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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 50V
- Capacitance @ Vr, F: 200pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-277, 3-PowerDFN |
Stock5,488 |
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50V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 50V | 200pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80ns
- Current - Reverse Leakage @ Vr: 35µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-203AB, DO-5, Stud |
Stock7,840 |
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600V | 30A | 1.45V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 35µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
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Diodes Incorporated |
DIODE GEN PURP 200V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock837,816 |
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200V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: A, Axial |
Stock2,560 |
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400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 40A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-203AB, DO-5, Stud |
Stock4,176 |
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400V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 60V ITO-220A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 7.5A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 7.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock2,384 |
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60V | 7.5A | 800mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 60V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 2.5A DO201
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 2.5A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock7,248 |
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1000V | 2.5A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Comchip Technology |
DIODE SCHOTTKY 100V 1A SOD123T
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: 120pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123T
- Supplier Device Package: SOD-123HT
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123T |
Stock6,096 |
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100V | 1A (DC) | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 120pF @ 4V, 1MHz | Surface Mount | SOD-123T | SOD-123HT | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 40V 8A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: 200pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock4,592 |
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40V | 8A | 650mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 200pF @ 5V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 250MA SOD523
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3ns
- Current - Reverse Leakage @ Vr: 10µA @ 40V
- Capacitance @ Vr, F: 4pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SC-79, SOD-523 |
Stock105,228 |
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40V | 250mA (DC) | 700mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 3ns | 10µA @ 40V | 4pF @ 5V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 30MA DO35
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 30mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200nA @ 50V
- Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 125°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock5,344 |
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50V | 30mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 1.6pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1.5A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 40V
- Capacitance @ Vr, F: 170pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-76, SOD-323 |
Stock3,200 |
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40V | 1.5A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 170pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN REV 400V 300A DO205AB
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 942A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40mA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-205AB, DO-9, Stud |
Stock6,036 |
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400V | 300A | 1.4V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 400V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 200°C |
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Bourns Inc. |
DIODE SCHOTTKY 30V 1A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AC, SMA |
Stock6,688 |
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30V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 125°C |
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Micro Commercial Co |
DIODE GEN PURP 1KV 1A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA, HSMB
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-214AA, SMB |
Stock27,672 |
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1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 1000V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA, HSMB | -50°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 3A SMBFLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 70ns
- Current - Reverse Leakage @ Vr: 3µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMBflat
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: DO-214AA, SMB |
Stock60,000 |
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600V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 3µA @ 600V | - | Surface Mount | DO-214AA, SMB | SMBflat | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 100V 150MA MINMLF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 150mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 10pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: Mini MELF
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-213AA (Glass) |
Stock570,000 |
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100V | 150mA (DC) | 450mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 75V | 10pF @ 0V, 1MHz | Surface Mount | DO-213AA (Glass) | Mini MELF | -65°C ~ 125°C |
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Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323FH
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: - |
Request a Quote |
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40 V | 2A | 480 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Surface Mount | SC-90, SOD-323F | SOD-323FH | -65°C ~ 125°C |
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EIC SEMICONDUCTOR INC. |
DIODE GEN PURP 500V 1.5A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 500 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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500 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 500 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 500 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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500 V | 6A | 1.7 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 500 V | 90pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 80V 3A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 80 V
- Capacitance @ Vr, F: 140pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Stock2,340 |
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80 V | 3A | 800 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 80 V | 140pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -65°C ~ 175°C |
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Solid State Inc. |
DIODE GEN PURP REV 100V 40A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
100 V | 40A | 1.19 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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Panjit International Inc. |
DIODE GEN PURP 600V 2A SMAF-C
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 14pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAF-C
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
600 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | 14pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF-C | -55°C ~ 150°C |
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Microchip Technology |
SIGNAL OR COMPUTER DIODE
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 35V 16A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 35 V
- Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
35 V | 16A | 630 mV @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 35 V | 1400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -65°C ~ 125°C
|
Package: - |
Request a Quote |
|
40 V | 1A | 530 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 110pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -65°C ~ 125°C |
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Taiwan Semiconductor Corporation |
4A, 200V, STANDARD RECOVERY RECT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 33pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: SMPC4.6U
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock18,000 |
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200 V | 4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 33pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | SMPC4.6U | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 60V 4.7A FLATPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 4.7A
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400 µA @ 60 V
- Capacitance @ Vr, F: 2860pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: FlatPAK (5x6)
- Operating Temperature - Junction: -40°C ~ 165°C
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Package: - |
Request a Quote |
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60 V | 4.7A | 650 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 60 V | 2860pF @ 4V, 1MHz | Surface Mount | 8-PowerTDFN | FlatPAK (5x6) | -40°C ~ 165°C |