Page 139 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

VS-30WQ06FNTRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock26,448
FFPF04S60STU
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 4A TO220F

Package: TO-220-2 Full Pack

Stock4,400
MMSD71RKT1
ON Semiconductor

DIODE GEN PURP 80V 200MA SOD123

Package: SOD-123

Stock36,000
R7220605ESOO
Powerex Inc.

DIODE MODULE 600V 500A DO200AB

Package: DO-200AB, B-PUK

Stock7,216
A177P
Powerex Inc.

DIODE GEN PURP 1KV 100A DO205

Package: DO-205AA, DO-8, Stud

Stock3,392
VS-16FLR20S05
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 16A DO203AA

Package: DO-203AA, DO-4, Stud

Stock7,104
FR10G-TP
Micro Commercial Co

DIODE GEN PURP 400V DO214AB

Package: DO-214AB, SMC

Stock3,152
MURS360-E3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AB

Package: DO-214AB, SMC

Stock192,000
CDBF0245-HF
Comchip Technology

DIODE SCHOTTKY 45V 200MA 1005

Package: 1005 (2512 Metric)

Stock5,680
CR1F-100 TR
Central Semiconductor Corp

DIODE GEN PURP 1KV 1.5A DO41

Package: DO-204AL, DO-41, Axial

Stock3,536
S1FLG-M-18
Vishay Semiconductor Diodes Division

DIODE SW 400V DO-219AB

Package: DO-219AB

Stock3,408
SS2PH10-M3/84A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO220AA

Package: DO-220AA

Stock792,468
GL34B-E3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

Package: DO-213AA (Glass)

Stock55,920
ISL9R460PF2
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 4A TO220AC

Package: TO-220-2 Full Pack

Stock69,288
SBR2530
Microchip Technology

DIODE SCHOTTKY 30V 25A DO4

Package: -

Request a Quote
B260A-13-F-2477
Diodes Incorporated

DIODE

Package: -

Request a Quote
ES1ALH
Taiwan Semiconductor Corporation

35NS, 1A, 50V, SUPER FAST RECOVE

Package: -

Request a Quote
IDK12G65C5XTMA2
Infineon Technologies

DIODE SIL CARB 650V 12A TO263-2

Package: -

Stock1,584
ST3060DJF
SMC Diode Solutions

60V, 30A, PDFNWB56-8L, ULTRA LOW

Package: -

Stock9,000
GE1003
Harris Corporation

DIODE GEN PURP 150V 1A

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-30WQ06FNTRPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 3.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 60V Capacitance @ Vr, F: 145pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock26,448	60V	3.5A	610mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 60V	145pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
FFPF04S60STU	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 4A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2 Full Pack	Stock4,400	600V	4A	2.6V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
MMSD71RKT1	ON Semiconductor	DIODE GEN PURP 80V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123	Stock36,000	80V	200mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	2pF @ 0.5V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
R7220605ESOO	Powerex Inc.	DIODE MODULE 600V 500A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500A Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 50mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	Package: DO-200AB, B-PUK	Stock7,216	600V	500A	2.25V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	3µs	50mA @ 600V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
A177P	Powerex Inc.	DIODE GEN PURP 1KV 100A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.3µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 125°C	Package: DO-205AA, DO-8, Stud	Stock3,392	1000V	100A	-	Standard Recovery >500ns, > 200mA (Io)	2.3µs	-	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 125°C
VS-16FLR20S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 16A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AA, DO-4, Stud	Stock7,104	200V	16A	1.4V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	50µA @ 200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
FR10G-TP	Micro Commercial Co	DIODE GEN PURP 400V DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock3,152	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
MURS360-E3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AB, SMC	Stock192,000	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 175°C
CDBF0245-HF	Comchip Technology	DIODE SCHOTTKY 45V 200MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: 9pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	Package: 1005 (2512 Metric)	Stock5,680	45V	200mA	550mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	9pF @ 10V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
CR1F-100 TR	Central Semiconductor Corp	DIODE GEN PURP 1KV 1.5A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock3,536	1000V	1.5A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
S1FLG-M-18	Vishay Semiconductor Diodes Division	DIODE SW 400V DO-219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock3,408	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
SS2PH10-M3/84A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-220AA	Stock792,468	100V	2A	800mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 100V	65pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
GL34B-E3/98	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AA (Glass)	Stock55,920	100V	500mA	1.2V @ 500mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
ISL9R460PF2	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 4A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 2.4V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2 Full Pack	Stock69,288	600V	4A	2.4V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	22ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-55°C ~ 150°C
SBR2530	Microchip Technology	DIODE SCHOTTKY 30V 25A DO4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 30 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -	Package: -	Request a Quote	30 V	25A	1 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 30 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-
B260A-13-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 200pF @ 40V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	60 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	200pF @ 40V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
ES1ALH	Taiwan Semiconductor Corporation	35NS, 1A, 50V, SUPER FAST RECOVE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	10pF @ 4V, 1MHz	Surface Mount	SOD-123	Sub SMA	-55°C ~ 150°C
IDK12G65C5XTMA2	Infineon Technologies	DIODE SIL CARB 650V 12A TO263-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,584	650 V	12A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	-	360pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
ST3060DJF	SMC Diode Solutions	60V, 30A, PDFNWB56-8L, ULTRA LOW Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6 mA @ 60 V Capacitance @ Vr, F: 1000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PDFNWB (5x6) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock9,000	60 V	30A	770 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 60 V	1000pF @ 5V, 1MHz	Surface Mount	8-PowerVDFN	8-PDFNWB (5x6)	-55°C ~ 150°C
GE1003	Harris Corporation	DIODE GEN PURP 150V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 2 µA @ 150 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-204AE Supplier Device Package: TO-204AE Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	150 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	2 µA @ 150 V	45pF @ 4V, 1MHz	Through Hole	TO-204AE	TO-204AE	-65°C ~ 175°C
D1800N36TVFXPSA1	Infineon Technologies	DIODE GEN PURP 3.6KV 1800A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3600 V Current - Average Rectified (Io): 1800A Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 3600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	3600 V	1800A	1.32 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 3600 V	-	Clamp On	DO-200AC, K-PUK	-	-40°C ~ 160°C
1N5822US-TR-1	Microchip Technology	DIODE SCHOTTKY 40V 3A B SQ-MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 125°C
SS2PH9HM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 29V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 29 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 29 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock20,466	29 V	2A	800 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 29 V	65pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
MBRB40250TT4G	onsemi	DIODE SCHOTTKY 250V 40A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 250 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 40 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 250 µA @ 250 V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	250 V	40A	970 mV @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	250 µA @ 250 V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 150°C
CDS6857UR-1-TR	Microchip Technology	SMALL-SIGNAL SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
FS2D-LTP	Micro Commercial Co	DIODE GEN PURP 200V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	200 V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 150°C
JANS1N6621	Microchip Technology	DIODE GEN PURP 400V 2A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 500 nA @ 400 V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	500 nA @ 400 V	10pF @ 10V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
HERA806G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock3,000	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 600 V	55pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C