IXYS Products

IXGP7N60C

IXYS

IGBT 600V 14A 54W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
• Power - Max: 54W
• Switching Energy: 70µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 25nC
• Td (on/off) @ 25°C: 9ns/65ns
• Test Condition: 480V, 7A, 22 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Package: TO-220-3

IXGR45N120

IXYS

IGBT 1200V 90A ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

Package: ISOPLUS247?

IXYH40N65C3D1

IXYS

IGBT 650V 80A 300W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
• Power - Max: 300W
• Switching Energy: 830µJ (on), 360µJ (off)
• Input Type: Standard
• Gate Charge: 66nC
• Td (on/off) @ 25°C: 23ns/110ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 120ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Package: TO-247-3

IXGP70N33TBM-A

IXYS

IGBT 330V TO-220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 330V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Package: TO-220-3

IXYA50N65C3

IXYS

IGBT 650V 130A 600W TO263

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 130A
• Current - Collector Pulsed (Icm): 250A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
• Power - Max: 600W
• Switching Energy: 1.3mJ (on), 370µJ (off)
• Input Type: Standard
• Gate Charge: 80nC
• Td (on/off) @ 25°C: 22ns/80ns
• Test Condition: 400V, 36A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXGH32N170

IXYS

IGBT 1700V 75A 350W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
• Power - Max: 350W
• Switching Energy: 11mJ (off)
• Input Type: Standard
• Gate Charge: 155nC
• Td (on/off) @ 25°C: 45ns/270ns
• Test Condition: 1020V, 32A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

Package: TO-247-3

MWI45-12T6K

IXYS

MOD IGBT SIXPACK RBSOA 1200V E1

• IGBT Type: Trench
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 43A
• Power - Max: 160W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
• Current - Collector Cutoff (Max): 400µA
• Input Capacitance (Cies) @ Vce: 1.81nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E1
• Supplier Device Package: E1

Package: E1

IXTV250N075T

IXYS

MOSFET N-CH 75V 250A PLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 550W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS220
• Package / Case: TO-220-3, Short Tab

Package: TO-220-3, Short Tab

IXTQ220N055T

IXYS

MOSFET N-CH 55V 220A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 430W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

Package: TO-3P-3, SC-65-3

IXTQ200N075T

IXYS

MOSFET N-CH 75V 200A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 430W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

Package: TO-3P-3, SC-65-3

IXFN23N100

IXYS

MOSFET N-CH 1000V 23A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 23A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

Package: SOT-227-4, miniBLOC

IXFR30N110P

IXYS

MOSFET N-CH 1100V 16A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1100V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 320W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: ISOPLUS247?

Package: ISOPLUS247?

IXFH24N50Q

IXYS

MOSFET N-CH 500V 24A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

Package: TO-247-3

IXTP1R4N120P

IXYS

MOSFET N-CH 1200V 1.4A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 13 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Package: TO-220-3

IXTP4N65X2

IXYS

MOSFET N-CH 650V 4A X2 TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

Package: TO-220-3

IXFH12N50F

IXYS

MOSFET N-CH 500V 12A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 180W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXFH)
• Package / Case: TO-247-3

Package: TO-247-3

VCA105-08IO7

IXYS

MOD THYRISTOR 800V 105A ECO-PAC2

• Structure: Common Anode - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 105A
• Current - On State (It (RMS)) (Max): 180A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2

Package: ECO-PAC2

MCC19-12IO8B

IXYS

MOD THYRISTOR DUAL 1200V TO240AA

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 25A
• Current - On State (It (RMS)) (Max): 40A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

Package: TO-240AA

FSS100-008A

IXYS

DIODE ARRAY SCHOTTKY 80V ISOPLUS

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 90A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 75A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 80V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5 (3 leads)
• Supplier Device Package: ISOPLUS i4-PAC?

Package: i4-Pac?-5 (3 leads)

DSA30C45HB

IXYS

DIODE ARRAY SCHOTTKY 45V TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 740mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300nA @ 45V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

Package: TO-247-3

VUO52-08NO1

IXYS

RECT BRIDGE 3PH 54A 800V V1-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 54A
• Voltage - Forward (Vf) (Max) @ If: 1.13V @ 20A
• Current - Reverse Leakage @ Vr: 40µA @ 800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1-A
• Supplier Device Package: V1-A

Package: V1-A

IXDE514SIA

IXYS

IC GATE DRIVER 14A 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 1V, 2.5V
• Current - Peak Output (Source, Sink): 14A, 14A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

IXCY60M35

IXYS

IC CURRENT REGULATOR DPAK

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: -
• Current - Output: 60mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

W6672TJ320

IXYS

DIODE GEN PURP 1.75KV 6672A -

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1750 V
• Current - Average Rectified (Io): 6672A
• Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 52 µs
• Current - Reverse Leakage @ Vr: 100 mA @ 1750 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF
• Supplier Device Package: TO-200AF
• Operating Temperature - Junction: -40°C ~ 160°C

Package: -

Request a Quote

MCC56-14IO1

IXYS

BIPOLAR MODULE - THYRISTOR TO-2

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.4 kV
• Current - On State (It (AV)) (Max): 64 A
• Current - On State (It (RMS)) (Max): 100 A
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

Package: -

Request a Quote

DSEP2X61-12B

IXYS

DIODE MOD GP 1.2KV 60A SOT227B

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 60 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 70 ns
• Current - Reverse Leakage @ Vr: 200 µA @ 200 V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

Package: -

Request a Quote

MCNA75PD2200TB

IXYS

BIPOLAR MODULE - THYRISTOR TO-2

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 75 A
• Current - On State (It (RMS)) (Max): 118 A
• Voltage - Gate Trigger (Vgt) (Max): 1.4 V
• Current - Gate Trigger (Igt) (Max): 95 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

Package: -

Request a Quote

MMPA60P1000TLA

IXYS

MOSFET 2N-CH 1000V Y3-LI

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: Y3-Li
• Supplier Device Package: Y3-Li

Package: -

Request a Quote

IXFT70N65X3HV

IXYS

MOSFET 70A 650V X3 TO268HV

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Package: -

Request a Quote

IXTM50N20

IXYS

MOSFET N-CH 200V 50A TO204AE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-204AE
• Package / Case: TO-204AE

Package: -

Request a Quote