Page 1150 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4247GP-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock7,040
BAT30LFILM
STMicroelectronics

DIODE SCHOTTKY 30V 300MA SOD923

Package: SOD-923

Stock2,896
SS24-E3/51T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO214AA

Package: DO-214AA, SMB

Stock3,376
R5030413LSWA
Powerex Inc.

DIODE GEN PURP 400V 125A DO205AA

Package: DO-205AA, DO-8, Stud

Stock6,960
VS-12FLR10S02
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 12A DO203AA

Package: DO-203AA, DO-4, Stud

Stock3,056
MBRF1090-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 10A ITO220AC

Package: TO-220-2 Full Pack, Isolated Tab

Stock5,056
V20150SG-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 20A TO220AB

Package: TO-220-3

Stock7,376
ES3A-M3/57T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A DO214AB

Package: DO-214AB, SMC

Stock3,040
RSFKL RUG
TSC America Inc.

DIODE, FAST, 0.5A, 800V, 500NS,

Package: DO-219AB

Stock2,800
CMR5H-06 TR13
Central Semiconductor Corp

DIODE HYPERFAST 600V 5A SMC

Package: DO-214AB, SMC

Stock6,144
GF1M
Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 1A SMA

Package: DO-214AC, SMA

Stock682,932
BYM10-1000-E3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

Package: DO-213AB, MELF (Glass)

Stock143,280
1N4001GP-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock77,598
SDT2U60CP3-7
Diodes Incorporated

SCHOTTKY RECTIFIER X3-DSN1406-2

Package: -

Request a Quote
HS3J-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

Package: -

Request a Quote
V30K170-M3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 170V 3.4A FLATPAK

Package: -

Request a Quote
C6D10065A
Wolfspeed, Inc.

DIODE SIL CARB 650V 37A TO220-2

Package: -

Stock3,024
S1GLH
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SUB SMA

Package: -

Request a Quote
PU4DCH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 4A DO214AB

Package: -

Stock15,726
ER1C-TP
Micro Commercial Co

DIODE GP 150V 1A DO214AA HSMB

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4247GP-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 160°C	Package: DO-204AL, DO-41, Axial	Stock7,040	600V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 160°C
BAT30LFILM	STMicroelectronics	DIODE SCHOTTKY 30V 300MA SOD923 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 530mV @ 300mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 22pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923 Operating Temperature - Junction: 150°C (Max)	Package: SOD-923	Stock2,896	30V	300mA (DC)	530mV @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 30V	22pF @ 0V, 1MHz	Surface Mount	SOD-923	SOD-923	150°C (Max)
SS24-E3/51T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-214AA, SMB	Stock3,376	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 125°C
R5030413LSWA	Powerex Inc.	DIODE GEN PURP 400V 125A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 700ns Current - Reverse Leakage @ Vr: 45mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 150°C	Package: DO-205AA, DO-8, Stud	Stock6,960	400V	125A	2.5V @ 470A	Standard Recovery >500ns, > 200mA (Io)	700ns	45mA @ 400V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 150°C
VS-12FLR10S02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 50µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AA, DO-4, Stud	Stock3,056	100V	12A	1.4V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	50µA @ 100V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
MBRF1090-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 10A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2 Full Pack, Isolated Tab	Stock5,056	90V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
V20150SG-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 150V 20A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3	Stock7,376	150V	20A	1.6V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 150V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
ES3A-M3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock3,040	50V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 50V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
RSFKL RUG	TSC America Inc.	DIODE, FAST, 0.5A, 800V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock2,800	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CMR5H-06 TR13	Central Semiconductor Corp	DIODE HYPERFAST 600V 5A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AB, SMC	Stock6,144	600V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	22ns	1µA @ 600V	17pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
GF1M	Fairchild/ON Semiconductor	DIODE GEN PURP 1KV 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AC, SMA	Stock682,932	1000V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 175°C
BYM10-1000-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AB, MELF (Glass)	Stock143,280	1000V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
1N4001GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock77,598	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 50V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SDT2U60CP3-7	Diodes Incorporated	SCHOTTKY RECTIFIER X3-DSN1406-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 110pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 2-DFN Supplier Device Package: X3-DSN1406-2 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	60 V	2A	580 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	110pF @ 10V, 1MHz	Surface Mount	2-DFN	X3-DSN1406-2	-55°C ~ 150°C
HS3J-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
V30K170-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 170V 3.4A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 170 V Current - Average Rectified (Io): 3.4A Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 170 V Capacitance @ Vr, F: 1250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C	Package: -	Request a Quote	170 V	3.4A	1.04 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 170 V	1250pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 165°C
C6D10065A	Wolfspeed, Inc.	DIODE SIL CARB 650V 37A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 37A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 611pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock3,024	650 V	37A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	611pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
S1GLH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.8 µs	5 µA @ 400 V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
PU4DCH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 78pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock15,726	200 V	4A	930 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 200 V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ER1C-TP	Micro Commercial Co	DIODE GP 150V 1A DO214AA HSMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA, HSMB Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	150 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 150 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA, HSMB	-50°C ~ 150°C
15MQ060N	SMC Diode Solutions	DIODE SCHOTTKY 60V 2.1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 60 V Capacitance @ Vr, F: 250pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock53,529	60 V	2.1A	500 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	250pF @ 10V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 125°C
S3D30065H	SMC Diode Solutions	DIODE SIL CARB 650V 84A TO247AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 84A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 140 µA @ 650 V Capacitance @ Vr, F: 2307pF @ 0V, 100MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock750	650 V	84A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	2307pF @ 0V, 100MHz	Through Hole	TO-247-2	TO-247AC	-55°C ~ 175°C
V10PWM12-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 120V 10A SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 120 V Capacitance @ Vr, F: 1130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	120 V	10A	820 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 120 V	1130pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 175°C
SF3004PT	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 30A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock2,667	200 V	30A	950 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
CPW2-1200-S005B-FR1	Wolfspeed, Inc.	DIODE SCHOTTKY 1200V 5A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANS1N5553US-TR	Microchip Technology	STD RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	800 V	3A	1.3 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 800 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
M0790YC200	IXYS	DIODE GEN PURP 2KV 790A W2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000 V Current - Average Rectified (Io): 790A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 635 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Current - Reverse Leakage @ Vr: 30 mA @ 2000 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, A-PUK Supplier Device Package: W2 Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	2000 V	790A	1.6 V @ 635 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	30 mA @ 2000 V	-	Clamp On	DO-200AB, A-PUK	W2	-40°C ~ 150°C
SBA0820AS-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 20V 800MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	20 V	800mA	550 mV @ 800 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	-	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C