Page 1643 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

R6101030XXYZ
Powerex Inc.

DIODE GEN PURP 1KV 300A DO205

Package: DO-205AB, DO-9, Stud

Stock3,376
BY229-600,127
NXP

DIODE GEN PURP 500V 8A TO220AC

Package: TO-220-2

Stock6,656
FYPF0545STU
Fairchild/ON Semiconductor

DIODE SCHOTTKY 45V 5A TO220F

Package: TO-220-2 Full Pack

Stock5,792
LSM115J
Microsemi Corporation

DIODE SCHOTTKY 15V 1A DO214BA

Package: DO-214AA, SMB

Stock600,000
18TQ045S
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 18A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock9,264
A170PE
Powerex Inc.

DIODE GEN PURP 1.5KV 100A DO205

Package: DO-205AA, DO-8, Stud

Stock3,552
JAN1N3646
Microsemi Corporation

DIODE GP 1.75KV 250MA AXIAL

Package: S, Axial

Stock7,696
NTS10100EMFST3G
ON Semiconductor

DIODE SCHOTTKY 100V 10A 5DFN

Package: 8-PowerTDFN, 5 Leads

Stock2,624
MUR420 B0G
TSC America Inc.

DIODE, ULTRA FAST, 4A, 200V, 25N

Package: DO-201AD, Axial

Stock7,984
U3C-E3/57T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO214AB

Package: DO-214AB, SMC

Stock142,800
SS36-M3/9AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 60V DO-214AB

Package: DO-214AB, SMC

Stock5,984
MURS140-M3/52T
Vishay Semiconductor Diodes Division

DIODE RECT 1A 400V 50NS DO-214AA

Package: DO-214AA, SMB

Stock3,488
S1G-M3/61T
Vishay Semiconductor Diodes Division

DIODE GPP 1A 400V DO-214AC

Package: DO-214AC, SMA

Stock174,000
ESH1GM RSG
TSC America Inc.

DIODE, ULTRA FAST, 1A, 400V, 25N

Package: 2-SMD, Flat Lead

Stock2,064
PMEG3005ELD,315
Nexperia USA Inc.

DIODE SCHOTTKY 30V 500MA SOD882D

Package: 2-XDFN

Stock4,544
1N6392
Microsemi Corporation

DIODE SCHOTTKY 45V 54A DO5

Package: DO-203AB, DO-5, Stud

Stock6,608
S110FP
Fairchild/ON Semiconductor

DIODE SCHOTTKY 100V 1A SOD123HE

Package: SOD-123H

Stock7,168
PMEG2005ET,215
Nexperia USA Inc.

DIODE SCHOTTKY 20V 500MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock155,694
1N3494
Solid State Inc.

DIODE GP 300V 25A PRESS FIT

Package: -

Request a Quote
MUR6040B-BP
Micro Commercial Co

DIODE GEN PURP 400V 60A TO247AD

Package: -

Stock9,666

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
R6101030XXYZ	Powerex Inc.	DIODE GEN PURP 1KV 300A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 13µs Current - Reverse Leakage @ Vr: 50mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-205AB, DO-9, Stud	Stock3,376	1000V	300A	1.4V @ 800A	Standard Recovery >500ns, > 200mA (Io)	13µs	50mA @ 1000V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 190°C
BY229-600,127	NXP	DIODE GEN PURP 500V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 400µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	Package: TO-220-2	Stock6,656	500V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	400µA @ 500V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
FYPF0545STU	Fairchild/ON Semiconductor	DIODE SCHOTTKY 45V 5A TO220F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2 Full Pack	Stock5,792	45V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
LSM115J	Microsemi Corporation	DIODE SCHOTTKY 15V 1A DO214BA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 15V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock600,000	15V	1A	220mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 15V	-	Surface Mount	DO-214AA, SMB	DO-214BA	-55°C ~ 150°C
18TQ045S	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 18A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: 600mV @ 18A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock9,264	45V	18A	600mV @ 18A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.5mA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
A170PE	Powerex Inc.	DIODE GEN PURP 1.5KV 100A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 1500V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock3,552	1500V	100A	1.3V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 1500V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
JAN1N3646	Microsemi Corporation	DIODE GP 1.75KV 250MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1750V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1750V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: S, Axial Supplier Device Package: S, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: S, Axial	Stock7,696	1750V	250mA	5V @ 250mA	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1750V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
NTS10100EMFST3G	ON Semiconductor	DIODE SCHOTTKY 100V 10A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 720mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C	Package: 8-PowerTDFN, 5 Leads	Stock2,624	100V	10A	720mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	70µA @ 100V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 150°C
MUR420 B0G	TSC America Inc.	DIODE, ULTRA FAST, 4A, 200V, 25N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 890mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-201AD, Axial	Stock7,984	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
U3C-E3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 2A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock142,800	150V	2A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SS36-M3/9AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 3A 60V DO-214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock5,984	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
MURS140-M3/52T	Vishay Semiconductor Diodes Division	DIODE RECT 1A 400V 50NS DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AA, SMB	Stock3,488	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 400V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 175°C
S1G-M3/61T	Vishay Semiconductor Diodes Division	DIODE GPP 1A 400V DO-214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock174,000	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ESH1GM RSG	TSC America Inc.	DIODE, ULTRA FAST, 1A, 400V, 25N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 3pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: 2-SMD, Flat Lead	Stock2,064	400V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 400V	3pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
PMEG3005ELD,315	Nexperia USA Inc.	DIODE SCHOTTKY 30V 500MA SOD882D Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 30pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: 2-DFN1006D (0.6x1.0) Operating Temperature - Junction: 150°C (Max)	Package: 2-XDFN	Stock4,544	30V	500mA	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	500µA @ 30V	30pF @ 1V, 1MHz	Surface Mount	2-XDFN	2-DFN1006D (0.6x1.0)	150°C (Max)
1N6392	Microsemi Corporation	DIODE SCHOTTKY 45V 54A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 54A Voltage - Forward (Vf) (Max) @ If: 820mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: 3000pF @ 5V, 1MHz Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-203AB, DO-5, Stud	Stock6,608	45V	54A	820mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	3000pF @ 5V, 1MHz	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 175°C
S110FP	Fairchild/ON Semiconductor	DIODE SCHOTTKY 100V 1A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 100V Capacitance @ Vr, F: 32pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123H	Stock7,168	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	32pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
PMEG2005ET,215	Nexperia USA Inc.	DIODE SCHOTTKY 20V 500MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 390mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: 80pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23) Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock155,694	20V	500mA (DC)	390mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	80pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
1N3494	Solid State Inc.	DIODE GP 300V 25A PRESS FIT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 57 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 300 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: PRESS FIT Supplier Device Package: Press Fit Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	300 V	25A	1.7 V @ 57 A	Standard Recovery >500ns, > 200mA (Io)	-	1 mA @ 300 V	-	Chassis Mount	PRESS FIT	Press Fit	-65°C ~ 175°C
MUR6040B-BP	Micro Commercial Co	DIODE GEN PURP 400V 60A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock9,666	400 V	60A	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 400 V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 150°C
TUAU10DH	Taiwan Semiconductor Corporation	50NS, 10A, 200V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 135pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock17,955	200 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	135pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 175°C
TUAU10GH	Taiwan Semiconductor Corporation	50NS, 10A, 400V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 135pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock18,000	400 V	10A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	135pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 175°C
JANS1N5811URS-TR	Microchip Technology	UFR,FRR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 150 V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
FFSH4065BDN-F085	onsemi	DIODE SIL CARB 650V 20A TO247-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 866pF @ 1V, 100kHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock675	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Through Hole	TO-247-3	TO-247-3	-55°C ~ 175°C
MBR1060F-BP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	60 V	10A	750 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Through Hole	TO-220-2 Isolated Tab	ITO-220AC	-50°C ~ 150°C
1N459A_L99Z	onsemi	DIODE GEN PURP 200V 500MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 nA @ 175 V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: -	Request a Quote	200 V	500mA	1 V @ 100 mA	Standard Recovery >500ns, > 200mA (Io)	-	25 nA @ 175 V	6pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N645-TR	Microchip Technology	DIODE GP REV 225V 400MA DO35 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 225 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 225 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	225 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	200 nA @ 225 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C
JAN1N6080	Semtech Corporation	DIODE GEN PURP 100V 5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 230pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	100 V	5A	970 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 100 V	230pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 150°C