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Vishay Semiconductor Diodes Division |
MOSFET N-CH 100V 180A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 180A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4
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Package: SOT-227-4 |
Stock2,656 |
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MOSFET (Metal Oxide) | 100V | 180A | 10V | 4V @ 250µA | 380nC @ 10V | 10700pF @ 25V | ±20V | - | 480W (Tc) | 6.5 mOhm @ 180A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4 |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 38A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 38A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock6,320 |
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MOSFET (Metal Oxide) | 500V | 38A | 10V | 4V @ 250µA | 420nC @ 10V | 6900pF @ 25V | ±20V | - | 500W (Tc) | 130 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 57A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 57A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock5,344 |
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MOSFET (Metal Oxide) | 500V | 57A | 10V | 4V @ 250µA | 338nC @ 10V | 10000pF @ 25V | ±20V | - | 625W (Tc) | 80 mOhm @ 34A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 38A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 38A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock6,960 |
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MOSFET (Metal Oxide) | 500V | 38A | 10V | 4V @ 250µA | 420nC @ 10V | 6900pF @ 25V | ±20V | - | 500W (Tc) | 130 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 100V 180A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 108A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock3,040 |
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MOSFET (Metal Oxide) | 100V | 180A | 10V | 4V @ 250µA | 380nC @ 10V | 10700pF @ 25V | ±20V | - | 480W (Tc) | 6.5 mOhm @ 108A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 200V 220A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 220A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.1V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 50V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 789W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 150A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock5,920 |
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MOSFET (Metal Oxide) | 200V | 220A | 10V | 5.1V @ 500µA | 350nC @ 10V | 21000pF @ 50V | ±30V | - | 789W (Tc) | 7 mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 72A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 72A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1136W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock6,400 |
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MOSFET (Metal Oxide) | 500V | 72A | 10V | 4V @ 250µA | 338nC @ 10V | 10000pF @ 25V | ±20V | - | 1136W (Tc) | 80 mOhm @ 34A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 200V 108A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 108A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10720pF @ 50V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 405W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: -
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock7,216 |
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MOSFET (Metal Oxide) | 200V | 108A | 10V | 5.5V @ 250µA | 161nC @ 10V | 10720pF @ 50V | ±30V | - | 405W (Tc) | 14 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | - | SOT-227 | SOT-227-4, miniBLOC |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 40A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 543W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock3,904 |
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MOSFET (Metal Oxide) | 500V | 40A | 10V | 4V @ 250µA | 420nC @ 10V | 6900pF @ 25V | ±20V | - | 543W (Tc) | 130 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Vishay Semiconductor Diodes Division |
POWER MODULE 100V 435A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock4,736 |
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MOSFET (Metal Oxide) | 100V | - | 10V | - | 375nC @ 10V | - | ±20V | - | - | - | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 100V 190A SOT227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 190A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 568W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 180A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock3,680 |
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MOSFET (Metal Oxide) | 100V | 190A | 10V | 4.35V @ 250µA | 250nC @ 10V | 10700pF @ 25V | ±20V | - | 568W (Tc) | 6.5 mOhm @ 180A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |