Page 126 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

AR4PDHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2A TO277A

Package: TO-277, 3-PowerDFN

Stock7,056
SD103R20S20PC
Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 110A DO205

Package: DO-205AC, DO-30, Stud

Stock3,232
FR6AR02
GeneSiC Semiconductor

DIODE GEN PURP REV 50V 6A DO4

Package: DO-203AA, DO-4, Stud

Stock5,456
JAN1N4454-1
Microsemi Corporation

DIODE GEN PURP 50V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock5,808
AR4PMHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCH 1KV 1.8A TO277A

Package: TO-277, 3-PowerDFN

Stock3,424
LSM160GE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 1A 60V SMBG

Package: -

Stock5,600
CDBMTS260-HF
Comchip Technology

DIODE SCHOTTKY 60V 2A SOD123S

Package: SOD-123S

Stock6,784
GS2D-LTP
Micro Commercial Co

DIODE GEN PURP 200V 2A DO214AC

Package: DO-214AC, SMA

Stock6,192
MMBD914-G3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 200MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,152
SK24-LTP
Micro Commercial Co

DIODE SCHOTTKY 40V 2A DO214AA

Package: DO-214AA, SMB

Stock29,118
VS-25FR120
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 25A DO203AA

Package: DO-203AA, DO-4, Stud

Stock5,664
S3B-13-F
Diodes Incorporated

DIODE GEN PURP 100V 3A SMC

Package: DO-214AB, SMC

Stock876,468
SBR02M30LP-7
Diodes Incorporated

DIODE SBR 30V 200MA 2DFN

Package: 2-UFDFN

Stock2,652,000
NTE5929
NTE Electronics, Inc

DIODE GEN PURP 800V 20A DO4

Package: -

Request a Quote
SD0805S020S0R2
KYOCERA AVX

SCHOTTKY DIODES

Package: -

Request a Quote
S10GCH
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 10A DO214AB

Package: -

Stock8,985
TSSE3U45H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 3A SOD123HE

Package: -

Stock204,069
SES1D
SMC Diode Solutions

DIODE GEN PURP 200V 1A SMA

Package: -

Stock22,035
SFAF1006G
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 10A ITO220AC

Package: -

Stock3,000
BR38F_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 80V 3A SMBF

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
AR4PDHM3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 2A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 77pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock7,056	200V	2A (DC)	1.6V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	10µA @ 200V	77pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SD103R20S20PC	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2KV 110A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: 2.23V @ 345A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 35mA @ 2000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AC, DO-30, Stud Supplier Device Package: DO-205AC (DO-30) Operating Temperature - Junction: -40°C ~ 125°C	Package: DO-205AC, DO-30, Stud	Stock3,232	2000V	110A	2.23V @ 345A	Standard Recovery >500ns, > 200mA (Io)	2µs	35mA @ 2000V	-	Chassis, Stud Mount	DO-205AC, DO-30, Stud	DO-205AC (DO-30)	-40°C ~ 125°C
FR6AR02	GeneSiC Semiconductor	DIODE GEN PURP REV 50V 6A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AA, DO-4, Stud	Stock5,456	50V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
JAN1N4454-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-204AH, DO-35, Axial	Stock5,808	50V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-55°C ~ 175°C
AR4PMHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCH 1KV 1.8A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.8A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock3,424	1000V	1.8A	1.9V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	10µA @ 1000V	55pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
LSM160GE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 60V SMBG Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock5,600	-	-	-	-	-	-	-	-	-	-	-
CDBMTS260-HF	Comchip Technology	DIODE SCHOTTKY 60V 2A SOD123S Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123S Supplier Device Package: SOD-123S Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123S	Stock6,784	60V	2A (DC)	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	160pF @ 4V, 1MHz	Surface Mount	SOD-123S	SOD-123S	-55°C ~ 150°C
GS2D-LTP	Micro Commercial Co	DIODE GEN PURP 200V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock6,192	200V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
MMBD914-G3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock3,152	100V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
SK24-LTP	Micro Commercial Co	DIODE SCHOTTKY 40V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 40V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AA, SMB	Stock29,118	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 40V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
VS-25FR120	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 25A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 78A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-203AA, DO-4, Stud	Stock5,664	1200V	25A	1.3V @ 78A	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 1200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
S3B-13-F	Diodes Incorporated	DIODE GEN PURP 100V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AB, SMC	Stock876,468	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
SBR02M30LP-7	Diodes Incorporated	DIODE SBR 30V 200MA 2DFN Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 610mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-UFDFN Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 175°C	Package: 2-UFDFN	Stock2,652,000	30V	200mA	610mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 30V	-	Surface Mount	2-UFDFN	X1-DFN1006-2	-65°C ~ 175°C
NTE5929	NTE Electronics, Inc	DIODE GEN PURP 800V 20A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 63 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	800 V	20A	1.23 V @ 63 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 800 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
SD0805S020S0R2	KYOCERA AVX	SCHOTTKY DIODES Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 450 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	20 V	200mA	450 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	50 µA @ 20 V	-	Surface Mount	1206 (3216 Metric)	1206	-55°C ~ 125°C
S10GCH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,985	400 V	10A	1.1 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TSSE3U45H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 3A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock204,069	45 V	3A	470 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SES1D	SMC Diode Solutions	DIODE GEN PURP 200V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 15pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock22,035	200 V	1A	920 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	15 ns	5 µA @ 200 V	15pF @ 5V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
SFAF1006G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock3,000	400 V	10A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	140pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
BR38F_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 80V 3A SMBF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 80 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	80 V	3A	800 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 80 V	120pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-65°C ~ 150°C
SB145L_AY_00001	Panjit International Inc.	DIODE SCHOTTKY 45V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	45 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 125°C
PMEG150G10ELRX	Nexperia USA Inc.	PMEG150G10ELR/SOD123W/SOD2 Diode Type: SiGe (Silicon Germanium) Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Current - Reverse Leakage @ Vr: 30 nA @ 150 V Capacitance @ Vr, F: 34pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C	Package: -	Stock27,000	150 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	15 ns	30 nA @ 150 V	34pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C
SD103CW-HE3_A-08	Vishay	SCHOTTKY DIODE SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Current - Reverse Leakage @ Vr: 5 µA @ 10 V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C	Package: -	Request a Quote	20 V	350mA	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	10 ns	5 µA @ 10 V	50pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C
V20KL45-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 5.4A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 5.4A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: 3400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock17,745	45 V	5.4A	600 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	3400pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 150°C
SRL1J	Diotec Semiconductor	DIODE SOD323P 600V 1A 150C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AD Supplier Device Package: DO-219AD Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1 µs	1 µA @ 600 V	-	Surface Mount	DO-219AD	DO-219AD	-50°C ~ 150°C
MSASC25H45K	Microchip Technology	DIODE SCHOTTKY 45V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	25A	610 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™2	ThinKey™2	-55°C ~ 150°C
SDS065J008C3-ISATH	Luminus Devices Inc.	DIODE 650V-8A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 24 µA @ 650 V Capacitance @ Vr, F: 395pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	650 V	25A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	24 µA @ 650 V	395pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2L	-55°C ~ 175°C
1N4937-BK-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -	Package: -	Request a Quote	600 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 600 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-