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Diodes Incorporated |
MOSFET N-CH 30V 115MA SOT523
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 240mW (Ta)
- Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 4V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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Package: - |
Stock30,000 |
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MOSFET (Metal Oxide) | 30 V | 115mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | 0.55 nC @ 10 V | 48 pF @ 5 V | ±20V | - | 240mW (Ta) | 5Ohm @ 10mA, 4V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V U-DFN2020
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 5A (Ta) | 4.5V, 10V | 3V @ 250µA | 5.4 nC @ 10 V | 258 pF @ 50 V | ±20V | - | 800mW (Ta) | 52mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
Stock26,634 |
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MOSFET (Metal Oxide) | 80 V | 17A (Ta), 70A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 37.7 nC @ 10 V | 2254 pF @ 40 V | ±20V | - | 1.2W (Ta), 50W (Tc) | 6.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2737 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 65W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 23A (Ta), 96A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 36.9 nC @ 10 V | 2737 pF @ 20 V | ±20V | - | 3.6W (Ta), 65W (Tc) | 4.3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 40V PWRDI3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
Stock11,850 |
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MOSFET (Metal Oxide) | 40 V | 24A (Ta), 100A (Tc) | 5V, 10V | 2.5V @ 250µA | 40.1 nC @ 10 V | 2798 pF @ 20 V | ±20V | - | 2.62W (Ta), 65.2W (Tc) | 3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 100V PWRDI5060
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 8.4A (Ta), 50.5A (Tc) | 6V, 10V | 4V @ 250µA | 30.1 nC @ 10 V | 2343 pF @ 50 V | ±20V | - | 1.5W (Ta), 55W (Tc) | 14.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 3.2A SOT-23-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 3.2A (Ta) | - | 1V @ 250µA | 9.6 nC @ 10 V | 380 pF @ 25 V | - | - | - | 110mOhm @ 2.2A, 10V | - | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 30A (Ta), 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 67 nC @ 10 V | 4366 pF @ 15 V | ±20V | - | 1.1W | 1.7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 60A POWERDI3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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Package: - |
Stock26,295 |
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MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 42 nC @ 10 V | 2000 pF @ 15 V | ±20V | - | 1W (Ta) | 5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT523 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 15 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 280mW (Ta)
- Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 300mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.35 nC @ 4.5 V | 21.5 pF @ 15 V | ±10V | - | 280mW (Ta) | 3Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V TSOT26 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 6 nC @ 4.5 V | 443 pF @ 10 V | ±10V | - | 1.2W (Ta) | 80mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V SO-8 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 12A (Ta), 42A (Tc) | 10V | 4V @ 250µA | 29.8 nC @ 10 V | 2085 pF @ 50 V | ±20V | - | 1.4W (Ta) | 9mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 14A (Ta), 86A (Tc) | 10V | 4V @ 250µA | 30 nC @ 10 V | 2085 pF @ 50 V | ±20V | - | 1.6W (Ta), 100W (Tc) | 8.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 9.4A 6UDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.06W (Ta)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 9.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 15.3 nC @ 10 V | 925 pF @ 30 V | ±20V | - | 1.06W (Ta) | 18mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | U-DFN2020-6 (SWP) (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 60V 19.7A/100A PWRDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 19.7A (Ta), 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 48.7 nC @ 10 V | 3150 pF @ 30 V | ±20V | - | 2.38W (Ta), 75W (Tc) | 4.1mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 40V 9.4A TO252 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 604 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.14W (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 9.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 12.9 nC @ 10 V | 604 pF @ 20 V | ±20V | - | 2.14W (Ta) | 30mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
2N7002 FAMILY SOT523 T&R 10K
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 343mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.04 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 343mA (Ta) | 5V, 10V | 2.5V @ 1mA | 1.04 nC @ 10 V | 41 pF @ 30 V | ±20V | - | 400mW (Ta) | 2Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Diodes Incorporated |
MOSFET P-CH 60V 2.4A SOT23 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW
- Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock21,417 |
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MOSFET (Metal Oxide) | 60 V | 2.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 8.3 nC @ 10 V | 512 pF @ 30 V | ±20V | - | 920mW | 155mOhm @ 2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V SOT26 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 1.5A (Ta) | 6V, 10V | 4V @ 250µA | 7.7 nC @ 10 V | 405 pF @ 50 V | ±20V | - | 1.1W (Ta) | 250mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 60V 17.3A/82A PWRDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type Q)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock14,835 |
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MOSFET (Metal Oxide) | 60 V | 17.3A (Ta), 82A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 37.5 nC @ 10 V | 2130 pF @ 30 V | ±20V | - | 2.8W (Ta), 62.5W (Tc) | 6.2mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 (Type Q) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 101V~250V TO252 T&
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 60 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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MOSFET (Metal Oxide) | 120 V | 86A (Tc) | 10V | 4V @ 250µA | 44 nC @ 10 V | 3142 pF @ 60 V | ±20V | - | 2W (Ta) | 8.9mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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MOSFET (Metal Oxide) | 40 V | 73A (Tc) | 10V | 4V @ 250µA | 12.1 nC @ 10 V | 897 pF @ 20 V | ±20V | - | 3.3W (Ta), 68W (Tc) | 7.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 1.7A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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MOSFET (Metal Oxide) | 30 V | 1.7A (Ta) | 2.5V, 4.5V | 700mV @ 250µA (Min) | 2.93 nC @ 4.5 V | 258 pF @ 15 V | ±12V | - | 625mW (Ta) | 150mOhm @ 1.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 166W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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MOSFET (Metal Oxide) | 100 V | 15A (Ta), 100A (Tc) | 6V, 10V | 4V @ 250µA | 56.4 nC @ 10 V | 4468 pF @ 50 V | ±20V | - | 3W (Ta), 166W (Tc) | 8.8mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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MOSFET (Metal Oxide) | 40 V | 14.4A (Ta), 64.8A (Tc) | 5V, 10V | 3V @ 250µA | 15.3 nC @ 10 V | 1088 pF @ 20 V | ±20V | - | 2.99W (Ta), 55.5W (Tc) | 8.8mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI3333-8
- Package / Case: 8-PowerVDFN
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MOSFET (Metal Oxide) | 60 V | 17A (Ta), 98A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 47.5 nC @ 10 V | 3223 pF @ 30 V | ±20V | - | 2.38W (Ta), 75W (Tc) | 4.1mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V X4-DSN1006
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V
- Vgs (Max): 12V
- FET Feature: -
- Power Dissipation (Max): 1.12W
- Rds On (Max) @ Id, Vgs: 58mOhm @ 500mA, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X4-DSN1006-3 (Type C)
- Package / Case: 3-XFDFN
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MOSFET (Metal Oxide) | 30 V | 4.6A (Ta) | 1.8V, 8V | 1.1V @ 250µA | 1.4 nC @ 4.5 V | 126 pF @ 15 V | 12V | - | 1.12W | 58mOhm @ 500mA, 8V | -55°C ~ 150°C (TJ) | Surface Mount | X4-DSN1006-3 (Type C) | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 60A POWERDI3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 42 nC @ 10 V | 2000 pF @ 15 V | ±20V | - | 1W (Ta) | 5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |