|
|
Diodes Incorporated |
MOSFET N-CH 20V 3.3A U-WLB1010-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 720mW
- Rds On (Max) @ Id, Vgs: 40mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-WLB1010-4
- Package / Case: 4-UFBGA, WLBGA
|
Package: - |
Stock10,467 |
|
MOSFET (Metal Oxide) | 20 V | 3.3A (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 47 nC @ 8 V | 1400 pF @ 10 V | ±8V | - | 720mW | 40mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1010-4 | 4-UFBGA, WLBGA |
|
|
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W
- Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock3,795 |
|
MOSFET (Metal Oxide) | 40 V | 11.5A (Ta), 49.8A (Tc) | 4.5V, 10V | 3V @ 250µA | 11.2 nC @ 10 V | 750 pF @ 20 V | ±20V | - | 3.1W | 13.7mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
|
|
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6239 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 153A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 116 nC @ 10 V | 6239 pF @ 50 V | ±20V | - | 4W (Ta), 150W (Tc) | 4.2mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
|
|
Diodes Incorporated |
2N7002 FAMILY SOT523 T&R 10K
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 334mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 334mA (Ta) | 1.8V, 5V | 1V @ 250µA | 0.8 nC @ 4.5 V | 41 pF @ 30 V | ±20V | - | 400mW (Ta) | 2Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
|
|
Diodes Incorporated |
MOSFET N-CH 100V 100A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 187W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: - |
Stock120 |
|
MOSFET (Metal Oxide) | 100 V | 100A (Ta) | 10V | 4V @ 250µA | 56.4 nC @ 10 V | 4468 pF @ 50 V | ±20V | - | 2.5W (Ta), 187W (Tc) | 9.5mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
Diodes Incorporated |
MOSFET BVDSS: 101V~250V POWERDI5
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
MOSFET BVDSS: 41V~60V POWERDI506
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 37.5W (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 10.6A (Ta), 37.1A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 17 nC @ 10 V | 864 pF @ 30 V | ±20V | - | 3W (Ta), 37.5W (Tc) | 16mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
|
|
Diodes Incorporated |
MOSFET N-CH 40V 22A PWRDI5060
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock35,040 |
|
MOSFET (Metal Oxide) | 40 V | 22A (Ta), 100A (Tc) | 5V, 10V | 2.5V @ 250µA | 49 nC @ 10 V | 3367 pF @ 20 V | ±20V | - | 2.7W (Ta) | 3.3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT23 T&R 3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 830mW
- Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: - |
Stock2,514 |
|
MOSFET (Metal Oxide) | 20 V | 4.6A (Tc) | 1.8V, 4.5V | 950mV @ 250µA | 8.2 nC @ 10 V | 118 pF @ 10 V | ±8V | - | 830mW | 44mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
Diodes Incorporated |
MOSFET N-CH 240V 270MA SOT23 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240 V
- Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 76.8 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 11Ohm @ 300mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: - |
Stock30,000 |
|
MOSFET (Metal Oxide) | 240 V | 270mA (Ta) | 4.5V, 10V | 3V @ 250µA | 3.7 nC @ 10 V | 76.8 pF @ 25 V | ±20V | - | 750mW (Ta) | 11Ohm @ 300mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
Diodes Incorporated |
MOSFET P-CH 20V 1.5A SOT323 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 627 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
|
Package: - |
Stock9,000 |
|
MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 900mV @ 250µA | - | 627 pF @ 10 V | ±10V | - | 350mW (Ta) | 100mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
|
|
Diodes Incorporated |
MOSFET BVDSS: 25V~30V TSOT26 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 749 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: - |
Stock9,000 |
|
MOSFET (Metal Oxide) | 30 V | 5.4A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 14.3 nC @ 10 V | 749 pF @ 15 V | ±20V | - | 1.2W (Ta) | 42mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
|
|
Diodes Incorporated |
MOSFET BVDSS: 651V~800V TO252 T&
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 264 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 4.7A (Tc) | 10V | 5V @ 250µA | 9.8 nC @ 10 V | 264 pF @ 100 V | ±30V | - | 57W (Tc) | 1.4Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
Diodes Incorporated |
MOSFET BVDSS: 25V~30V U-DFN2020-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
|
Package: - |
Stock9,000 |
|
MOSFET (Metal Oxide) | 30 V | 8.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 7 nC @ 10 V | 393 pF @ 15 V | ±20V | - | 700mW (Ta) | 17mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
|
|
Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock5,700 |
|
MOSFET (Metal Oxide) | 60 V | 15.9A (Ta), 45.4A (Tc) | 4.5V, 10V | 3V @ 250µA | 33.5 nC @ 10 V | 1925 pF @ 30 V | ±16V | - | 3.6W (Ta), 29.4W (Tc) | 9.5mOhm @ 13.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
|
|
Diodes Incorporated |
MOSFET BVDSS: 31V~40V PowerDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 881 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta), 37.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 13.6A (Ta), 49A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 12.3 nC @ 10 V | 881 pF @ 20 V | ±20V | - | 2.9W (Ta), 37.5W (Tc) | 8.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
|
|
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 57.7W (Tc)
- Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 11.5A (Ta), 49.8A (Tc) | 4.5V, 10V | 3V @ 250µA | 11.2 nC @ 10 V | 750 pF @ 20 V | ±20V | - | 3.1W (Ta), 57.7W (Tc) | 13.7mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
|
|
Diodes Incorporated |
2N7002 FAMILY SOT523 T&R 3K
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 334mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 334mA (Ta) | 1.8V, 5V | 1V @ 250µA | 0.8 nC @ 4.5 V | 41 pF @ 30 V | ±20V | - | 400mW (Ta) | 2Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
|
|
Diodes Incorporated |
MOSFET N-CH 12V 15A 6UDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6
- Package / Case: 6-UDFN Exposed Pad
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 15A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 47 nC @ 10 V | 2385 pF @ 6 V | ±8V | - | 2.1W (Ta) | 4.8mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 | 6-UDFN Exposed Pad |
|
|
Diodes Incorporated |
MOSFET P-CH 60V PWRDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI3333-8
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock26,985 |
|
MOSFET (Metal Oxide) | 60 V | 6.1A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 24.1 nC @ 10 V | 1293 pF @ 30 V | ±20V | - | 1.2W (Ta) | 50mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
|
|
Diodes Incorporated |
MOSFET BVDSS: 41V~60V SO-8 T&R 2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 5.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 22.4 nC @ 10 V | 1287 pF @ 25 V | ±20V | - | 1.5W (Ta) | 40mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Diodes Incorporated |
MOSFET N-CH 20V 6.7A TSOT26 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: - |
Stock9,000 |
|
MOSFET (Metal Oxide) | 20 V | 6.7A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 7.5 nC @ 4.5 V | 667 pF @ 10 V | ±8V | - | 1.2W (Ta) | 24mOhm @ 6.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
|
|
Diodes Incorporated |
MOSFET BVDSS: 41V~60V SOT323 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 380mA (Ta) | 1.8V, 5V | 1V @ 250µA | 1.4 nC @ 10 V | 39 pF @ 25 V | ±12V | - | 400mW (Ta) | 2Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
|
|
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock5,610 |
|
MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 4V @ 250µA | 8 nC @ 10 V | 544 pF @ 50 V | ±20V | - | 1.3W (Ta) | 32mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
|
|
Diodes Incorporated |
MOSFET N-CH 60V 10.4A 8SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: - |
Stock8,796 |
|
MOSFET (Metal Oxide) | 60 V | 10.4A (Ta) | 4.5V, 10V | 2V @ 250µA | 22.2 nC @ 10 V | 1522 pF @ 30 V | ±20V | - | 1.2W (Ta) | 11mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI10
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI1012-8
- Package / Case: 8-PowerSFN
|
Package: - |
Stock4,500 |
|
MOSFET (Metal Oxide) | 100 V | 215A (Tc) | 10V | 4V @ 250µA | 124.4 nC @ 10 V | 8450 pF @ 50 V | ±20V | - | 5.8W (Ta), 230.8W (Tc) | 2.5mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI1012-8 | 8-PowerSFN |
|
|
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 15.7A (Ta), 100A (Tc) | 10V | 4V @ 250µA | 41.9 nC @ 10 V | 2082 pF @ 25 V | ±20V | - | 2.8W (Ta), 136W (Tc) | 7.6mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
|
|
Diodes Incorporated |
MOSFET BVDSS: 41V-60V SOT323 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 174mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): ±20V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 174mA (Ta) | ±20V | 2V @ 1mA | 0.56 nC @ 10 V | 24.6 pF @ 25 V | ±20V | - | 320mW (Ta) | 10Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |