Page 1008 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4448 BK
Central Semiconductor Corp

DIODE GEN PURP 100V 150MA DO35

Package: DO-204AH, DO-35, Axial

Stock3,552
SF20AG-T
Diodes Incorporated

DIODE GEN PURP 50V 2A DO15

Package: DO-204AC, DO-15, Axial

Stock7,440
A197RM
Powerex Inc.

DIODE GEN REV 600V 250A DO205AB

Package: DO-205AB, DO-9, Stud

Stock5,664
1N6081US
Microsemi Corporation

DIODE GEN PURP 150V 2A G-MELF

Package: SQ-MELF, G

Stock3,280
VI30120SG-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 120V TO-262AA

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,784
VS-6EWX06FNTRR-M3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 600V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,344
NRVTS12100EMFST1G
ON Semiconductor

DIODE SCHOTTKY 100V 12A 5DFN

Package: 8-PowerTDFN, 5 Leads

Stock7,072
6A100GHR0G
TSC America Inc.

DIODE, 6A, 1000V, AEC-Q101, R-6

Package: R6, Axial

Stock5,264
1N5820HB0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

Package: DO-201AD, Axial

Stock7,312
SR315 R0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

Package: DO-201AD, Axial

Stock2,912
RS07J-M-08
Vishay Semiconductor Diodes Division

DIODE SW 600V DO219-M

Package: DO-219AB

Stock304,632
RSFKLHMTG
TSC America Inc.

DIODE, FAST, 0.5A, 800V, 500NS,

Package: DO-219AB

Stock7,568
S1B-M3/5AT
Vishay Semiconductor Diodes Division

DIODE GPP 1A 100V DO-214AC

Package: DO-214AC, SMA

Stock7,840
BAV21WS-HE3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 250MA SOD323

Package: SC-76, SOD-323

Stock2,416
IDP08E65D1XKSA1
Infineon Technologies

DIODE GEN PURP 650V 8A TO220-2

Package: TO-220-2

Stock19,332
SSBRD81045T4G
ON Semiconductor

DIODE SCHOTTKY 45V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock19,452
BAS70LP-7B
Diodes Incorporated

DIODE SCHOTTKY 70V 70MA 2DFN

Package: 2-UFDFN

Stock23,292,792
CDBQR70
Comchip Technology

DIODE SCHOTTKY 70V 70MA 0402

Package: 0402 (1005 Metric)

Stock314,358
BAS100CS_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 100V 500MA SOD323

Package: -

Stock133,833
RKR0505AKH-P1
Renesas Electronics Corporation

RECTIFIER DIODE, SCHOTTKY

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4448 BK	Central Semiconductor Corp	DIODE GEN PURP 100V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-204AH, DO-35, Axial	Stock3,552	100V	150mA	720mV @ 5mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
SF20AG-T	Diodes Incorporated	DIODE GEN PURP 50V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock7,440	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	75pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
A197RM	Powerex Inc.	DIODE GEN REV 600V 250A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: DO-205AB, DO-9, Stud	Stock5,664	600V	250A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	-	-40°C ~ 150°C
1N6081US	Microsemi Corporation	DIODE GEN PURP 150V 2A G-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, G Supplier Device Package: G-MELF (D-5C) Operating Temperature - Junction: -65°C ~ 155°C	Package: SQ-MELF, G	Stock3,280	150V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 150V	-	Surface Mount	SQ-MELF, G	G-MELF (D-5C)	-65°C ~ 155°C
VI30120SG-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30A 120V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,784	120V	30A	1.28V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-40°C ~ 150°C
VS-6EWX06FNTRR-M3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 600V 6A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 3.1V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,344	600V	6A	3.1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	21ns	20µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
NRVTS12100EMFST1G	ON Semiconductor	DIODE SCHOTTKY 100V 12A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 730mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 55µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C	Package: 8-PowerTDFN, 5 Leads	Stock7,072	100V	12A	730mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	55µA @ 100V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
6A100GHR0G	TSC America Inc.	DIODE, 6A, 1000V, AEC-Q101, R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	Package: R6, Axial	Stock5,264	-	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
1N5820HB0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-201AD, Axial	Stock7,312	20V	3A	475mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR315 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock2,912	150V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RS07J-M-08	Vishay Semiconductor Diodes Division	DIODE SW 600V DO219-M Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock304,632	600V	500mA	1.15V @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
RSFKLHMTG	TSC America Inc.	DIODE, FAST, 0.5A, 800V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock7,568	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1B-M3/5AT	Vishay Semiconductor Diodes Division	DIODE GPP 1A 100V DO-214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock7,840	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BAV21WS-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 250MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max)	Package: SC-76, SOD-323	Stock2,416	200V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	1.5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
IDP08E65D1XKSA1	Infineon Technologies	DIODE GEN PURP 650V 8A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-220-2	Stock19,332	650V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	40µA @ 650V	-	Through Hole	TO-220-2	TO-220-2	-40°C ~ 175°C
SSBRD81045T4G	ON Semiconductor	DIODE SCHOTTKY 45V 10A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3 Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock19,452	45V	10A	840mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3	-65°C ~ 175°C
BAS70LP-7B	Diodes Incorporated	DIODE SCHOTTKY 70V 70MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 960mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6ns Current - Reverse Leakage @ Vr: 10µA @ 70V Capacitance @ Vr, F: 1pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-UFDFN Supplier Device Package: 2-DFN1006 Operating Temperature - Junction: -65°C ~ 150°C	Package: 2-UFDFN	Stock23,292,792	70V	70mA (DC)	960mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	1.6ns	10µA @ 70V	1pF @ 0V, 1MHz	Surface Mount	2-UFDFN	2-DFN1006	-65°C ~ 150°C
CDBQR70	Comchip Technology	DIODE SCHOTTKY 70V 70MA 0402 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402/SOD-923F Operating Temperature - Junction: 125°C (Max)	Package: 0402 (1005 Metric)	Stock314,358	70V	70mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	0402 (1005 Metric)	0402/SOD-923F	125°C (Max)
BAS100CS_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 100V 500MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 850 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 21pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock133,833	100 V	500mA	850 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 100 V	21pF @ 4V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323	-55°C ~ 150°C
RKR0505AKH-P1	Renesas Electronics Corporation	RECTIFIER DIODE, SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BY255	Diotec Semiconductor	DIODE GEN PURP 1.3KV 3A DO201 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Stock6,924	1300 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1300 V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201	-50°C ~ 150°C
US5JC-HF	Comchip Technology	DIODE GEN PURP 600V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	5A	1.65 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
1N6073-TR	Microchip Technology	DIODE GEN PURP 50V 850MA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 850mA Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 155°C	Package: -	Request a Quote	50 V	850mA	2.04 V @ 9.4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 50 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 155°C
TST20L100CW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock2,652	100 V	10A	840 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SK42L-TP	Micro Commercial Co	DIODE SCHOTTKY 20V 4A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock9,000	20 V	4A	450 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 125°C
LL4007G-L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
UES702R	Microchip Technology	DIODE GEN PURP 100V 25A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 20 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	100 V	25A	950 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 100 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-55°C ~ 175°C
JANTXV1N4454-1-TR	Microchip Technology	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 µA @ 50 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C