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Vishay Semiconductor Diodes Division |
MOD DIODE MAP COMPRESSED
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock2,272 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
MOD DIODE MAP COMPRESSED
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock3,680 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
MOD DIODE MAP COMPRESSED
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock2,192 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 5A AXIAL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 60V
- Capacitance @ Vr, F: 500pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AR, Axial
- Supplier Device Package: DO-204AR
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-204AR, Axial |
Stock6,672 |
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100V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | 500pF @ 5V, 1MHz | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 5A AXIAL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 60V
- Capacitance @ Vr, F: 500pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AR, Axial
- Supplier Device Package: DO-204AR
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-204AR, Axial |
Stock3,712 |
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80V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | 500pF @ 5V, 1MHz | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A AXIAL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 60V
- Capacitance @ Vr, F: 500pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AR, Axial
- Supplier Device Package: DO-204AR
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-204AR, Axial |
Stock6,240 |
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60V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | 500pF @ 5V, 1MHz | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3.3A C16
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3.3A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: 110pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: C-16
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: DO-201AD, Axial |
Stock4,352 |
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100V | 3.3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | 110pF @ 5V, 1MHz | Through Hole | DO-201AD, Axial | C-16 | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 3.3A C16
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 3.3A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: 110pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: C-16
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: DO-201AD, Axial |
Stock3,456 |
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90V | 3.3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | 110pF @ 5V, 1MHz | Through Hole | DO-201AD, Axial | C-16 | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3.0A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: 115pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock270,000 |
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100V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | 115pF @ 5V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2.1A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 2.1A
- Voltage - Forward (Vf) (Max) @ If: 910mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: 38pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock270,000 |
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100V | 2.1A | 910mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | 38pF @ 10V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 780mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 31pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock270,960 |
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60V | 2A | 780mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 600V | 31pF @ 10V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2.1A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 2.1A
- Voltage - Forward (Vf) (Max) @ If: 690mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock390,000 |
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40V | 2.1A | 690mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 20V
- Capacitance @ Vr, F: 350pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock4,448 |
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20V | 3A | 475mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | 350pF @ 5V, 1MHz | Through Hole | DO-201AD, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 15A DO204AR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 540mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.75mA @ 45V
- Capacitance @ Vr, F: 900pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AR, Axial
- Supplier Device Package: DO-204AR
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AR, Axial |
Stock6,288 |
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45V | 15A | 540mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.75mA @ 45V | 900pF @ 5V, 1MHz | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 15A DO204AR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 540mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.75mA @ 40V
- Capacitance @ Vr, F: 900pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AR, Axial
- Supplier Device Package: DO-204AR
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AR, Axial |
Stock2,032 |
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40V | 15A | 540mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.75mA @ 40V | 900pF @ 5V, 1MHz | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 15A DO204AR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 540mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.75mA @ 35V
- Capacitance @ Vr, F: 900pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AR, Axial
- Supplier Device Package: DO-204AR
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AR, Axial |
Stock6,256 |
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35V | 15A | 540mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.75mA @ 35V | 900pF @ 5V, 1MHz | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 30V 15A DO204AR
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 540mV @ 15A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.75mA @ 30V
- Capacitance @ Vr, F: 900pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AR, Axial
- Supplier Device Package: DO-204AR
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AR, Axial |
Stock2,784 |
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30V | 15A | 540mV @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 1.75mA @ 30V | 900pF @ 5V, 1MHz | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE 6A 600V TO-277A SMPC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock2,064 |
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600V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE 6A 200V TO-277A SMPC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock5,616 |
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200V | 6A | 1.05V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE 6A 200V TO-277A SMPC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock87,600 |
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200V | 6A | 1.05V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 90V TO-277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15µA @ 90V
- Capacitance @ Vr, F: 130pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-277, 3-PowerDFN |
Stock159,600 |
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90V | 5A | 880mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15µA @ 90V | 130pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 60V TO-277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 60V
- Capacitance @ Vr, F: 200pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-277, 3-PowerDFN |
Stock2,416 |
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60V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | 200pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 100V TO-277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 680mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15µA @ 100V
- Capacitance @ Vr, F: 130pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-277, 3-PowerDFN |
Stock393,120 |
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100V | 5A | 680mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15µA @ 100V | 130pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 2A 40V DO-214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 40V
- Capacitance @ Vr, F: 130pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock5,184 |
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40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 130pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 2A 30V DO-214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-214AC, SMA |
Stock3,728 |
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30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2.9A TO277A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.6µs
- Current - Reverse Leakage @ Vr: 20µA @ 600V
- Capacitance @ Vr, F: 76pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock2,096 |
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600V | 2.9A (DC) | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 600V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2.9A TO277A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.6µs
- Current - Reverse Leakage @ Vr: 20µA @ 400V
- Capacitance @ Vr, F: 76pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock7,440 |
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400V | 2.9A (DC) | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 400V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2.9A TO277A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.6µs
- Current - Reverse Leakage @ Vr: 20µA @ 200V
- Capacitance @ Vr, F: 76pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock5,648 |
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200V | 2.9A (DC) | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 200V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |