Page 1142 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SIDC06D120H6
Infineon Technologies

DIODE GEN PURP 1.2KV 7.5A WAFER

Package: Die

Stock2,384
RL102-N-2-3-AP
Micro Commercial Co

DIODE GEN PURP 100V 1A A-405

Package: Axial, Radial Bend

Stock2,448
RGP15GHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO204AC

Package: DO-204AC, DO-15, Axial

Stock4,800
BY396P-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

Package: DO-201AD, Axial

Stock3,888
1N5398GPHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1.5A DO204AC

Package: DO-204AC, DO-15, Axial

Stock7,568
R6202240XXOO
Powerex Inc.

DIODE MODULE 2.2KV 400A DO200AA

Package: DO-200AA, A-PUK

Stock6,816
R6220230PSOO
Powerex Inc.

DIODE MODULE 200V 300A DO200AA

Package: DO-200AA, A-PUK

Stock3,472
F50
Semtech Corporation

DIODE GEN PURP 5KV 180MA AXIAL

Package: Axial

Stock5,600
DSB20I15PA
IXYS

DIODE SCHOTTKY 15V 20A TO220AC

Package: TO-220-2

Stock5,776
VS-8TQ100S-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,744
SF38GHA0G
TSC America Inc.

DIODE, SUPER FAST, 3A, 600V, 35N

Package: DO-201AD, Axial

Stock6,048
APD340VG-E1
Diodes Incorporated

DIODE SCHOTTKY 40V 3A DO15

Package: DO-204AC, DO-15, Axial

Stock2,048
HS3JB R5G
TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 600V,

Package: DO-214AA, SMB

Stock5,904
SS22MHRSG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 2

Package: 2-SMD, Flat Lead

Stock3,520
VS-8ETH06SPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,738
BAR18FILM
STMicroelectronics

DIODE SCHOTTKY 70V 70MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock596,640
GS1N_R1_00001
Panjit International Inc.

DIODE GEN PURP 1.2KV 1A SMA

Package: -

Stock4,464
FSM14HL-TP
Micro Commercial Co

RECTIFIERS

Package: -

Request a Quote
RHRG75100
Harris Corporation

DIODE AVALANCHE 1KV 75A TO247

Package: -

Request a Quote
RS2JH
Taiwan Semiconductor Corporation

250NS, 2A, 600V, FAST RECOVERY R

Package: -

Stock18,000

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC06D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 7.5A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 7.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 7.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock2,384	1200V	7.5A (DC)	1.6V @ 7.5A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
RL102-N-2-3-AP	Micro Commercial Co	DIODE GEN PURP 100V 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial, Radial Bend Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 150°C	Package: Axial, Radial Bend	Stock2,448	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	Axial, Radial Bend	A-405	-55°C ~ 150°C
RGP15GHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.5A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AC, DO-15, Axial	Stock4,800	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
BY396P-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 125°C	Package: DO-201AD, Axial	Stock3,888	100V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 100V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 125°C
1N5398GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1.5A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AC, DO-15, Axial	Stock7,568	800V	1.5A	1.4V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
R6202240XXOO	Powerex Inc.	DIODE MODULE 2.2KV 400A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 9µs Current - Reverse Leakage @ Vr: 50mA @ 2200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	Package: DO-200AA, A-PUK	Stock6,816	2200V	400A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	9µs	50mA @ 2200V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
R6220230PSOO	Powerex Inc.	DIODE MODULE 200V 300A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 2.75V @ 800A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 50mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	Package: DO-200AA, A-PUK	Stock3,472	200V	300A	2.75V @ 800A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	50mA @ 200V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
F50	Semtech Corporation	DIODE GEN PURP 5KV 180MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5000V Current - Average Rectified (Io): 180mA Voltage - Forward (Vf) (Max) @ If: 10V @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 250nA @ 5000V Capacitance @ Vr, F: 1.7pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: Axial	Stock5,600	5000V	180mA	10V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	250nA @ 5000V	1.7pF @ 5V, 1MHz	Through Hole	Axial	-	-65°C ~ 175°C
DSB20I15PA	IXYS	DIODE SCHOTTKY 15V 20A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 480mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 15V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock5,776	15V	20A	480mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 15V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
VS-8TQ100S-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 80V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,744	100V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 80V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 175°C
SF38GHA0G	TSC America Inc.	DIODE, SUPER FAST, 3A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock6,048	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
APD340VG-E1	Diodes Incorporated	DIODE SCHOTTKY 40V 3A DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -50°C ~ 125°C	Package: DO-204AC, DO-15, Axial	Stock2,048	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-50°C ~ 125°C
HS3JB R5G	TSC America Inc.	DIODE, HIGH EFFICIENT, 3A, 600V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock5,904	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS22MHRSG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 20V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: 2-SMD, Flat Lead	Stock3,520	20V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 20V	35pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
VS-8ETH06SPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,738	600V	8A	2.4V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
BAR18FILM	STMicroelectronics	DIODE SCHOTTKY 70V 70MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock596,640	70V	70mA (DC)	410mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)
GS1N_R1_00001	Panjit International Inc.	DIODE GEN PURP 1.2KV 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1200 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock4,464	1200 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1200 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
FSM14HL-TP	Micro Commercial Co	RECTIFIERS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HL Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	10pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HL	-55°C ~ 150°C
RHRG75100	Harris Corporation	DIODE AVALANCHE 1KV 75A TO247 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 3 V @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 500 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	1000 V	75A	3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 1000 V	-	Through Hole	TO-247-3	TO-247	-65°C ~ 175°C
RS2JH	Taiwan Semiconductor Corporation	250NS, 2A, 600V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock18,000	600 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S38120	Microchip Technology	DIODE GEN PURP 1.2KV 100A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	1200 V	100A	1.15 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 1200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
SGL1-100	Diotec Semiconductor	SCHOTTKY MINIMELF 100V 1A 150C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA, MINI-MELF Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	100 V	1A	820 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Surface Mount	DO-213AA	DO-213AA, MINI-MELF	-50°C ~ 150°C
ES5CB-HF	Comchip Technology	DIODE GP 150V 5A SMB/DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	150 V	5A	1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 150 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C
V30K60-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 5.2A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5.2A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V Capacitance @ Vr, F: 3300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock8,367	60 V	5.2A	650 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.2 mA @ 60 V	3300pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 150°C
CDBA3100LR-HF	Comchip Technology	DIODE SCHOTTKY 100V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	100 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	250pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 150°C
CDBJFSC3650-G	Comchip Technology	DIODE SIL CARBIDE 650V 3A TO220F Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 190pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,413	650 V	3A	1.7 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	190pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220F	-55°C ~ 175°C
SS32HT-TP	Micro Commercial Co	DIODE SCHOTTKY 20V 3A SOD123HT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: SOD-123HT Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	20 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	160pF @ 4V, 1MHz	Surface Mount	SOD-123T	SOD-123HT	-55°C ~ 125°C
1N1343	Solid State Inc.	DIODE GEN PURP 150V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	150 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 150 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C