Page 122 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

DL4005-13
Diodes Incorporated

DIODE GEN PURP 600V 1A MELF

Package: DO-213AB, MELF

Stock7,280
VS-100BGQ100HF4
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 100A POWERTAB

Package: PowerTab?

Stock2,464
SRA8150 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

Package: TO-220-2

Stock5,440
BYV29F-400-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A ITO220AC

Package: TO-220-2 Full Pack, Isolated Tab

Stock7,840
SS3P4LHM3_A/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A TO277A

Package: TO-277, 3-PowerDFN

Stock6,400
AP01C
Sanken

DIODE GEN PURP 1KV 200MA AXIAL

Package: Axial

Stock4,512
SBE001-TL-W
ON Semiconductor

DIODE SCHOTTKY 30V 2A 6CPH

Package: SC-74, SOT-457

Stock5,024
HS1JL RTG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

Package: DO-219AB

Stock7,008
S1KLHRUG
TSC America Inc.

DIODE, 1A, 800V, AEC-Q101, SUB S

Package: DO-219AB

Stock6,928
RL255GP-TP
Micro Commercial Co

DIODE GEN PURP 2.5A 600V R3

Package: R-3, Axial

Stock3,792
SK34B R5G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

Package: DO-214AA, SMB

Stock3,248
UF5407-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

Package: DO-201AD, Axial

Stock7,568
NXPLQSC10650Q
WeEn Semiconductors

DIODE SCHOTTKY 650V 10A TO220-2

Package: TO-220-2

Stock46,644
VS-T40HF60
Vishay Semiconductor Diodes Division

DIODE MODULE 600V 40A D-55

Package: D-55 T-Module

Stock17,910
S5X
Diotec Semiconductor

IC

Package: -

Request a Quote
1N6911UTK2CS
Microchip Technology

DIODE SCHOTTKY 30V 25A THINKEY2

Package: -

Request a Quote
MURS3060F-BP
Micro Commercial Co

Interface

Package: -

Request a Quote
S2GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A DO214AA

Package: -

Stock18,000
S1JR3
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

Package: -

Request a Quote
S34160
Microchip Technology

DIODE GEN PURP 1.6KV DO5

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DL4005-13	Diodes Incorporated	DIODE GEN PURP 600V 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-213AB, MELF	Stock7,280	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-55°C ~ 150°C
VS-100BGQ100HF4	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 100A POWERTAB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 630mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.4mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: PowerTab? Supplier Device Package: PowerTab? Operating Temperature - Junction: -55°C ~ 150°C	Package: PowerTab?	Stock2,464	30V	100A	630mV @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.4mA @ 30V	-	Through Hole	PowerTab?	PowerTab?	-55°C ~ 150°C
SRA8150 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C	Package: TO-220-2	Stock5,440	150V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
BYV29F-400-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-2 Full Pack, Isolated Tab	Stock7,840	400V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-40°C ~ 150°C
SS3P4LHM3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 470mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock6,400	40V	3A	470mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 40V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
AP01C	Sanken	DIODE GEN PURP 1KV 200MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock4,512	1000V	200mA	4V @ 200mA	Small Signal =< 200mA (Io), Any Speed	200ns	100µA @ 1000V	-	Through Hole	Axial	-	-40°C ~ 150°C
SBE001-TL-W	ON Semiconductor	DIODE SCHOTTKY 30V 2A 6CPH Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 100µA @ 15V Capacitance @ Vr, F: 70pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-CPH Operating Temperature - Junction: -55°C ~ 125°C	Package: SC-74, SOT-457	Stock5,024	30V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	100µA @ 15V	70pF @ 10V, 1MHz	Surface Mount	SC-74, SOT-457	6-CPH	-55°C ~ 125°C
HS1JL RTG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 600V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock7,008	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1KLHRUG	TSC America Inc.	DIODE, 1A, 800V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock6,928	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
RL255GP-TP	Micro Commercial Co	DIODE GEN PURP 2.5A 600V R3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-3, Axial Supplier Device Package: R-3 Operating Temperature - Junction: -55°C ~ 150°C	Package: R-3, Axial	Stock3,792	600V	2.5A	1.1V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	40pF @ 4V, 1MHz	Through Hole	R-3, Axial	R-3	-55°C ~ 150°C
SK34B R5G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AA, SMB	Stock3,248	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
UF5407-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 36pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock7,568	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	36pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
NXPLQSC10650Q	WeEn Semiconductors	DIODE SCHOTTKY 650V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 230µA @ 650V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	Package: TO-220-2	Stock46,644	650V	10A	1.85V @ 10A	No Recovery Time > 500mA (Io)	0ns	230µA @ 650V	250pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
VS-T40HF60	Vishay Semiconductor Diodes Division	DIODE MODULE 600V 40A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	Package: D-55 T-Module	Stock17,910	600V	40A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 600V	-	Chassis Mount	D-55 T-Module	D-55	-
S5X	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	1800 V	8A	1.1 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1800 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 150°C
1N6911UTK2CS	Microchip Technology	DIODE SCHOTTKY 30V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V Capacitance @ Vr, F: 1250pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	30 V	25A	540 mV @ 25 A	No Recovery Time > 500mA (Io)	-	1.2 mA @ 30 V	1250pF @ 5V, 1MHz	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 150°C
MURS3060F-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	5 µA @ 600 V	200pF @ 4V, 1MHz	Through Hole	TO-220-2 Isolated Tab	ITO-220AC	-55°C ~ 175°C
S2GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock18,000	400 V	2A	1.15 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	1 µA @ 400 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JR3	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	1 µA @ 600 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S34160	Microchip Technology	DIODE GEN PURP 1.6KV DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	1600 V	45A	1.15 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
S3JAL	Taiwan Semiconductor Corporation	3A, 600V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 14pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock83,400	600 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	14pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
S50460TS	Microchip Technology	DIODE GP 600V 300A DO205AB DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	600 V	300A	1.25 V @ 1000 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 600 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C
RFC02MM2STFTR	Rohm Semiconductor	DIODE GEN PURP 200V 500MA PMDU Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	Package: -	Stock18,000	200 V	500mA	950 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
SF17G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 500 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	500 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 500 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
JANTX1N6942UTK3AS	Microchip Technology	DIODE SCHOTTKY 45V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 45 V Capacitance @ Vr, F: 7000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	45 V	150A	460 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 45 V	7000pF @ 5V, 1MHz	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 150°C
BAT46WS	Diotec Semiconductor	DIODE SCHOTTKY 100V 150MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 10pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock12,240	100 V	150mA	450 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	6 ns	5 µA @ 75 V	10pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-55°C ~ 150°C
DPG30IM400PC-TUB	IXYS	DIODE GEN PURP 400V 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 32pF @ 200V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	400 V	30A	1.43 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	1 µA @ 400 V	32pF @ 200V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)	-55°C ~ 175°C
1S2076TA-E	Renesas Electronics Corporation	DIODE FOR HIGH SPEED SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-