Page 91 - Diodes Incorporated Products - Transistors - FETs, MOSFETs - Single

ZXMP6A16GTA
Diodes Incorporated

MOSFET P-CH SOT223

Package: -

Stock7,568
ZXMN3A02N8TC
Diodes Incorporated

MOSFET N-CH 30V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock415,164
DMN4015LK3-13
Diodes Incorporated

MOSFET N-CH 40V 13.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock420,612

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
ZXMP6A16GTA	Diodes Incorporated	MOSFET P-CH SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: -	Package: -	Stock7,568	MOSFET (Metal Oxide)	60V	-	-	-	-	-	-	-	-	-	-	Surface Mount	SOT-223	-
ZXMN3A02N8TC	Diodes Incorporated	MOSFET N-CH 30V 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock415,164	MOSFET (Metal Oxide)	30V	7.3A (Ta)	4.5V, 10V	1V @ 250µA	26.8nC @ 10V	1400pF @ 25V	±20V	-	1.56W (Ta)	25 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMN4015LK3-13	Diodes Incorporated	MOSFET N-CH 40V 13.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2072pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.19W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock420,612	MOSFET (Metal Oxide)	40V	13.5A (Ta)	4.5V, 10V	3V @ 250µA	42nC @ 10V	2072pF @ 20V	±20V	-	2.19W (Ta)	15 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63