Page 1054 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SIDC14D60C6
Infineon Technologies

DIODE GEN PURP 600V 50A WAFER

Package: Die

Stock2,096
CLS02(T6L,CLAR,Q)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 10A L-FLAT

Package: L-FLAT?

Stock2,208
RGP10MHM3/54
Vishay Semiconductor Diodes Division

DIODE SW 1A 1000V 500NS DO204AL

Package: DO-204AL, DO-41, Axial

Stock5,168
1N5627GP-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

Package: DO-201AD, Axial

Stock7,872
STTA812DIRG
STMicroelectronics

DIODE GEN PURP 1.2KV 8A TO220AC

Package: TO-220-2 Insulated, TO-220AC

Stock7,280
MBR340
ON Semiconductor

DIODE SCHOTTKY 40V 3A DO201AD

Package: DO-201AA, DO-27, Axial

Stock8,484
D1331SH45T
Infineon Technologies Industrial Power and Controls Americas

DIODE FAST 4500V 1310A

Package: -

Stock2,512
SCH15000
Semtech Corporation

DIODE GEN PURP 5KV 500MA AXIAL

Package: Axial

Stock2,400
R7003403XXUA
Powerex Inc.

DIODE GEN PURP 4400V 300A DO200

Package: DO-200AA, A-PUK

Stock5,408
VS-1N3768R
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 35A DO203AB

Package: DO-203AB, DO-5, Stud

Stock5,008
HSM835G/TR13
Microsemi Corporation

DIODE SCHOTTKY 35V 8A DO215AB

Package: DO-215AB, SMC Gull Wing

Stock3,504
UGF8JDHC0G
TSC America Inc.

DIODE, ULTRA FAST, 8A, 600V, 30N

Package: TO-220-2 Full Pack

Stock3,440
SS35HE3_A/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO214AB

Package: DO-214AB, SMC

Stock3,632
AM01AV1
Sanken

DIODE GEN PURP 600V 1A AXIAL

Package: Axial

Stock3,536
SDURK30P60
SMC Diode Solutions

600V, 30A, ITO-220AC-2L, ULTRA F

Package: -

Stock21,000
MMDL914T1
onsemi

DIODE SWITCH FAST 100V SOD323

Package: -

Request a Quote
DFD05TE-BT
onsemi

DFD05 - RECTIFIER DIODE, 0.5A, 8

Package: -

Request a Quote
S2M_HF
Diodes Incorporated

DIODE GEN PURP 1KV 1.5A SMB

Package: -

Request a Quote
ES5G-T
Taiwan Semiconductor Corporation

35NS, 5A, 400V, SUPER FAST RECOV

Package: -

Stock9,000
BAT54-DG-215
NXP

RECTIFIER DIODE, SCHOTTKY

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC14D60C6	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	Package: Die	Stock2,096	600V	50A (DC)	1.9V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
CLS02(T6L,CLAR,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 420pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	Package: L-FLAT?	Stock2,208	40V	10A (DC)	0.55V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	420pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
RGP10MHM3/54	Vishay Semiconductor Diodes Division	DIODE SW 1A 1000V 500NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock5,168	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N5627GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 200µA @ 800V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AD, Axial	Stock7,872	800V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	3µs	200µA @ 800V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
STTA812DIRG	STMicroelectronics	DIODE GEN PURP 1.2KV 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Supplier Device Package: TO-220AC ins Operating Temperature - Junction: 150°C (Max)	Package: TO-220-2 Insulated, TO-220AC	Stock7,280	1200V	8A	2.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	100µA @ 1200V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	150°C (Max)
MBR340	ON Semiconductor	DIODE SCHOTTKY 40V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AA, DO-27, Axial	Stock8,484	40V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 40V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
D1331SH45T	Infineon Technologies Industrial Power and Controls Americas	DIODE FAST 4500V 1310A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock2,512	-	-	-	-	-	-	-	-	-	-	-
SCH15000	Semtech Corporation	DIODE GEN PURP 5KV 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5000V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 1µA @ 5000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	Package: Axial	Stock2,400	5000V	500mA	5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	5µs	1µA @ 5000V	-	Through Hole	Axial	-	-55°C ~ 150°C
R7003403XXUA	Powerex Inc.	DIODE GEN PURP 4400V 300A DO200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4400V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9µs Current - Reverse Leakage @ Vr: 50mA @ 4400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-200AA, A-PUK	Stock5,408	4400V	300A	2.15V @ 1500A	Fast Recovery =< 500ns, > 200mA (Io)	9µs	50mA @ 4400V	-	Chassis, Stud Mount	DO-200AA, A-PUK	DO-200AA, R62	-65°C ~ 200°C
VS-1N3768R	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-203AB, DO-5, Stud	Stock5,008	1000V	35A	1.8V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	2mA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 190°C
HSM835G/TR13	Microsemi Corporation	DIODE SCHOTTKY 35V 8A DO215AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 620mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-215AB, SMC Gull Wing	Stock3,504	35V	8A	620mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 35V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 175°C
UGF8JDHC0G	TSC America Inc.	DIODE, ULTRA FAST, 8A, 600V, 30N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2 Full Pack	Stock3,440	600V	8A	2.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SS35HE3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock3,632	50V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
AM01AV1	Sanken	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock3,536	600V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
SDURK30P60	SMC Diode Solutions	600V, 30A, ITO-220AC-2L, ULTRA F Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock21,000	-	-	-	-	-	-	-	-	-	-	-
MMDL914T1	onsemi	DIODE SWITCH FAST 100V SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -	Package: -	Request a Quote	100 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	5 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-
DFD05TE-BT	onsemi	DFD05 - RECTIFIER DIODE, 0.5A, 8 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
S2M_HF	Diodes Incorporated	DIODE GEN PURP 1KV 1.5A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1000 V	1.5A	1.15 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1000 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
ES5G-T	Taiwan Semiconductor Corporation	35NS, 5A, 400V, SUPER FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 123pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock9,000	400 V	5A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	123pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
BAT54-DG-215	NXP	RECTIFIER DIODE, SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RFUH25TB3SNZC9	Rohm Semiconductor	DIODE GP 350V 20A TO220FN-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 350 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 350 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FN-2 Operating Temperature - Junction: 150°C	Package: -	Stock2,382	350 V	20A	1.45 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 350 V	-	Through Hole	TO-220-2 Full Pack	TO-220FN-2	150°C
UES706E3	Microchip Technology	DIODE GEN PURP 400V 20A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 50 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	20A	1.25 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 400 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-55°C ~ 150°C
1N485B-TR-1	Microchip Technology	DIODE GEN PURP 180V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 180 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 nA @ 180 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	180 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 180 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 200°C
SD125SC200B-T1	SMC Diode Solutions	DIODE SCHOTTKY 200V 15A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 350 µA @ 200 V Capacitance @ Vr, F: 300pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 200°C	Package: -	Request a Quote	200 V	15A	920 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 200 V	300pF @ 5V, 1MHz	Surface Mount	Die	Die	-55°C ~ 200°C
NTE592	NTE Electronics, Inc	DIODE GEN PURP 200V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	200 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C
VS-S1662	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CMR1U-02-BK-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 200V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
1N412RB	Solid State Inc.	DIODE GEN PURP REV 100V 100A DO8 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	100 V	100A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 100 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C