Page 1100 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SIDC04D60F6
Infineon Technologies

DIODE GEN PURP 600V 9A WAFER

Package: Die

Stock2,560
CS241210
Powerex Inc.

DIODE MODULE 1.2KV 100A POWRBLOK

Package: POW-R-BLOK? Module

Stock4,896
S5BC-13
Diodes Incorporated

DIODE GEN PURP 100V 5A SMC

Package: DO-214AB, SMC

Stock7,744
UFS305J/TR13
Microsemi Corporation

DIODE GEN PURP 50V 3A DO214AB

Package: DO-214AB, SMC

Stock3,200
SF35G B0G
TSC America Inc.

DIODE, SUPER FAST, 3A, 300V, 35N

Package: DO-201AD, Axial

Stock7,984
SS19-E3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1A DO214AC

Package: DO-214AC, SMA

Stock6,480
B150BQ-13-F
Diodes Incorporated

DIODE SCHOTTKY 50V 1A SMB

Package: DO-214AA, SMB

Stock6,912
SB250-E3/54
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 2A 50V DO-41

Package: DO-204AL, DO-41, Axial

Stock3,472
BYM11-50-E3/97
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

Package: DO-213AB, MELF (Glass)

Stock4,544
3A100HA0G
TSC America Inc.

DIODE, 3A, 1000V, AEC-Q101, DO-1

Package: DO-204AC, DO-15, Axial

Stock3,632
ES1FL RTG
TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

Package: DO-219AB

Stock3,456
SR206HA0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 6

Package: DO-204AC, DO-15, Axial

Stock3,216
ES1D M2G
TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

Package: DO-214AC, SMA

Stock6,304
S1JB-13-F
Diodes Incorporated

DIODE GEN PURP 600V 1A SMB

Package: DO-214AA, SMB

Stock504,000
BAV21WHE3-TP
Micro Commercial Co

DIODE GEN PURP 200V 200MA SOD123

Package: -

Stock8,988
10DQ04
SMC Diode Solutions

DIODE SCHOTTKY 40V 1A DO41

Package: -

Stock13,929
JAN1N5811-TR
Microchip Technology

DIODE GEN PURP 150V 6A

Package: -

Request a Quote
MB1H60AL-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 60V 1A SOD123FL

Package: -

Stock9,000
JANTX1N3913AR
Microchip Technology

DIODE GEN PURP 400V 50A DO5

Package: -

Request a Quote
85HFR120
Solid State Inc.

DIODE GEN PURP 1.2KV 85A DO5

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC04D60F6	Infineon Technologies	DIODE GEN PURP 600V 9A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 9A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	Package: Die	Stock2,560	600V	9A (DC)	1.6V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
CS241210	Powerex Inc.	DIODE MODULE 1.2KV 100A POWRBLOK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 800ns Current - Reverse Leakage @ Vr: 20mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: POW-R-BLOK? Module Supplier Device Package: POW-R-BLOK? Module Operating Temperature - Junction: -	Package: POW-R-BLOK? Module	Stock4,896	1200V	100A (DC)	1.5V @ 100A	Standard Recovery >500ns, > 200mA (Io)	800ns	20mA @ 1200V	-	Chassis Mount	POW-R-BLOK? Module	POW-R-BLOK? Module	-
S5BC-13	Diodes Incorporated	DIODE GEN PURP 100V 5A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AB, SMC	Stock7,744	100V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
UFS305J/TR13	Microsemi Corporation	DIODE GEN PURP 50V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AB, SMC	Stock3,200	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
SF35G B0G	TSC America Inc.	DIODE, SUPER FAST, 3A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock7,984	300V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS19-E3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -	Package: DO-214AC, SMA	Stock6,480	90V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-
B150BQ-13-F	Diodes Incorporated	DIODE SCHOTTKY 50V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock6,912	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	110pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
SB250-E3/54	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 2A 50V DO-41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 680mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock3,472	50V	2A	680mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
BYM11-50-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AB, MELF (Glass)	Stock4,544	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
3A100HA0G	TSC America Inc.	DIODE, 3A, 1000V, AEC-Q101, DO-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 27pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock3,632	-	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	27pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
ES1FL RTG	TSC America Inc.	DIODE, SUPER FAST, 1A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock3,456	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SR206HA0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock3,216	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
ES1D M2G	TSC America Inc.	DIODE, SUPER FAST, 1A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 16pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock6,304	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S1JB-13-F	Diodes Incorporated	DIODE GEN PURP 600V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock504,000	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
BAV21WHE3-TP	Micro Commercial Co	DIODE GEN PURP 200V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,988	200 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
10DQ04	SMC Diode Solutions	DIODE SCHOTTKY 40V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Stock13,929	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
JAN1N5811-TR	Microchip Technology	DIODE GEN PURP 150V 6A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	150 V	6A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 150 V	60pF @ 10V, 1MHz	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
MB1H60AL-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 60V 1A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3 µA @ 60 V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock9,000	60 V	1A	750 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 µA @ 60 V	55pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 175°C
JANTX1N3913AR	Microchip Technology	DIODE GEN PURP 400V 50A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	400 V	50A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 150°C
85HFR120	Solid State Inc.	DIODE GEN PURP 1.2KV 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	1200 V	85A	1.3 V @ 85 A	Standard Recovery >500ns, > 200mA (Io)	-	200 µA @ 1200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
1N1185RA	Solid State Inc.	DIODE GEN PURP REV 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	-	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
V3PM10-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 2.1A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 100 V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock3,408	100 V	2.1A	560 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	300pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-40°C ~ 175°C
IMBD4448-HE3_A-18	Vishay	SWITCHING DIODE GENPURP SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 70 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	75 V	350mA	1 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 70 V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C
SFA1008GH	Taiwan Semiconductor Corporation	35NS, 10A, 600V, SUPER FAST RECO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock3,000	600 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SCS310AMC	Rohm Semiconductor	DIODE SIL CARB 650V 10A TO220FM Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 500pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max)	Package: -	Stock645	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FM	175°C (Max)
V12P15HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	150 V	12A	1.08 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 150 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
SR304H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	40 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SS210LH	Taiwan Semiconductor Corporation	2A, 100V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	2A	850 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	SOD-123	Sub SMA	-55°C ~ 150°C