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Fairchild/ON Semiconductor |
DIODE GEN PURP 800V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock24,000 |
|
800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 60A TO247-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 60A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 143ns
- Current - Reverse Leakage @ Vr: 40µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-247-3 |
Stock5,856 |
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600V | 60A (DC) | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 143ns | 40µA @ 600V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
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Powerex Inc. |
DIODE MODULE 800V 400A DO200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 400A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 9µs
- Current - Reverse Leakage @ Vr: 50mA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, R62
- Operating Temperature - Junction: -
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Package: DO-200AA, A-PUK |
Stock2,704 |
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800V | 400A | 1.5V @ 800A | Standard Recovery >500ns, > 200mA (Io) | 9µs | 50mA @ 800V | - | Chassis Mount | DO-200AA, A-PUK | DO-200AA, R62 | - |
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Microsemi Corporation |
DIODE SCHOTTKY 35V 8A DO215AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-215AB, SMC Gull Wing
- Supplier Device Package: DO-215AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-215AB, SMC Gull Wing |
Stock5,360 |
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35V | 8A | 520mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 35V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 5A, 500V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 500V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock3,616 |
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500V | 5A | 1.7V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2.1A TO277A
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 2.1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.2µs
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: 37pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock7,760 |
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800V | 2.1A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 1.2µs | 10µA @ 800V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.7A TO277A
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.7A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 72pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock3,232 |
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200V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Sanken |
DIODE GEN PURP 1KV 1.2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock2,848 |
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1000V | 1.2A | 910mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1A DO213AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-213AB, MELF |
Stock5,376 |
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30V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 110pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 50V 500MA PCP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10ns
- Current - Reverse Leakage @ Vr: 50µA @ 25V
- Capacitance @ Vr, F: 18pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: TO-243AA |
Stock48,000 |
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50V | 500mA | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 50µA @ 25V | 18pF @ 10V, 1MHz | Surface Mount | TO-243AA | PCP | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE 0.5A 1200V 300NS DO-204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 5µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock5,856 |
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1200V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -
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Package: DO-204AL, DO-41, Axial |
Stock3,792 |
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800V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
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Comchip Technology |
DIODE GEN PURP 80V 100MA 0402
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 80V
- Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0402 (1005 Metric)
- Supplier Device Package: 0402/SOD-923F
- Operating Temperature - Junction: 125°C (Max)
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Package: 0402 (1005 Metric) |
Stock3,232 |
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80V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 80V | 3pF @ 0.5V, 1MHz | Surface Mount | 0402 (1005 Metric) | 0402/SOD-923F | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 6A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800µA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock7,792 |
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35V | 6A | 600mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 1.6KV 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2500ns
- Current - Reverse Leakage @ Vr: 5µA @ 1600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock3,040 |
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1600V | 1A | 1.25V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2500ns | 5µA @ 1600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 2.8V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220NFM
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 Full Pack |
Stock14,160 |
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600V | 20A | 2.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Microchip Technology |
DIODE DO35
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 1 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
|
- | - | 1.1 V @ 200 mA | - | - | 100 µA @ 1 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | - |
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Diodes Incorporated |
DIODE SCHOT 60V 6A TO252 T&R 2.5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (DPAK) Type TH
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
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60 V | 6A | 500 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 mA @ 60 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK) Type TH | -55°C ~ 150°C |
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NTE Electronics, Inc |
DIODE GEN PURP 500V 40A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 9 mA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 190°C
|
Package: - |
Request a Quote |
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500 V | 40A | 1.3 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 9 mA @ 500 V | - | Stud Mount | DO-203AA, DO-5, Stud | DO-5 | -65°C ~ 190°C |
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Microchip Technology |
DIODE GP 200V 300A DO205AB DO9
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 75 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB (DO-9)
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
200 V | 300A | 1.25 V @ 1000 A | Standard Recovery >500ns, > 200mA (Io) | - | 75 µA @ 200 V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB (DO-9) | -65°C ~ 200°C |
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Panjit International Inc. |
DIODE SCHOTTKY 90V 2A SMAF-C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 90 V
- Capacitance @ Vr, F: 75pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAF-C
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
90 V | 2A | 800 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 90 V | 75pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF-C | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 150V 1A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Stock27,867 |
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150 V | 1A | 900 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 150 V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 25 V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: X1-DFN1006-2
- Operating Temperature - Junction: -65°C ~ 125°C
|
Package: - |
Request a Quote |
|
30 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | Surface Mount | 0402 (1006 Metric) | X1-DFN1006-2 | -65°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURP 10MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 10mA
- Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | 10mA | 1.61 V @ 10 mA | Small Signal =< 200mA (Io), Any Speed | - | - | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | - |
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Microchip Technology |
DIODE SCHOTTKY 40V 3A DIE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -65°C ~ 125°C
|
Package: - |
Request a Quote |
|
40 V | 3A | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Surface Mount | Die | Die | -65°C ~ 125°C |
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Fairchild Semiconductor |
DIODE GEN PURP 200V 6A I-PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package: IPAK
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
200 V | 6A | 1 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 100 µA @ 200 V | - | Through Hole | TO-251-3 Short Leads, IPAK, TO-251AA | IPAK | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 1A TUMD2M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: TUMD2M
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock29,709 |
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60 V | 1A | 820 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 µA @ 60 V | - | Surface Mount | 2-SMD, Flat Lead | TUMD2M | 150°C (Max) |
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Renesas Electronics Corporation |
DIODE FOR HIGH SPEED SWITCHING
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
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