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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock6,880 |
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- | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE SCHOTTKY 20V 1A DO215AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-215AA, SMB Gull Wing
- Supplier Device Package: DO-215AA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-215AA, SMB Gull Wing |
Stock87,720 |
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20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Surface Mount | DO-215AA, SMB Gull Wing | DO-215AA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO214BA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA (GF1)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214BA |
Stock5,360 |
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50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 50V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Powerex Inc. |
DIODE GEN PURP 600V 220A DO205AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 220A
- Voltage - Forward (Vf) (Max) @ If: 2.75V @ 800A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 50mA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -45°C ~ 150°C
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Package: DO-205AB, DO-9, Stud |
Stock6,832 |
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600V | 220A | 2.75V @ 800A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 50mA @ 600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -45°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 800V 100A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 13mA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock5,168 |
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800V | 100A | 1.5V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 13mA @ 800V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 150A DO205AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 17mA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AC, DO-30, Stud
- Supplier Device Package: DO-205AC (DO-30)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-205AC, DO-30, Stud |
Stock7,232 |
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300V | 150A | 1.2V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 17mA @ 300V | - | Chassis, Stud Mount | DO-205AC, DO-30, Stud | DO-205AC (DO-30) | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE HYPERFAST 8A 600V TO-220FP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220 Full Pack
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-220-2 Full Pack |
Stock6,880 |
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600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220 Full Pack | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 5A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: TO-220-2 Full Pack |
Stock2,560 |
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20V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 125°C |
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TSC America Inc. |
DIODE, 8A, 1000V, AEC-Q101, TO-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock2,224 |
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- | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 50pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE HYPERFAST 600V 6A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,792 |
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600V | 6A | 2.1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock6,864 |
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20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock4,112 |
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50V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 100V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock5,728 |
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100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 0.5A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock7,680 |
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60V | 500mA | 700mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 80pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, 3A, 400V, DO-214AB (SMC)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock5,744 |
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400V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 500nA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: A, Axial |
Stock7,776 |
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600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Micro Commercial Co |
DIODE SCHOTTKY 40V 200MA SOD523
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-79, SOD-523 |
Stock3,312 |
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40V | 200mA | 550mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 40V | - | Surface Mount | SC-79, SOD-523 | SOD-523 | 125°C (Max) |
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Comchip Technology |
DIODE GEN PURP 400V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock6,784 |
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400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 150V 7.5A DIE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 7.5A
- Voltage - Forward (Vf) (Max) @ If: 890 mV @ 7.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 150 V
- Capacitance @ Vr, F: 250pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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150 V | 7.5A | 890 mV @ 7.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 150 V | 250pF @ 5V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
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Solid State Inc. |
DIODE GEN PURP 500V 40A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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500 V | 40A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | - |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA CST2B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 30 V
- Capacitance @ Vr, F: 118pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: CST2B
- Operating Temperature - Junction: 125°C (Max)
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Package: - |
Stock29,943 |
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30 V | 500mA | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 30 V | 118pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | CST2B | 125°C (Max) |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 1A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 40 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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40 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
5A, 200V, STANDARD RECOVERY RECT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 34pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock9,000 |
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200 V | 5A | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | 34pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Microchip Technology |
DIODE GP 1.1KV 1A A SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 1100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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1100 V | 1A | 1.75 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 1 µA @ 1100 V | - | Surface Mount | SQ-MELF, A | A, SQ-MELF | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 150V 12A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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150 V | 12A | 1.08 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 150 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 1KV 60A D3PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 280 ns
- Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: D3PAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1000 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 280 ns | 250 µA @ 1000 V | - | Surface Mount | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | D3PAK | -55°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 170V 3.2A FLATPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 170 V
- Current - Average Rectified (Io): 3.2A
- Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 170 V
- Capacitance @ Vr, F: 800pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: FlatPAK (5x6)
- Operating Temperature - Junction: -40°C ~ 165°C
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Package: - |
Request a Quote |
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170 V | 3.2A | 1.02 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 170 V | 800pF @ 4V, 1MHz | Surface Mount | 8-PowerTDFN | FlatPAK (5x6) | -40°C ~ 165°C |
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Panjit International Inc. |
DIODE SCHOTTKY 60V 3A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 60 V
- Capacitance @ Vr, F: 125pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock2,256 |
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60 V | 3A | 740 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | 125pF @ 0V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 150°C |