|
|
Vishay Semiconductor Diodes Division |
DIODE SW 1A 800V 500NS DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-204AL, DO-41, Axial |
Stock3,568 |
|
800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 16A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 730mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: TO-220-2 |
Stock7,776 |
|
60V | 16A | 730mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 35V 8A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 125°C
|
Package: DO-201AA, DO-27, Axial |
Stock4,480 |
|
35V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 35V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 8A D2PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 550µA @ 80V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock15,888 |
|
80V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550µA @ 80V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE MODULE 1.2KV 650A D200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 650A
- Voltage - Forward (Vf) (Max) @ If: 2.08V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, PUK
- Operating Temperature - Junction: -
|
Package: DO-200AA, A-PUK |
Stock3,712 |
|
1200V | 650A | 2.08V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 1200V | - | Chassis Mount | DO-200AA, A-PUK | DO-200AA, PUK | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 1200V 150A DO-8
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.47V @ 600A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 180°C
|
Package: DO-205AA, DO-8, Stud |
Stock7,936 |
|
1200V | 150A | 1.47V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 180°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE MODULE 400V 70A D-55
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 100µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-55 T-Module
- Supplier Device Package: D-55
- Operating Temperature - Junction: -
|
Package: D-55 T-Module |
Stock6,272 |
|
400V | 70A | - | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 400V | - | Chassis Mount | D-55 T-Module | D-55 | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 85A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -40°C ~ 125°C
|
Package: DO-203AB, DO-5, Stud |
Stock6,160 |
|
100V | 85A | - | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
TSC America Inc. |
DIODE, SUPER FAST, 16A, 400V, 35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-220-3 |
Stock5,168 |
|
400V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
Diodes Incorporated |
DIODE SCHOTTKY 50V 5A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 670mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: DO-201AD, Axial |
Stock3,280 |
|
50V | 5A | 670mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
Sanken |
DIODE GEN PURP 600V 1.5A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 400ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: Axial |
Stock2,800 |
|
600V | 1.5A | 1.5V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-204AL, DO-41, Axial |
Stock2,416 |
|
200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
TSC America Inc. |
DIODE, 2A, 200V, AEC-Q101, DO-15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-204AC, DO-15, Axial |
Stock3,504 |
|
200V | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Solid State Inc. |
DIODE GEN PURP 250V 275A DO9
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250 V
- Current - Average Rectified (Io): 275A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 75 µA @ 250 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-9
- Operating Temperature - Junction: -65°C ~ 190°C
|
Package: - |
Request a Quote |
|
250 V | 275A | 1.3 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 75 µA @ 250 V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-9 | -65°C ~ 190°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 16A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
|
40 V | 16A | 550 mV @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 125°C |
|
|
SMC Diode Solutions |
600V, 15A, ITO-220AC-2L, ULTRA F
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Stock2,400 |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
SMC Diode Solutions |
DIODE GEN PURP 100V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
100 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2.5 µs | 5 µA @ 100 V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -65°C ~ 175°C |
|
|
Luminus Devices Inc. |
DIODE 1200V-20A TO220-2L, AUTOMO
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 1.2 kV
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
1200 V | 20A | 1.35 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1.2 kV | - | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
10A, 150V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 150 V
- Capacitance @ Vr, F: 165pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: ThinDPAK
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock13,494 |
|
150 V | 10A | 880 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 150 V | 165pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | ThinDPAK | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
500NS, 1A, 800V, FAST RECOVERY R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 800 V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: Thin SMA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock84,000 |
|
800 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 1 µA @ 800 V | 7pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | Thin SMA | -55°C ~ 150°C |
|
|
Microchip Technology |
DIODE GEN PURP 100V 8A D-5B
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, E
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
100 V | 8A | 925 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | Surface Mount | SQ-MELF, E | D-5B | - |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Nexperia USA Inc. |
DIODE SCHOTTKY 40V 3A SOD123W
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: 250pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: 150°C
|
Package: - |
Stock17,769 |
|
40 V | 3A | 540 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 250pF @ 1V, 1MHz | Surface Mount | SOD-123W | SOD-123W | 150°C |
|
|
Nexperia USA Inc. |
DIODE SCHOTTKY 60V 2A SOD123W
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 60 V
- Capacitance @ Vr, F: 240pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: 150°C
|
Package: - |
Stock36,555 |
|
60 V | 2A | 530 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 60 V | 240pF @ 1V, 1MHz | Surface Mount | SOD-123W | SOD-123W | 150°C |
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 40V 200MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 20 V
- Capacitance @ Vr, F: 10pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Stock84,681 |
|
40 V | 200mA | 500 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 50 µA @ 20 V | 10pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -65°C ~ 150°C |
|
|
onsemi |
DIODE SCHOTTKY 30V 500MA SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 130 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -65°C ~ 125°C
|
Package: - |
Request a Quote |
|
30 V | 500mA | 430 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 130 µA @ 30 V | - | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 2A SOD123W
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock60,000 |
|
200 V | 2A | 950 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 150°C |
|
|
Micro Commercial Co |
DIODE GEN PURP 600V 15A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 95 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
600 V | 15A | 1.6 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 95 ns | 5 µA @ 600 V | 100pF @ 4V, 1MHz | Through Hole | TO-220-2 Isolated Tab | ITO-220AC | -55°C ~ 150°C |