Page 1104 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

A451PM
Powerex Inc.

DIODE MODULE 1.6KV 2500A DO200AC

Package: DO-200AC, K-PUK

Stock6,128
1N5831R
GeneSiC Semiconductor

DIODE SCHOTTKY REV 35V DO4

Package: DO-203AA, DO-4, Stud

Stock7,200
1N6545
Microsemi Corporation

DIODE RECT ULT FAST REC A-PKG

Package: -

Stock3,456
1N486BUR
Microsemi Corporation

DIODE RECT STD RECOVERY

Package: -

Stock2,928
VS-8EWF02STR-M3
Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,184
SSL32HR7G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

Package: DO-214AB, SMC

Stock6,864
SDT8A100P5-13
Diodes Incorporated

SCHOTTKY RECTIFIER PDI5

Package: PowerDI? 5

Stock5,600
UG4A-M3/73
Vishay Semiconductor Diodes Division

DIODE 4A 50V 20NS DO-201AD

Package: DO-201AD, Axial

Stock4,912
SR302HR0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

Package: DO-201AD, Axial

Stock2,640
SK36AHM2G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 6

Package: DO-214AC, SMA

Stock3,888
MUR240RLG
ON Semiconductor

DIODE GEN PURP 400V 2A AXIAL

Package: DO-204AL, DO-41, Axial

Stock204,384
UPR20E3/TR7
Microsemi Corporation

DIODE GEN PURP 200V 2A POWERMITE

Package: DO-216AA

Stock7,072
DB3X207K0L
Panasonic Electronic Components

DIODE GEN PURP 20V 1A MINI3

Package: TO-236-3, SC-59, SOT-23-3

Stock2,688
VS-HFA15TB60-1-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A TO220-3

Package: -

Stock2,361
SIDC38D60C8X1SA1
Infineon Technologies

DIODE GEN PURP 600V 150A DIE

Package: -

Request a Quote
SK110-LTP-HF
Micro Commercial Co

Interface

Package: -

Request a Quote
SGLW
Taiwan Semiconductor Corporation

DIODE GP 400V 800MA SOD123W

Package: -

Request a Quote
LSIC2SD065D08A
Littelfuse Inc.

DIODE SIL CARB 650V 8A TO220AC

Package: -

Request a Quote
SK1010C
MDD

DIODE SCHOTTKY 100V 10A

Package: -

Request a Quote
TSSE3H45H
Taiwan Semiconductor Corporation

3A, 45V, TRENCH SCHOTTKY

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
A451PM	Powerex Inc.	DIODE MODULE 1.6KV 2500A DO200AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 2500A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 5000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AC, K-PUK Supplier Device Package: DO-200AC, K-PUK Operating Temperature - Junction: -	Package: DO-200AC, K-PUK	Stock6,128	1600V	2500A	1.4V @ 5000A	Standard Recovery >500ns, > 200mA (Io)	-	50mA @ 1600V	-	Chassis Mount	DO-200AC, K-PUK	DO-200AC, K-PUK	-
1N5831R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 35V DO4 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-203AA, DO-4, Stud	Stock7,200	35V	25A	580mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 20V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
1N6545	Microsemi Corporation	DIODE RECT ULT FAST REC A-PKG Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock3,456	-	-	-	-	-	-	-	-	-	-	-
1N486BUR	Microsemi Corporation	DIODE RECT STD RECOVERY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock2,928	-	-	-	-	-	-	-	-	-	-	-
VS-8EWF02STR-M3	Vishay Semiconductor Diodes Division	DIODE FAST RECOVERY 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,184	200V	8A	1.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	100µA @ 200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
SSL32HR7G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 410mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AB, SMC	Stock6,864	20V	3A	410mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
SDT8A100P5-13	Diodes Incorporated	SCHOTTKY RECTIFIER PDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -55°C ~ 150°C	Package: PowerDI? 5	Stock5,600	100V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-55°C ~ 150°C
UG4A-M3/73	Vishay Semiconductor Diodes Division	DIODE 4A 50V 20NS DO-201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock4,912	50V	4A	950mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR302HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-201AD, Axial	Stock2,640	20V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SK36AHM2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock3,888	60V	3A	720mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
MUR240RLG	ON Semiconductor	DIODE GEN PURP 400V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock204,384	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C
UPR20E3/TR7	Microsemi Corporation	DIODE GEN PURP 200V 2A POWERMITE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-216AA	Stock7,072	200V	2A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
DB3X207K0L	Panasonic Electronic Components	DIODE GEN PURP 20V 1A MINI3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12ns Current - Reverse Leakage @ Vr: 1.5mA @ 6V Capacitance @ Vr, F: 43pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G3-B Operating Temperature - Junction: 125°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock2,688	20V	1A	400mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	12ns	1.5mA @ 6V	43pF @ 10V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G3-B	125°C (Max)
VS-HFA15TB60-1-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 15A TO220-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock2,361	600 V	15A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 600 V	-	Through Hole	TO-220-3	TO-220-3	-55°C ~ 150°C
SIDC38D60C8X1SA1	Infineon Technologies	DIODE GEN PURP 600V 150A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	600 V	150A	1.9 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 150°C
SK110-LTP-HF	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	100 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SGLW	Taiwan Semiconductor Corporation	DIODE GP 400V 800MA SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	800mA	1.1 V @ 800 mA	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	7pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
LSIC2SD065D08A	Littelfuse Inc.	DIODE SIL CARB 650V 8A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 23 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -	Package: -	Request a Quote	650 V	8A	1.5 V @ 23 A	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-220-2	TO-220AC	-
SK1010C	MDD	DIODE SCHOTTKY 100V 10A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 100 V Capacitance @ Vr, F: 500pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	100 V	10A	850 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	500pF @ 4V, 1MHz	Surface Mount	-	-	-
TSSE3H45H	Taiwan Semiconductor Corporation	3A, 45V, TRENCH SCHOTTKY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	3A	570 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
S1MSP1M-7	Diodes Incorporated	DIODE GP 1KV 1A POWERDI123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI®123 Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,175	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	10 µA @ 1000 V	2.8pF @ 4V, 1MHz	Surface Mount	POWERDI®123	PowerDI™ 123	-55°C ~ 150°C
JANTX1N6875UTK2-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MBR745-BP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: 400pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	7.5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	400pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
BAS40WQ-13-F	Diodes Incorporated	DIODE SCHOT 40V 200MA SOT323 10K Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 200 nA @ 30 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock30,000	40 V	200mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	200 nA @ 30 V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 125°C
SRAS20100H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 20A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	20A	920 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
5-1616379-9	TE Connectivity Aerospace, Defense and Marine	60106003=DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SK32AH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	20 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BASH21MX2WT5G	onsemi	100V & 200V SW DIODE IN X2DFNW2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Supplier Device Package: 2-X2DFNW (1x0.6) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	250 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	3pF @ 0V, 1MHz	Surface Mount, Wettable Flank	2-XDFN	2-X2DFNW (1x0.6)	-55°C ~ 175°C