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ON Semiconductor |
DIODE GEN PURP 200V 16A TO220FP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
- Operating Temperature - Junction: -
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Package: TO-220-3 Full Pack |
Stock2,304 |
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200V | 16A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | TO-220-3 Full Pack | TO-220FP | - |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 150V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 150V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock5,760 |
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150V | 200mA | 1.1V @ 300mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 150V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Semtech Corporation |
DIODE GEN PURP 16KV 6A MODULE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 16000V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 16V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 2µA @ 16000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Module |
Stock7,760 |
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16000V | 6A | 16V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 2µA @ 16000V | - | Chassis Mount | Module | - | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 40A TO247AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 180ns
- Current - Reverse Leakage @ Vr: 100µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC Modified
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-247-2 |
Stock4,576 |
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400V | 40A | 1.25V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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WeEn Semiconductors |
DIODE GEN PURP 500V 10A TO220F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.9V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55ns
- Current - Reverse Leakage @ Vr: 200µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: TO-220FP
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock3,872 |
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500V | 10A | 2.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 200µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 15A TO262
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 22ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package: TO-262
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,440 |
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200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 200V | - | Through Hole | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 3V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock93,240 |
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600V | 8A | 3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-2 |
Stock2,144 |
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300V | 8A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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SMC Diode Solutions |
DIODE GEN PURP 200V 15A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock7,536 |
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200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Sanken |
DIODE GEN PURP 200V 2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 50µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock5,264 |
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200V | 2A | 980mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Bourns Inc. |
DIODE GEN PURP 50V 3A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock3,728 |
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50V | 3A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 6
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock3,552 |
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60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, 1A, 50V, AEC-Q101, DO-204
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock3,504 |
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50V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Aeroflex Metelics, Division of MACOM |
DIODE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 300mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 6ns
- Current - Reverse Leakage @ Vr: 100µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: 05 Plastic Package
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: Axial |
Stock7,520 |
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50V | 300mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100µA @ 50V | - | Through Hole | Axial | 05 Plastic Package | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 70A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 9mA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock6,416 |
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800V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 50V 200MA DO34
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: 8pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
- Operating Temperature - Junction: 125°C (Max)
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Package: DO-204AG, DO-34, Axial |
Stock3,632 |
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50V | 200mA | 900mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 40V | 8pF @ 1V, 1MHz | Through Hole | DO-204AG, DO-34, Axial | DO-34 | 125°C (Max) |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 20V 1A SOD123F
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 340mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 12.4ns
- Current - Reverse Leakage @ Vr: 600µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SOD-123F |
Stock16,260 |
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20V | 1A | 340mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 12.4ns | 600µA @ 20V | - | Surface Mount | SOD-123F | SOD-123F | -55°C ~ 125°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 60V 200MA SOD882D
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4.5ns
- Current - Reverse Leakage @ Vr: 100µA @ 60V
- Capacitance @ Vr, F: 20pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: 2-DFN1006D (0.6x1.0)
- Operating Temperature - Junction: 150°C (Max)
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Package: 2-XDFN |
Stock285,204 |
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60V | 200mA | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4.5ns | 100µA @ 60V | 20pF @ 1V, 1MHz | Surface Mount | 2-XDFN | 2-DFN1006D (0.6x1.0) | 150°C (Max) |
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Microchip Technology |
DIODE GEN PURP 50V 3A D-5B
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, E
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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50 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 50 V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 150V 8A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Capacitance @ Vr, F: 470pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock13,500 |
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150 V | 8A | 870 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | 470pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 500V 15A TO254
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 400 V
- Capacitance @ Vr, F: 150pF @ 10V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA
- Supplier Device Package: TO-254
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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500 V | 15A | 1.55 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 50 µA @ 400 V | 150pF @ 10V, 1MHz | Through Hole | TO-254-3, TO-254AA | TO-254 | - |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 20A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 42 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
600 V | 20A | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 5 µA @ 600 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 175°C |
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Nexperia USA Inc. |
DIODE GEN PURP 250V 250MA SOD523
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 200 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock23,247 |
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250 V | 250mA | 1.25 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 200 V | 2pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | 150°C (Max) |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 60V 5A FLATPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700 µA @ 60 V
- Capacitance @ Vr, F: 2910pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: FlatPAK (5x6)
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: - |
Request a Quote |
|
60 V | 5A | 610 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700 µA @ 60 V | 2910pF @ 4V, 1MHz | Surface Mount | 8-PowerTDFN | FlatPAK (5x6) | -40°C ~ 150°C |
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Microchip Technology |
STD RECTIFIER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
DIODE GEN PURP 800V 30A DO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-247-2 (Straight Leads)
- Supplier Device Package: DO-247
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock1,356 |
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800 V | 30A | 1.1 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 800 V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
3A, 60V, DFN3820A TRENCH SKY REC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2.2A
- Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 60 V
- Capacitance @ Vr, F: 560pF @ 4V, 1MHz
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 2-VDFN
- Supplier Device Package: DFN3820A
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock42,000 |
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60 V | 2.2A | 630 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 60 V | 560pF @ 4V, 1MHz | Surface Mount, Wettable Flank | 2-VDFN | DFN3820A | -40°C ~ 175°C |
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Comchip Technology |
DIODE SCHOTTKY 100V 30A TO-277B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 770 mV @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 100 V
- Capacitance @ Vr, F: 1200pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277B
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock12,663 |
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100 V | 30A | 770 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | 1200pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C |