Page 1128 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

BYT30G-400-TR
STMicroelectronics

DIODE GEN PURP 400V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,072
R9G01812XX
Powerex Inc.

DIODE MODULE 1.8KV 1200A DO200AB

Package: DO-200AB, B-PUK

Stock3,552
VS-41HFR40
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 40A DO203AB

Package: DO-203AB, DO-5, Stud

Stock2,736
VS-30APF06PBF
Vishay Semiconductor Diodes Division

DIODE SOFT FAST 30A TO-247

Package: TO-247-3

Stock3,968
VS-MURB820TRRPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,216
SS3P6L-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A TO277A

Package: TO-277, 3-PowerDFN

Stock6,816
ES2JAHR3G
TSC America Inc.

DIODE, SUPER FAST, 2A, 600V, 35N

Package: DO-214AC, SMA

Stock7,536
S1MLHRQG
TSC America Inc.

DIODE, 1A, 1000V, AEC-Q101, SUB

Package: DO-219AB

Stock7,744
S1BL MQG
TSC America Inc.

DIODE, 1A, 100V, SUB SMA

Package: DO-219AB

Stock3,920
FR103G R0G
TSC America Inc.

DIODE, FAST, 1A, 200V, 150NS, DO

Package: DO-204AL, DO-41, Axial

Stock7,808
RS1J R3G
TSC America Inc.

DIODE, FAST, 1A, 600V, 250NS, DO

Package: DO-214AC, SMA

Stock3,120
1N2131AR
GeneSiC Semiconductor

DIODE GEN PURP REV 200V 60A DO5

Package: DO-203AB, DO-5, Stud

Stock6,880
VS-243NQ100PBF
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 240A D-67

Package: D-67 HALF-PAK

Stock6,080
VS-HFA15TB60PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220AC

Package: TO-220-2

Stock27,600
SB5100
Fairchild/ON Semiconductor

DIODE SCHOTTKY 100V 5A DO201AD

Package: DO-201AD, Axial

Stock1,976,328
PMEG4020ER,115
Nexperia USA Inc.

DIODE SCHOTTKY 40V 2A SOD123W

Package: SOD-123W

Stock294,630
MBR0560-TP
Micro Commercial Co

DIODE SCHOTTKY 60V 500MA SOD123

Package: SOD-123

Stock187,200
SL26B-TP
Micro Commercial Co

DIODE SCHOTTKY 60V 2A DO214AA

Package: -

Stock18,990
QRT1506D_R2_00001
Panjit International Inc.

DIODE GEN PURP 600V 15A TO263

Package: -

Request a Quote
MURA160T3
onsemi

DIODE ULTRA FAST 1A 600V SMA

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BYT30G-400-TR	STMicroelectronics	DIODE GEN PURP 400V 30A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 35µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,072	400V	30A	1.5V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	35µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 150°C
R9G01812XX	Powerex Inc.	DIODE MODULE 1.8KV 1200A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 1200A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 150mA @ 1800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	Package: DO-200AB, B-PUK	Stock3,552	1800V	1200A	1.45V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	25µs	150mA @ 1800V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
VS-41HFR40	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 40A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-203AB, DO-5, Stud	Stock2,736	400V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 190°C
VS-30APF06PBF	Vishay Semiconductor Diodes Division	DIODE SOFT FAST 30A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-247-3	Stock3,968	600V	30A	1.41V @ 30A	Standard Recovery >500ns, > 200mA (Io)	60ns	100µA @ 600V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
VS-MURB820TRRPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,216	200V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
SS3P6L-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock6,816	60V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	200pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
ES2JAHR3G	TSC America Inc.	DIODE, SUPER FAST, 2A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock7,536	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S1MLHRQG	TSC America Inc.	DIODE, 1A, 1000V, AEC-Q101, SUB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock7,744	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BL MQG	TSC America Inc.	DIODE, 1A, 100V, SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock3,920	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
FR103G R0G	TSC America Inc.	DIODE, FAST, 1A, 200V, 150NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock7,808	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RS1J R3G	TSC America Inc.	DIODE, FAST, 1A, 600V, 250NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock3,120	600V	1A	1.3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N2131AR	GeneSiC Semiconductor	DIODE GEN PURP REV 200V 60A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-203AB, DO-5, Stud	Stock6,880	200V	60A	1.1V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
VS-243NQ100PBF	Vishay Semiconductor Diodes Division	DIODE MODULE 100V 240A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 950mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6mA @ 100V Capacitance @ Vr, F: 5500pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 175°C	Package: D-67 HALF-PAK	Stock6,080	100V	240A	950mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	6mA @ 100V	5500pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	D-67	-55°C ~ 175°C
VS-HFA15TB60PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock27,600	600V	15A	1.7V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SB5100	Fairchild/ON Semiconductor	DIODE SCHOTTKY 100V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 380pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock1,976,328	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	380pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
PMEG4020ER,115	Nexperia USA Inc.	DIODE SCHOTTKY 40V 2A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: 95pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: CFP3 Operating Temperature - Junction: 150°C (Max)	Package: SOD-123W	Stock294,630	40V	2A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	95pF @ 10V, 1MHz	Surface Mount	SOD-123W	CFP3	150°C (Max)
MBR0560-TP	Micro Commercial Co	DIODE SCHOTTKY 60V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 700mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123	Stock187,200	60V	500mA	700mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	30pF @ 4V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
SL26B-TP	Micro Commercial Co	DIODE SCHOTTKY 60V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock18,990	60 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
QRT1506D_R2_00001	Panjit International Inc.	DIODE GEN PURP 600V 15A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 3 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	600 V	15A	2.35 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	3 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263	-55°C ~ 175°C
MURA160T3	onsemi	DIODE ULTRA FAST 1A 600V SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -	Package: -	Request a Quote	600 V	2A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	-	Surface Mount	DO-214AC, SMA	SMA	-
JANS1N3595US-TR	Microchip Technology	DIODE GEN PURP 200MA B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 1 nA @ 125 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	-	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
SB840	SMC Diode Solutions	DIODE SCHOTTKY 40V 8A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 200pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	40 V	8A	650 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	200pF @ 5V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5812R	Microchip Technology	DIODE GEN PURP 50V 20A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 300pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	20A	950 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 50 V	300pF @ 10V, 1MHz	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
V8PM63HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 4.3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 4.3A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 60 V Capacitance @ Vr, F: 1460pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock13,500	60 V	4.3A	640 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 60 V	1460pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
JANTXV1N6912UTK2CS-TR	Microchip Technology	DIODE SCHOTTKY 45V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V Capacitance @ Vr, F: 1000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	45 V	25A	640 mV @ 25 A	No Recovery Time > 500mA (Io)	-	1.2 mA @ 45 V	1000pF @ 5V, 1MHz	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 150°C
1N4007C-B-O	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
BAS19W	SMC Diode Solutions	DIODE GEN PURP 120V 200MA SOT323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 nA @ 120 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	120 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	100 nA @ 120 V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-65°C ~ 150°C
SB140_R2_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock11,652	40 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C