Page 1011 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4937GPHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock6,912
MA2J1160GL
Panasonic Electronic Components

DIODE GEN PURP 40V 100MA SMINI2

Package: SC-90, SOD-323F

Stock7,456
VS-15MQ040NPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1.5A SMA

Package: DO-214AC, SMA

Stock636,000
GF1B/17A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214BA

Package: DO-214BA

Stock7,696
R6030222PSYA
Powerex Inc.

DIODE GEN PURP 200V 220A DO205AB

Package: DO-205AB, DO-9, Stud

Stock6,320
SF4006-TAP
Vishay Semiconductor Diodes Division

DIODE AVAL 1A 800V SOD-57

Package: SOD-57, Axial

Stock2,016
RSFALHRVG
TSC America Inc.

DIODE, FAST, 0.5A, 50V, 150NS, A

Package: DO-219AB

Stock7,904
SR105 R0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 5

Package: DO-204AL, DO-41, Axial

Stock4,656
STBR3012WY
STMicroelectronics

DIODE GEN PURP 1.2KV 30A DO247

Package: DO-247-2 (Straight Leads)

Stock18,540
CDBB160-HF
Comchip Technology

DIODE SCHOTTKY 60V 1A DO214AA

Package: DO-214AA, SMB

Stock7,696
1N4148 TR
Central Semiconductor Corp

DIODE GEN PURP 75V 150MA DO35

Package: DO-204AH, DO-35, Axial

Stock227,712
CMMR1-10 TR
Central Semiconductor Corp

DIODE GEN PURP 1000V 1A SOD123F

Package: SOD-123F

Stock232,680
S10D-TP
Micro Commercial Co

DIODE GEN PURP 200V 10A DO214AB

Package: DO-214AB, SMC

Stock300,000
STPS30120DJF-TR
STMicroelectronics

DIODE SCHOTTKY 120V 30A POWRFLAT

Package: 8-PowerVDFN

Stock22,968
B280-13-F
Diodes Incorporated

DIODE SCHOTTKY 80V 2A SMB

Package: DO-214AA, SMB

Stock511,356
1N2246
Microchip Technology

DIODE GEN PURP 50V 22A DO4

Package: -

Request a Quote
VS-30EPH06L-N3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AD

Package: -

Stock4,509
RBR5L30BDDTE25
Rohm Semiconductor

DIODE SCHOTTKY 30V 5A PMDS

Package: -

Stock34,266
SD103AW-ML
MOSLEADER

40V 350mA SOD-123

Package: -

Request a Quote
MSASC25W45KV-TR
Microchip Technology

DIODE POWER SCHOTTKY

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4937GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock6,912	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
MA2J1160GL	Panasonic Electronic Components	DIODE GEN PURP 40V 100MA SMINI2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 10nA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SMini2-F3 Operating Temperature - Junction: 150°C (Max)	Package: SC-90, SOD-323F	Stock7,456	40V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	100ns	10nA @ 40V	-	Surface Mount	SC-90, SOD-323F	SMini2-F3	150°C (Max)
VS-15MQ040NPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1.5A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 134pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -40°C ~ 150°C	Package: DO-214AC, SMA	Stock636,000	40V	1.5A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	134pF @ 10V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-40°C ~ 150°C
GF1B/17A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214BA	Stock7,696	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 100V	-	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
R6030222PSYA	Powerex Inc.	DIODE GEN PURP 200V 220A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 220A Voltage - Forward (Vf) (Max) @ If: 2.75V @ 800A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 50mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -45°C ~ 150°C	Package: DO-205AB, DO-9, Stud	Stock6,320	200V	220A	2.75V @ 800A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	50mA @ 200V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-45°C ~ 150°C
SF4006-TAP	Vishay Semiconductor Diodes Division	DIODE AVAL 1A 800V SOD-57 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-57, Axial	Stock2,016	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
RSFALHRVG	TSC America Inc.	DIODE, FAST, 0.5A, 50V, 150NS, A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock7,904	50V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SR105 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock4,656	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
STBR3012WY	STMicroelectronics	DIODE GEN PURP 1.2KV 30A DO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C	Package: DO-247-2 (Straight Leads)	Stock18,540	1200V	30A	1.3V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	2µA @ 1200V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
CDBB160-HF	Comchip Technology	DIODE SCHOTTKY 60V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C	Package: DO-214AA, SMB	Stock7,696	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	120pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 150°C
1N4148 TR	Central Semiconductor Corp	DIODE GEN PURP 75V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-204AH, DO-35, Axial	Stock227,712	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
CMMR1-10 TR	Central Semiconductor Corp	DIODE GEN PURP 1000V 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 150°C	Package: SOD-123F	Stock232,680	1000V	1A	1.1V @ 1A	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 1000V	6pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C
S10D-TP	Micro Commercial Co	DIODE GEN PURP 200V 10A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 190pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock300,000	200V	10A	1.2V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	190pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
STPS30120DJF-TR	STMicroelectronics	DIODE SCHOTTKY 120V 30A POWRFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 920mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6) Operating Temperature - Junction: 150°C (Max)	Package: 8-PowerVDFN	Stock22,968	120V	30A	920mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	35µA @ 120V	-	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)	150°C (Max)
B280-13-F	Diodes Incorporated	DIODE SCHOTTKY 80V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7mA @ 80V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock511,356	80V	2A	790mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	7mA @ 80V	75pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
1N2246	Microchip Technology	DIODE GEN PURP 50V 22A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 22A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	50 V	22A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
VS-30EPH06L-N3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 30A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Stock4,509	600 V	30A	2.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	-	Through Hole	TO-247-2	TO-247AD	-65°C ~ 175°C
RBR5L30BDDTE25	Rohm Semiconductor	DIODE SCHOTTKY 30V 5A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	Package: -	Stock34,266	30 V	5A	490 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 30 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
SD103AW-ML	MOSLEADER	40V 350mA SOD-123 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MSASC25W45KV-TR	Microchip Technology	DIODE POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
S4DH	Taiwan Semiconductor Corporation	4A, 200V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock9,000	200 V	4A	1.15 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 200 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK54	SMC Diode Solutions	DIODE SCHOTTKY 40V SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock51,123	40 V	-	650 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	150pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
V2NM153HM3-H	Vishay General Semiconductor - Diodes Division	2A, 150V, DFN3820A TRENCH SKY RE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1.7A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 150 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	150 V	1.7A	970 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 150 V	110pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 175°C
R4240TS	Microchip Technology	DIODE GP REV 400V 125A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	400 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 400 V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
SD125SC150B-T1	SMC Diode Solutions	DIODE SCHOTTKY 150V 15A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 150 V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 200°C	Package: -	Request a Quote	150 V	15A	890 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 150 V	500pF @ 5V, 1MHz	Surface Mount	Die	Die	-55°C ~ 200°C
R3180	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
S4PG-BHM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	4A	1.1 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	10 µA @ 400 V	30pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
NRVTS10100PFST3G	onsemi	DIODE SCHOTTKY 100V 10A TO277-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 760pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock29,925	100 V	10A	780 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	760pF @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 175°C