Page 1595 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

MBRB7H45HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY TO-263AB

Package: -

Stock6,192
CSFMT107-HF
Comchip Technology

DIODE GEN PURP 500V 1A SOD123H

Package: SOD-123H

Stock6,976
R6031025HSYA
Powerex Inc.

DIODE GEN PURP 1KV 250A DO205

Package: DO-205AB, DO-9, Stud

Stock5,152
CGRC506-G
Comchip Technology

DIODE GEN PURP 800V 5A DO214AB

Package: DO-214AB, SMC

Stock7,328
BY254P-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

Package: DO-201AD, Axial

Stock6,944
SD101A-TAP
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V DO35

Package: DO-204AH, DO-35, Axial

Stock7,680
1PS70SB10,115
Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOT323

Package: SC-70, SOT-323

Stock108,000
CCS15S40,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A CST2C

Package: 2-SMD, No Lead

Stock95,526
60S1-TP
Micro Commercial Co

DIODE GEN PURP 100V 6A DO201AD

Package: DO-201AD, Axial

Stock14,352
PMEG4030ER,115
Nexperia USA Inc.

DIODE SCHOTTKY 40V 3A SOD123W

Package: SOD-123W

Stock8,592
SD320S_S2_00001
Panjit International Inc.

DIODE SCHOTTKY 20V 3A TO252

Package: -

Request a Quote
D1381S45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 1630A

Package: -

Request a Quote
ER101_R2_00001
Panjit International Inc.

DIODE GEN PURP 100V 1A DO41

Package: -

Request a Quote
R21130
Microchip Technology

STD RECTIFIER

Package: -

Request a Quote
UF803F_T0_00001
Panjit International Inc.

DIODE GEN PURP 300V 8A ITO220AC

Package: -

Request a Quote
S3D12065G
SMC Diode Solutions

DIODE SIL CARBIDE 650V 35A D2PAK

Package: -

Stock2,034
PMEG100T50ELP-QX
Nexperia USA Inc.

DIODE SCHOTT 100V 5A SOD128/CFP5

Package: -

Stock7,245
CDS5711-1
Microchip Technology

SCHOTTKY DIODE

Package: -

Request a Quote
US2C-TP
Micro Commercial Co

Interface

Package: -

Request a Quote
UTR60
Microchip Technology

DIODE GP 600V 500MA A AXIAL

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRB7H45HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY TO-263AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock6,192	-	-	-	-	-	-	-	-	-	-	-
CSFMT107-HF	Comchip Technology	DIODE GEN PURP 500V 1A SOD123H Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 500V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123H Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123H	Stock6,976	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123H	-55°C ~ 150°C
R6031025HSYA	Powerex Inc.	DIODE GEN PURP 1KV 250A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: 2V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1µs Current - Reverse Leakage @ Vr: 50mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -45°C ~ 150°C	Package: DO-205AB, DO-9, Stud	Stock5,152	1000V	250A	2V @ 800A	Standard Recovery >500ns, > 200mA (Io)	1µs	50mA @ 1000V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-45°C ~ 150°C
CGRC506-G	Comchip Technology	DIODE GEN PURP 800V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: 150°C (Max)	Package: DO-214AB, SMC	Stock7,328	800V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	150°C (Max)
BY254P-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock6,944	800V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 800V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SD101A-TAP	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 125°C (Max)	Package: DO-204AH, DO-35, Axial	Stock7,680	60V	30mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	125°C (Max)
1PS70SB10,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 200MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3 Operating Temperature - Junction: 150°C (Max)	Package: SC-70, SOT-323	Stock108,000	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323-3	150°C (Max)
CCS15S40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A CST2C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: CST2C Operating Temperature - Junction: 125°C (Max)	Package: 2-SMD, No Lead	Stock95,526	40V	1.5A	550mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	170pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	CST2C	125°C (Max)
60S1-TP	Micro Commercial Co	DIODE GEN PURP 100V 6A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock14,352	100V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	150pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
PMEG4030ER,115	Nexperia USA Inc.	DIODE SCHOTTKY 40V 3A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: CFP3 Operating Temperature - Junction: 150°C (Max)	Package: SOD-123W	Stock8,592	40V	3A	540mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	250pF @ 1V, 1MHz	Surface Mount	SOD-123W	CFP3	150°C (Max)
SD320S_S2_00001	Panjit International Inc.	DIODE SCHOTTKY 20V 3A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	20 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-55°C ~ 125°C
D1381S45TXPSA1	Infineon Technologies	DIODE GEN PURP 4.5KV 1630A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 1630A Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 140°C	Package: -	Request a Quote	4500 V	1630A	2.6 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4500 V	-	Chassis Mount	DO-200AD	-	-40°C ~ 140°C
ER101_R2_00001	Panjit International Inc.	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 100 V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
R21130	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
UF803F_T0_00001	Panjit International Inc.	DIODE GEN PURP 300V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	300 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 300 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
S3D12065G	SMC Diode Solutions	DIODE SIL CARBIDE 650V 35A D2PAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 16 µA @ 650 V Capacitance @ Vr, F: 764pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock2,034	650 V	35A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	16 µA @ 650 V	764pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
PMEG100T50ELP-QX	Nexperia USA Inc.	DIODE SCHOTT 100V 5A SOD128/CFP5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 895 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12.5 ns Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C	Package: -	Stock7,245	100 V	5A	895 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	12.5 ns	1.75 µA @ 100 V	300pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C
CDS5711-1	Microchip Technology	SCHOTTKY DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
US2C-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	150 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 150 V	28pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 150°C
UTR60	Microchip Technology	DIODE GP 600V 500MA A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Current - Reverse Leakage @ Vr: 3 µA @ 600 V Capacitance @ Vr, F: 40pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	500mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	3 µA @ 600 V	40pF @ 0V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
V8PM10HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	100 V	8A	750 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
FFSB1265A	onsemi	DIODE SIL CARB 650V 14A D2PAK-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 14A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 665pF @ 1V, 100kHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Stock2,400	650 V	14A	1.75 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	665pF @ 1V, 100kHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)	-65°C ~ 175°C
ER1E_R1_00001	Panjit International Inc.	DIODE GEN PURP 300V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 300 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	300 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 300 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
B240AF-13-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 93pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	93pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
S8JLHE3-TP	Micro Commercial Co	DIODE GEN PURP 600V 8A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock4,635	600 V	8A	1.05 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 600 V	150pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
SK29AH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	90 V	2A	850 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 90 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
PCG30N60A4W	onsemi	DIODE SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CUD3-02-TR13-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 200V 4A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 20 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	200 V	4A	1.25 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 200 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-65°C ~ 150°C