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Infineon Technologies |
DIODE GEN PURP 1.2KV 150A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 150A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock6,128 |
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1200V | 150A (DC) | 1.6V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 500nA @ 200V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AC, DO-15, Axial |
Stock5,264 |
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200V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 25pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 200V 2A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 3µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AC, DO-15, Axial |
Stock6,480 |
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200V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 3µA @ 200V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2.1A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 2.1A
- Voltage - Forward (Vf) (Max) @ If: 780mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock304,008 |
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100V | 2.1A | 780mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 20V 5A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock3,552 |
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20V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Powerex Inc. |
DIODE DISC RBK 2500A 6200V
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock3,552 |
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- | - | - | - | - | - | - | - | - | - | - |
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Powerex Inc. |
DIODE GEN PURP 400V 100A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 24mA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock6,320 |
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400V | 100A | 1.5V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 24mA @ 400V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 3A D5B
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, B |
Stock2,912 |
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200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1.4KV DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 7mA @ 1400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock7,504 |
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1400V | 100A | 1.5V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 7mA @ 1400V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE STD REC 80A DO-5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 80A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 220A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -55°C ~ 180°C
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Package: DO-203AB, DO-5, Stud |
Stock2,880 |
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400V | 80A | 1.4V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock7,008 |
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200V | 2A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-201AD, Axial |
Stock3,536 |
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20V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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STMicroelectronics |
AUTOMOTIVE ULTRAFAST RECTIFIER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 32ns
- Current - Reverse Leakage @ Vr: 500nA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: SOD-123F |
Stock2,320 |
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200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 500nA @ 200V | - | Surface Mount | SOD-123F | SOD-123F | -40°C ~ 175°C |
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Comchip Technology |
DIODE SCHOTTKY 30V 200MA 1005
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 500nA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 1005 (2512 Metric)
- Supplier Device Package: 1005/SOD-323F
- Operating Temperature - Junction: 125°C (Max)
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Package: 1005 (2512 Metric) |
Stock2,672 |
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30V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | 125°C (Max) |
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TSC America Inc. |
DIODE, ULTRA FAST, 1A, 150V, 15N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15ns
- Current - Reverse Leakage @ Vr: 1µA @ 150V
- Capacitance @ Vr, F: 16pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AC, SMA |
Stock6,704 |
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150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 1µA @ 150V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, FAST, 1A, 400V, 150NS, AE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock2,672 |
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400V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1.6KV 1A SOD57
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 3.4V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 1600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: SOD-57, Axial
- Supplier Device Package: SOD-57
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: SOD-57, Axial |
Stock216,144 |
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1600V | 1A | 3.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Diotec Semiconductor |
IC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: - |
Request a Quote |
|
400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | - | Surface Mount | SOD-123F | SOD-123FL | -50°C ~ 150°C |
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SMC Diode Solutions |
40V, 2A, SO-D-123FL, DIODE SCHO
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock8,700 |
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40 V | 2A | 550 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | 80pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
15A, 60V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 60 V
- Capacitance @ Vr, F: 576pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: ThinDPAK
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock13,500 |
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60 V | 15A | 750 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | 576pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | ThinDPAK | -55°C ~ 150°C |
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Microchip Technology |
DIODE GP REV 100V 300A DO205AB
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 75 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB (DO-9)
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
100 V | 300A | 1.25 V @ 1000 A | Standard Recovery >500ns, > 200mA (Io) | - | 75 µA @ 100 V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB (DO-9) | -65°C ~ 200°C |
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Infineon Technologies |
DIODE GEN PURP 1.6KV 443A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 443A
- Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 6.2 µs
- Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -25°C ~ 180°C
|
Package: - |
Request a Quote |
|
1600 V | 443A | 2.25 V @ 1200 A | Standard Recovery >500ns, > 200mA (Io) | 6.2 µs | 10 mA @ 1600 V | - | Clamp On | DO-200AA, A-PUK | - | -25°C ~ 180°C |
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Infineon Technologies |
DIODE GENERAL PURPOSE E-EUPEC-0
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
10A, 100V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: 260pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: ThinDPAK
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock13,500 |
|
100 V | 10A | 830 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 100 V | 260pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | ThinDPAK | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 100V 40A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5 µs
- Current - Reverse Leakage @ Vr: 40 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5 (DO-203AB)
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
100 V | 40A | 1.19 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 40 µA @ 100 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -65°C ~ 200°C |
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Nexperia USA Inc. |
PMEG6002EB-Q/SOD523/SC-79
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 60 V
- Capacitance @ Vr, F: 14pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: 150°C
|
Package: - |
Request a Quote |
|
60 V | 200mA | 600 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 µA @ 60 V | 14pF @ 1V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock7,500 |
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200 V | 4A | 1 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 8A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock8,340 |
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100 V | 8A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |