|
|
Central Semiconductor Corp |
DIODE GEN PURP 100V 150MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 730mV @ 5mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 25nA @ 20V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: DO-204AH, DO-35, Axial |
Stock4,032 |
|
100V | 150mA | 730mV @ 5mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 22pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: DO-204AL, DO-41, Axial |
Stock7,392 |
|
150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 50A B47
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 7mA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: B-47
- Supplier Device Package: B-47
- Operating Temperature - Junction: -65°C ~ 195°C
|
Package: B-47 |
Stock3,680 |
|
100V | 50A | - | Standard Recovery >500ns, > 200mA (Io) | - | 7mA @ 100V | - | Chassis, Stud Mount | B-47 | B-47 | -65°C ~ 195°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 760mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 6mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: TO-220-2 |
Stock8,628 |
|
45V | 10A | 760mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
Infineon Technologies Industrial Power and Controls Americas |
RECTIFIER DIODE 2000V 360A
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Stock7,248 |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
TSC America Inc. |
DIODE, SUPER FAST, 8A, 50V, 35NS
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,280 |
|
50V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 80pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
|
Sanken |
DIODE SCHOTTKY SMD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 360mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4.5mA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, J-Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -40°C ~ 125°C
|
Package: 2-SMD, J-Lead |
Stock108,000 |
|
30V | 3A | 360mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5mA @ 30V | - | Surface Mount | 2-SMD, J-Lead | 2-SMD | -40°C ~ 125°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 40V 200MA SOD923
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: 7pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-923
- Supplier Device Package: SOD-923
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: SOD-923 |
Stock6,800 |
|
40V | 200mA (DC) | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 7pF @ 1V, 1MHz | Surface Mount | SOD-923 | SOD-923 | -55°C ~ 150°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 70V 70MA SOT23-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 70V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock32,664 |
|
70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 70V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AC, SMA |
Stock3,792 |
|
200V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, FAST, 1A, 600V, 250NS, DO
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-204AL, DO-41, Axial |
Stock4,064 |
|
600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 15A TO263-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock230,112 |
|
600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 175°C |
|
|
Diodes Incorporated |
DIODE SBR 60V 20A POWERDI5
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 180µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: PowerDI? 5
- Supplier Device Package: PowerDI? 5
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: PowerDI? 5 |
Stock5,760 |
|
60V | 20A | 570mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 180µA @ 60V | - | Surface Mount | PowerDI? 5 | PowerDI? 5 | -55°C ~ 150°C |
|
|
Nexperia USA Inc. |
DIODE SCHOTTKY 25V 1A 6TSOP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 25V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 25V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
- Operating Temperature - Junction: 125°C (Max)
|
Package: SC-74, SOT-457 |
Stock28,854 |
|
25V | 1A (DC) | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 25V | 100pF @ 4V, 1MHz | Surface Mount | SC-74, SOT-457 | 6-TSOP | 125°C (Max) |
|
|
ON Semiconductor |
DIODE SCHOTTKY 20V 1A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AC, SMA |
Stock1,118,796 |
|
20V | 1A | 530mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 20V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C |
|
|
Microchip Technology |
RECTIFIER DIODE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3000 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 100 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 3000 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: S, Axial
- Supplier Device Package: S, Axial
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
3000 V | 250mA | 3.5 V @ 100 mA | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 3000 V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
|
|
Diodes Incorporated |
DIODE SCHOTT 30V 4A X3-TSN1608-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 570 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 30 V
- Capacitance @ Vr, F: 107pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0603 (1608 Metric)
- Supplier Device Package: X3-TSN1608-2
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
30 V | 4A | 570 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 30 V | 107pF @ 4V, 1MHz | Surface Mount | 0603 (1608 Metric) | X3-TSN1608-2 | -55°C ~ 150°C |
|
|
Vishay |
8A, 100V, SMPA TRENCH SKY RECT.
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2.8A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 140 µA @ 100 V
- Capacitance @ Vr, F: 770pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
- Supplier Device Package: DO-221BC (SMPA)
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Request a Quote |
|
100 V | 2.8A | 800 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 140 µA @ 100 V | 770pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 175°C |
|
|
Bourns Inc. |
DIODE SCHOTTKY 100V 3A 2SMD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 100 V
- Capacitance @ Vr, F: 180pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
100 V | 3A | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | 180pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -55°C ~ 150°C |
|
|
NTE Electronics, Inc |
DIODE GEN PURP 400V 10A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
|
400 V | 10A | 1 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | 150pF @ 4V, 1MHz | Through Hole | Axial | Axial | -55°C ~ 125°C |
|
|
Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: - |
Request a Quote |
|
400 V | 5A | 1.3 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | 100pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -50°C ~ 150°C |
|
|
Diodes Incorporated |
DIODE GEN PURP 50V 1A MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: MELF
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
50 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 50 V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | MELF | -65°C ~ 150°C |
|
|
Diotec Semiconductor |
SCHOTTKY TO-220AC 45V 18A 150C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 18A
- Voltage - Forward (Vf) (Max) @ If: 535 mV @ 18 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: - |
Request a Quote |
|
45 V | 18A | 535 mV @ 18 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | - | Through Hole | TO-220-2 | TO-220AC | -50°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A US-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 60 µA @ 40 V
- Capacitance @ Vr, F: 35pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: US-FLAT (1.25x2.5)
- Operating Temperature - Junction: 150°C (Max)
|
Package: - |
Request a Quote |
|
40 V | 1A | 490 mV @ 700 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 40 V | 35pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | 150°C (Max) |
|
|
Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 65 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
1000 V | 10A | 2.4 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 10 µA @ 1000 V | - | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 175°C |
|
|
Diodes Incorporated |
STANDARD RECOVERY RECTIFIER SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1 kV
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
1000 V | 2A | 1.15 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1 kV | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C |
|
|
Diodes Incorporated |
DIODE SCHOTTKY 40V 350MA SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 350mA
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 30 V
- Capacitance @ Vr, F: 28pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
40 V | 350mA | 600 mV @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 10 ns | 5 µA @ 30 V | 28pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 17pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
200 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |