Page 1141 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4248GPHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock5,328
PR1501G-T
Diodes Incorporated

DIODE GEN PURP 50V 1.5A DO15

Package: DO-204AC, DO-15, Axial

Stock3,312
50WQ03FNTRR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,504
D770N14T
Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 1200V 1590A

Package: -

Stock3,392
1N4590R
Powerex Inc.

DIODE GEN PURP 400V 150A DO205AA

Package: DO-205AA, DO-8, Stud

Stock7,136
S40BR
GeneSiC Semiconductor

DIODE GEN PURP REV 100V 40A DO5

Package: DO-203AB, DO-5, Stud

Stock2,784
VF30100S-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 100V ITO220AB

Package: TO-220-3 Isolated Tab

Stock7,488
HSM180JE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 80V 1A DO214BA

Package: DO-214BA

Stock2,592
SS10P6HM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 7A TO277A

Package: TO-277, 3-PowerDFN

Stock6,624
RS2G/1
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO214AA

Package: DO-214AA, SMB

Stock4,320
RM 1B
Sanken

DIODE GEN PURP 800V 800MA AXIAL

Package: Axial

Stock4,032
AM01ZV
Sanken

DIODE GEN PURP 200V 1A AXIAL

Package: Axial

Stock7,152
SK210AHM2G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 1

Package: DO-214AC, SMA

Stock3,520
BCP56-16TF
Nexperia USA Inc.

BCP56-16T/SOT223/SC-73

Package: -

Stock7,056
VS-CPU6006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

Package: TO-247-3

Stock2,640
SRF1060 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

Package: TO-220-3 Full Pack, Isolated Tab

Stock7,584
BYV25D-600,118
WeEn Semiconductors

DIODE GEN PURP 600V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock64,626
CMOD2004 TR
Central Semiconductor Corp

DIODE GEN PURP 240V 200MA SOD523

Package: SC-79, SOD-523

Stock53,712
S2B-E3/52T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.5A DO214AA

Package: DO-214AA, SMB

Stock210,960
10A02-T
Diodes Incorporated

DIODE GEN PURP 100V 10A R6

Package: R6, Axial

Stock48,000

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4248GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 160°C	Package: DO-204AL, DO-41, Axial	Stock5,328	800V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 160°C
PR1501G-T	Diodes Incorporated	DIODE GEN PURP 50V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock3,312	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
50WQ03FNTRR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 5.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5.5A Voltage - Forward (Vf) (Max) @ If: 460mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,504	30V	5.5A	460mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
D770N14T	Infineon Technologies Industrial Power and Controls Americas	DIODE RECTIFIER 1200V 1590A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock3,392	-	-	-	-	-	-	-	-	-	-	-
1N4590R	Powerex Inc.	DIODE GEN PURP 400V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock7,136	400V	150A	-	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 400V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
S40BR	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-203AB, DO-5, Stud	Stock2,784	100V	40A	1.1V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 190°C
VF30100S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30A 100V ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-3 Isolated Tab	Stock7,488	100V	30A	910mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Through Hole	TO-220-3 Isolated Tab	ITO-220AB	-40°C ~ 150°C
HSM180JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 80V 1A DO214BA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 840mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214BA	Stock2,592	80V	1A	840mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 80V	-	Surface Mount	DO-214BA	DO-214BA	-55°C ~ 175°C
SS10P6HM3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 7A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 7A Voltage - Forward (Vf) (Max) @ If: 670mV @ 7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 560pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock6,624	60V	7A	670mV @ 7A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	560pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
RS2G/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock4,320	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RM 1B	Sanken	DIODE GEN PURP 800V 800MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock4,032	800V	800mA	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
AM01ZV	Sanken	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock7,152	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
SK210AHM2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock3,520	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BCP56-16TF	Nexperia USA Inc.	BCP56-16T/SOT223/SC-73 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock7,056	-	-	-	-	-	-	-	-	-	-	-
VS-CPU6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2X30A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-247-3	Stock2,640	600V	30A	1.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	30µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
SRF1060 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 10A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3 Full Pack, Isolated Tab	Stock7,584	60V	10A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
BYV25D-600,118	WeEn Semiconductors	DIODE GEN PURP 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: 150°C (Max)	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock64,626	600V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	150°C (Max)
CMOD2004 TR	Central Semiconductor Corp	DIODE GEN PURP 240V 200MA SOD523 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 240V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 240V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C	Package: SC-79, SOD-523	Stock53,712	240V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 240V	5pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-65°C ~ 150°C
S2B-E3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock210,960	100V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
10A02-T	Diodes Incorporated	DIODE GEN PURP 100V 10A R6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -65°C ~ 150°C	Package: R6, Axial	Stock48,000	100V	10A	1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	150pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-65°C ~ 150°C
WNSC2D151200W6Q	WeEn Semiconductors	WNSC2D151200W/TO247-2L/STANDARD Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 150 µA @ 1200 V Capacitance @ Vr, F: 700pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C	Package: -	Request a Quote	1200 V	15A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	700pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	175°C
NTE5871	NTE Electronics, Inc	DIODE GEN PURP 50V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 50 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
PMEG100T20ELP-QX	Nexperia USA Inc.	DIODE SCHOTT 100V 2A SOD128/CFP5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Current - Reverse Leakage @ Vr: 1.25 µA @ 100 V Capacitance @ Vr, F: 200pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C	Package: -	Stock8,514	100 V	2A	800 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	12 ns	1.25 µA @ 100 V	200pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C
CRG07-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 700MA S-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 175°C (Max)	Package: -	Stock13,140	400 V	700mA	1.1 V @ 700 mA	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	175°C (Max)
ES2BWF-HF	Comchip Technology	DIODE GEN PURP 100V 2A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	30pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
JANTX1N6857UR-1	Microchip Technology	DIODE SCHOTTKY 16V 150MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 16 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 nA @ 16 V Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	16 V	150mA	750 mV @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	4.5pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
JANTXV1N5712-1	Microchip Technology	DIODE SCHOTTKY 16V 33MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 16 V Current - Average Rectified (Io): 33mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 nA @ 16 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	16 V	33mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 150°C
SF32-TP	Micro Commercial Co	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	100 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C