", 4.55mm Width)

Stock5,778
TLP2770(TP,E
Toshiba Semiconductor and Storage

OPTOISO 5KV TRI-STATE S06L

Package: 6-SOIC (0.295", 7.50mm Width)

Stock2,000
TC74HC4050AP(F)
Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 6V 16DIP

Package: 16-DIP (0.300", 7.62mm)

Stock3,200
74LCX86FT
Toshiba Semiconductor and Storage

X34 PB-F EXCLUSIVE-OR GATE VCC:

Package: 14-TSSOP (0.173", 4.40mm Width)

Stock53,610
TCR5AM18A,LF
Toshiba Semiconductor and Storage

500MA LDO VOUT1.8V DROPOUT90MV I

Package: -

Stock3,216
TCR3DG13,LF
Toshiba Semiconductor and Storage

300MA LDO VOUT=1.3V DROPOUT=195M

Package: 4-XFBGA, CSPBGA

Stock2,144
TCR2DG36-LF
Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock
TPCC8006-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 22A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock3,248
TK65S04N1L,LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 65A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 32.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,928
TK290A65Y,S4X	Toshiba Semiconductor and Storage	MOSFET TRANSISTOR TO-220SIS PD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 5.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,764
2SC3668-O,T2CLAF(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Package: SC-71	Stock6,816
TBC857B,LM	Toshiba Semiconductor and Storage	X34 PB-F SOT-23 TRANSISTOR FOR L Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA Current - Collector Cutoff (Max): 30nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V Power - Max: 320mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	Package: TO-236-3, SC-59, SOT-23-3	Stock24,456
RN1409,LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.2W SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: TO-236-3, SC-59, SOT-23-3	Stock77,766
RN2906(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock4,688
TBAT54,LM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 140MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 140mA Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock29,682
TCR3DM28,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 2.8V 300MA 4DFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 65µA ~ 78µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	Package: 4-UDFN Exposed Pad	Stock6,176
TA4808BF(T6L1,NQ)	Toshiba Semiconductor and Storage	IC REG LINEAR 8V 1A PW-MOLD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 16V Voltage - Output (Min/Fixed): 8V Voltage - Output (Max): - Voltage Dropout (Max): 0.69V @ 1A (Typ) Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 1.7mA ~ 20mA PSRR: 56dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,300
TCR5AM105A,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 500MA 5DFNB Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	Package: 4-XDFN Exposed Pad	Stock49,482
74HC594D(BJ)	Toshiba Semiconductor and Storage	IC 8BIT SHIFT REGISTER 16SOIC Logic Type: Shift Register Output Type: Push-Pull Number of Elements: 1 Number of Bits per Element: 8 Function: - Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	Package: 16-SOIC (0.154", 3.90mm Width)	Stock4,784
TC7SET32FU(T5L,JF)	Toshiba Semiconductor and Storage	IC GATE OR 1CH 2-INP USV Logic Type: OR Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	Package: 5-TSSOP, SC-70-5, SOT-353	Stock29,442
TLP292-4(V4GBTRE	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	Package: 16-SOIC (0.179", 4.55mm Width)	Stock5,778
TLP2770(TP,E	Toshiba Semiconductor and Storage	OPTOISO 5KV TRI-STATE S06L Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/µs Input Type: DC Output Type: Tri-State Current - Output / Channel: 10mA Data Rate: 20MBd Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Rise / Fall Time (Typ): 1.3ns, 1ns Voltage - Forward (Vf) (Typ): 1.5V Current - DC Forward (If) (Max): 8mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO	Package: 6-SOIC (0.295", 7.50mm Width)	Stock2,000
TC74HC4050AP(F)	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 6V 16DIP Logic Type: Buffer, Non-Inverting Number of Elements: 6 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	Package: 16-DIP (0.300", 7.62mm)	Stock3,200
74LCX86FT	Toshiba Semiconductor and Storage	X34 PB-F EXCLUSIVE-OR GATE VCC: Logic Type: XOR (Exclusive OR) Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Max): 40µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.2V ~ 0.75V Logic Level - High: 1.45V ~ 2V Max Propagation Delay @ V, Max CL: 7.5ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOPB Package / Case: 14-TSSOP (0.173", 4.40mm Width)	Package: 14-TSSOP (0.173", 4.40mm Width)	Stock53,610
TCR5AM18A,LF	Toshiba Semiconductor and Storage	500MA LDO VOUT1.8V DROPOUT90MV I Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock3,216
TCR3DG13,LF	Toshiba Semiconductor and Storage	300MA LDO VOUT=1.3V DROPOUT=195M Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.55V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-WCSPE (0.65x0.65)	Package: 4-XFBGA, CSPBGA	Stock2,144
TCR2DG36-LF	Toshiba Semiconductor and Storage	LOW DROPOUT (LDO) IOUT: 200MA PD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.6V Voltage - Output (Max): - Voltage Dropout (Max): 0.11V @ 100mA Current - Output: 200mA Current - Quiescent (Iq): 70 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WCSP (0.79x0.79)	Package: -	Request a Quote
1SV314-TPL3-F	Toshiba Semiconductor and Storage	DIODE VARACTOR 10V SINGLE ESC Capacitance @ Vr, F: 3.4pF @ 2.5V, 1MHz Capacitance Ratio: 2.5 Capacitance Ratio Condition: C0.5/C2.5 Voltage - Peak Reverse (Max): 10 V Diode Type: Single Q @ Vr, F: - Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC	Package: -	Stock23,880
TK3R1P04PL-RQ	Toshiba Semiconductor and Storage	MOSFET N-CHANNEL 40V 58A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock46,824
CRS13-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 1A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 60 V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	Package: -	Stock11,280
2SC6026CT-GR-L3F	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.1A CST3 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100 mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	Package: -	Stock68,700
TB67B000AFG-EL	Toshiba Semiconductor and Storage	600V/2A FULLY INTEGRATED BRUSHLE Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (3) Interface: PWM Technology: IGBT Step Resolution: - Applications: General Purpose Current - Output: 2A Voltage - Supply: 13.5V ~ 16.5V Voltage - Load: 50V ~ 450V Operating Temperature: -30°C ~ 115°C Mounting Type: Surface Mount Package / Case: 42-SOP (0.330", 8.40mm Width), 34 Leads, Exposed Pad Supplier Device Package: 34-HSSOP	Package: -	Stock3,240
TK6R7P06PL-RQ	Toshiba Semiconductor and Storage	MOSFET N-CHANNEL 60V 46A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock3
2SA1201-Y-TE12L-ZC	Toshiba Semiconductor and Storage	PB-F POWER TRANSISTOR PW-MINI PD Transistor Type: PNP Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 500 mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	Package: -	Stock2,322
CRS08-TE85L	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 125°C	Package: -	Request a Quote