Page 1131 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

BY255GPHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.3KV 3A DO201AD

Package: DO-201AD, Axial

Stock5,360
SBL1040
Diodes Incorporated

DIODE SCHOTTKY 40V 10A TO220AC

Package: TO-220-2

Stock72,168
UFS330G/TR13
Microsemi Corporation

DIODE GEN PURP 300V 3A DO215AB

Package: DO-215AB, SMC Gull Wing

Stock5,856
VS-4EWH02FNTRR-M3
Vishay Semiconductor Diodes Division

DIODE FRED 4A 200V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,208
UF5400-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A DO201AD

Package: DO-201AD, Axial

Stock4,016
ESH1PD-M3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

Package: DO-220AA

Stock5,728
GP10JE-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock6,896
BYM11-800-E3/97
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO213AB

Package: DO-213AB, MELF (Glass)

Stock2,496
SF23GHB0G
TSC America Inc.

DIODE, SUPER FAST, 2A, 150V, 35N

Package: DO-204AC, DO-15, Axial

Stock4,016
SF14GHA0G
TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

Package: DO-204AL, DO-41, Axial

Stock2,240
S1MLHM2G
TSC America Inc.

DIODE, 1A, 1000V, AEC-Q101, SUB

Package: DO-219AB

Stock4,592
UPR5E3/TR7
Microsemi Corporation

DIODE GEN PURP 50V 2.5A DO216

Package: DO-216AA

Stock23,940
STPSC10H065DI
STMicroelectronics

DIODE SCHOTTKY 650V 10A TO220AC

Package: TO-220-2 Insulated, TO-220AC

Stock15,492
EGP20C
Fairchild/ON Semiconductor

DIODE GEN PURP 150V 2A DO15

Package: DO-204AC, DO-15, Axial

Stock6,752
GB10MPS17-247
GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 50A TO247-2

Package: -

Request a Quote
UES1104HR2
Microchip Technology

DIODE GEN PURP 200V 2A A AXIAL

Package: -

Request a Quote
1N5407GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 3A DO201AD

Package: -

Stock11,235
CMSH3-100-TR13-PBFREE
Central Semiconductor Corp

DIODE SCHOTTKY 100V 3A SMC

Package: -

Stock8,688
US1M-HF
Comchip Technology

DIODE GEN PURP 1KV 1A DO214AC

Package: -

Stock105,090
DSEP40-03AS-TRL
IXYS

DIODE GEN PURP 300V 40A TO263AA

Package: -

Stock13,329

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BY255GPHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.3KV 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1300V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AD, Axial	Stock5,360	1300V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1300V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
SBL1040	Diodes Incorporated	DIODE SCHOTTKY 40V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2	Stock72,168	40V	10A	600mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
UFS330G/TR13	Microsemi Corporation	DIODE GEN PURP 300V 3A DO215AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-215AB, SMC Gull Wing	Stock5,856	300V	3A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 175°C
VS-4EWH02FNTRR-M3	Vishay Semiconductor Diodes Division	DIODE FRED 4A 200V DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 3µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,208	200V	4A	950mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	3µA @ 200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
UF5400-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock4,016	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	45pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ESH1PD-M3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-220AA	Stock5,728	200V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
GP10JE-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock6,896	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 600V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
BYM11-800-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AB, MELF (Glass)	Stock2,496	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SF23GHB0G	TSC America Inc.	DIODE, SUPER FAST, 2A, 150V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock4,016	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF14GHA0G	TSC America Inc.	DIODE, SUPER FAST, 1A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock2,240	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1MLHM2G	TSC America Inc.	DIODE, 1A, 1000V, AEC-Q101, SUB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock4,592	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
UPR5E3/TR7	Microsemi Corporation	DIODE GEN PURP 50V 2.5A DO216 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-216AA	Stock23,940	50V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 50V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
STPSC10H065DI	STMicroelectronics	DIODE SCHOTTKY 650V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-220-2 Insulated, TO-220AC	Stock15,492	650V	10A	1.75V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 650V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	-40°C ~ 175°C
EGP20C	Fairchild/ON Semiconductor	DIODE GEN PURP 150V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock6,752	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 150V	70pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
GB10MPS17-247	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 50A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 12 µA @ 1700 V Capacitance @ Vr, F: 669pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	1700 V	50A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	12 µA @ 1700 V	669pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
UES1104HR2	Microchip Technology	DIODE GEN PURP 200V 2A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -	Package: -	Request a Quote	200 V	2A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	-	-	Through Hole	A, Axial	A, Axial	-
1N5407GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock11,235	800 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
CMSH3-100-TR13-PBFREE	Central Semiconductor Corp	DIODE SCHOTTKY 100V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Stock8,688	100 V	3A	800 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
US1M-HF	Comchip Technology	DIODE GEN PURP 1KV 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock105,090	1000 V	1A	1.65 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
DSEP40-03AS-TRL	IXYS	DIODE GEN PURP 300V 40A TO263AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 40 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 50pF @ 150V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock13,329	300 V	40A	1.44 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 300 V	50pF @ 150V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AA	-55°C ~ 175°C
SS22HE3-LTP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 20 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	20 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	90pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
GC08MPS12-220	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 43A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 43A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 7 µA @ 1200 V Capacitance @ Vr, F: 545pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	1200 V	43A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	7 µA @ 1200 V	545pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SV5100B_R2_00001	Panjit International Inc.	DIODE SCHOTTKY 100V 5A TO277B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 100 V Capacitance @ Vr, F: 475pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277B Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock11,505	100 V	5A	870 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	15 µA @ 100 V	475pF @ 0V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
FS2JFL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	600 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	50pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SMA-FL)	-50°C ~ 150°C
S2Y-LTP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Current - Reverse Leakage @ Vr: 5 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1600 V	1.5A	1.15 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	5 µA @ 1600 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
VSSAF510-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 5A DO221AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: 440pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock64,146	100 V	5A	750 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	440pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 150°C
1S2076JRE	Renesas Electronics Corporation	DIODE FOR HIGH SPEED SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MSASC75H45FS-TR	Microchip Technology	DIODE SCHOTTKY 45V 75A THINKEY3 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7.5 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	75A	650 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	7.5 mA @ 45 V	-	Surface Mount	ThinKey™3	ThinKey™3	-55°C ~ 150°C