|
|
Vishay Semiconductor Diodes Division |
SCR 1600V 360A TO-93
- Voltage - Off State: 1600V
- Voltage - Gate Trigger (Vgt) (Max): 3V
- Current - Gate Trigger (Igt) (Max): 150mA
- Voltage - On State (Vtm) (Max): 1.55V
- Current - On State (It (AV)) (Max): 230A
- Current - On State (It (RMS)) (Max): 360A
- Current - Hold (Ih) (Max): 600mA
- Current - Off State (Max): 30mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A, 5000A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis, Stud Mount
- Package / Case: TO-209AB, TO-93-4, Stud
- Supplier Device Package: TO-209AB (TO-93)
|
Package: TO-209AB, TO-93-4, Stud |
Stock6,592 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE ZENER 17.26V 500MW SOD80
- Voltage - Zener (Nom) (Vz): 17.26V
- Tolerance: -
- Power - Max: 500mW
- Impedance (Max) (Zzt): 23 Ohms
- Current - Reverse Leakage @ Vr: 40µA @ 16V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: SOD-80 QuadroMELF
|
Package: SOD-80 Variant |
Stock5,248 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE ZENER 800MW SMF DO219
- Voltage - Zener (Nom) (Vz): 16V
- Tolerance: -
- Power - Max: 800mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 12V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
|
Package: DO-219AB |
Stock2,272 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE ZENER 150V 0.8W DO-219AB
- Voltage - Zener (Nom) (Vz): 150V
- Tolerance: -
- Power - Max: 800mW
- Impedance (Max) (Zzt): 300 Ohms
- Current - Reverse Leakage @ Vr: 1µA @ 110V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
|
Package: DO-219AB |
Stock4,256 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE ZENER 20V 1W DO213AB
- Voltage - Zener (Nom) (Vz): 20V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 22 Ohms
- Current - Reverse Leakage @ Vr: 5µA @ 15.2V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
|
Package: DO-213AB, MELF (Glass) |
Stock2,496 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE ZENER 2.7V 500MW SOD80
- Voltage - Zener (Nom) (Vz): 2.7V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80 MiniMELF
|
Package: DO-213AC, MINI-MELF, SOD-80 |
Stock6,762,000 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE ZENER 30V 300MW SOT23
- Configuration: 1 Pair Common Cathode
- Voltage - Zener (Nom) (Vz): 30V
- Tolerance: ±5%
- Power - Max: 300mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 22.5V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,760 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2.1A TO277A
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2.1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.2µs
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 37pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: TO-277, 3-PowerDFN |
Stock3,008 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 4A TO277A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5µs
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-277, 3-PowerDFN |
Stock7,040 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: DO-214AB, SMC |
Stock4,304 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 70pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-204AC, DO-15, Axial |
Stock6,368 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-204AL, DO-41, Axial |
Stock2,112 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE RECT 3A 600V 50NS DO-214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-214AA, SMB |
Stock3,600 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A MPG06
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 600ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: MPG06, Axial
- Supplier Device Package: MPG06
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: MPG06, Axial |
Stock4,560 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO220AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-220AA |
Stock6,032 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 9µA @ 500V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 |
Stock22,584 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A TO247AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.08V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 28ns
- Current - Reverse Leakage @ Vr: 50µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: TO-247-3 |
Stock9,396 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE MODULE 1.6KV 320A MAGNAPAK
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io) (per Diode): 320A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50mA @ 1600V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: 3-MAGN-A-PAK?
- Supplier Device Package: MAGN-A-PAK?
|
Package: 3-MAGN-A-PAK? |
Stock7,696 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 30A TO263AC
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 810mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 100V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
- Supplier Device Package: TO-263AC (SMPD)
|
Package: TO-263-3, D2Pak (2 Leads + Tab) Variant |
Stock3,344 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE ARRAY SCHOTTKY 60V ITO220
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 60V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock8,004 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE 10A 150V 20NS TO-220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
Package: TO-220-3 |
Stock4,960 |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE STANDARD 100V 4A TO277A
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 4A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 2µA @ 100V
- Operating Temperature - Junction: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
|
Package: TO-277, 3-PowerDFN |
Stock4,912 |
|
|
|
Vishay Semiconductor Diodes Division |
TVS DIODE 5.8VWM 10.5VC DO220AA
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5.8V
- Voltage - Breakdown (Min): 6.45V
- Voltage - Clamping (Max) @ Ipp: 10.5V
- Current - Peak Pulse (10/1000µs): 23.8A
- Power - Peak Pulse: 250W
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -65°C ~ 185°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
|
Package: DO-220AA |
Stock6,354 |
|
|
|
Vishay Semiconductor Diodes Division |
TVS DIODE 10.2VWM 16.7VC AXIAL
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 10.2V
- Voltage - Breakdown (Min): 11.4V
- Voltage - Clamping (Max) @ Ipp: 16.7V
- Current - Peak Pulse (10/1000µs): 24A
- Power - Peak Pulse: 400W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
|
Package: DO-204AL, DO-41, Axial |
Stock5,220 |
|
|
|
Vishay Semiconductor Diodes Division |
TVS DIODE 70VWM 113VC SMC
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 70V
- Voltage - Breakdown (Min): 77.8V
- Voltage - Clamping (Max) @ Ipp: 113V
- Current - Peak Pulse (10/1000µs): 13.3A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-215AB, SMC Gull Wing
- Supplier Device Package: DO-215AB (SMCG)
|
Package: DO-215AB, SMC Gull Wing |
Stock7,344 |
|
|
|
Vishay Semiconductor Diodes Division |
TVS DIODE 6.5VWM 11.2VC SMC
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 6.5V
- Voltage - Breakdown (Min): 7.22V
- Voltage - Clamping (Max) @ Ipp: 11.2V
- Current - Peak Pulse (10/1000µs): 133.9A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMCJ)
|
Package: DO-214AB, SMC |
Stock6,642 |
|
|
|
Vishay Semiconductor Diodes Division |
TVS DIODE 78VWM DO214AB (SMC)
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 78V
- Voltage - Breakdown (Min): 86.7V
- Voltage - Clamping (Max) @ Ipp: 126V
- Current - Peak Pulse (10/1000µs): 23.8A
- Power - Peak Pulse: 3000W (3kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMCJ)
|
Package: DO-214AB, SMC |
Stock8,730 |
|
|
|
Vishay Semiconductor Diodes Division |
TVS DIODE 22VWM 35.5VC SMA
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 22V
- Voltage - Breakdown (Min): 24.4V
- Voltage - Clamping (Max) @ Ipp: 35.5V
- Current - Peak Pulse (10/1000µs): 11.3A
- Power - Peak Pulse: 400W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
|
Package: DO-214AC, SMA |
Stock897,600 |
|