Page 1645 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

RFN5B2STL
Rohm Semiconductor

DIODE GEN PURPOSE CPD

Package: -

Stock67,200
R6011425XXYA
Powerex Inc.

DIODE GEN PURP 1.4KV 250A DO205

Package: DO-205AB, DO-9, Stud

Stock3,664
R5020410RSWA
Powerex Inc.

DIODE GEN PURP 400V 100A DO205AA

Package: DO-205AA, DO-8, Stud

Stock3,904
VS-12F100M
Vishay Semiconductor Diodes Division

DIODE STD REC 12A DO-203AA

Package: DO-203AA, DO-4, Stud

Stock5,456
GPP60B-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 6A P600

Package: P600, Axial

Stock5,360
SF5402-TAP
Vishay Semiconductor Diodes Division

DIODE AVAL 3A 200V SOD-64

Package: SOD-64, Axial

Stock3,344
SBRT20M80SP5-13D
Diodes Incorporated

DIODE SBR 80V 20A POWERDI5

Package: PowerDI? 5

Stock3,392
RL 2Z
Sanken

DIODE GEN PURP 200V 2A AXIAL

Package: Axial

Stock2,784
AL01ZV
Sanken

DIODE GEN PURP 200V 1A AXIAL

Package: Axial

Stock3,632
FR301G R0G
TSC America Inc.

DIODE, FAST, 3A, 50V, 150NS, DO-

Package: DO-201AD, Axial

Stock6,656
PR1003G-T
Diodes Incorporated

DIODE GEN PURP 200V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock6,688
BAS20-HE3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 200MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,120
FFB10UP20STM
Fairchild/ON Semiconductor

DIODE GEN PURP 200V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,840
1N916B
Fairchild/ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock54,888
CMR1U-06FL TR13
Central Semiconductor Corp

DIODE GEN PURP 600V 1A SMB

Package: DO-214AA, SMB

Stock3,360
B560C-13-F
Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

Package: DO-214AB, SMC

Stock1,912,056
FM4000GP-TP
Micro Commercial Co

Interface

Package: -

Request a Quote
GD10MPS12H
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 10A TO247-2

Package: -

Stock8,418
CDBWL0140L-HF
Comchip Technology

DIODE SCHOTTKY 40V 100MA 01005

Package: -

Request a Quote
W1263YC200
IXYS

DIODE GEN PURP 2KV 1263A W2

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RFN5B2STL	Rohm Semiconductor	DIODE GEN PURPOSE CPD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock67,200	-	-	-	-	-	-	-	-	-	-	-
R6011425XXYA	Powerex Inc.	DIODE GEN PURP 1.4KV 250A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 11µs Current - Reverse Leakage @ Vr: 50mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-205AB, DO-9, Stud	Stock3,664	1400V	250A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	11µs	50mA @ 1400V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 175°C
R5020410RSWA	Powerex Inc.	DIODE GEN PURP 400V 100A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 45mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 150°C	Package: DO-205AA, DO-8, Stud	Stock3,904	400V	100A	2.7V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	45mA @ 400V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 150°C
VS-12F100M	Vishay Semiconductor Diodes Division	DIODE STD REC 12A DO-203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.47V @ 600A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -40°C ~ 180°C	Package: DO-203AA, DO-4, Stud	Stock5,456	1000V	12A	1.47V @ 600A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-40°C ~ 180°C
GPP60B-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.5µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 175°C	Package: P600, Axial	Stock5,360	100V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	5.5µs	5µA @ 100V	-	Through Hole	P600, Axial	P600	-55°C ~ 175°C
SF5402-TAP	Vishay Semiconductor Diodes Division	DIODE AVAL 3A 200V SOD-64 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-64, Axial	Stock3,344	200V	3A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
SBRT20M80SP5-13D	Diodes Incorporated	DIODE SBR 80V 20A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 660mV @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	Package: PowerDI? 5	Stock3,392	80V	20A	660mV @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	200µA @ 80V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
RL 2Z	Sanken	DIODE GEN PURP 200V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock2,784	200V	2A	980mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
AL01ZV	Sanken	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock3,632	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
FR301G R0G	TSC America Inc.	DIODE, FAST, 3A, 50V, 150NS, DO- Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock6,656	50V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
PR1003G-T	Diodes Incorporated	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock6,688	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
BAS20-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-236-3, SC-59, SOT-23-3	Stock3,120	150V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
FFB10UP20STM	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 10A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,840	200V	10A	1.15V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	100µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 150°C
1N916B	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 20mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AH, DO-35, Axial	Stock54,888	100V	200mA	1V @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
CMR1U-06FL TR13	Central Semiconductor Corp	DIODE GEN PURP 600V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock3,360	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	1µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
B560C-13-F	Diodes Incorporated	DIODE SCHOTTKY 60V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock1,912,056	60V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	300pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
FM4000GP-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 5 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: 5 µA @ 4000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	4000 V	500mA	5 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 4000 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
GD10MPS12H	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 10A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C	Package: -	Stock8,418	1200 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-247-2	TO-247-2	175°C
CDBWL0140L-HF	Comchip Technology	DIODE SCHOTTKY 40V 100MA 01005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 460 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 40 V Capacitance @ Vr, F: 28pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 01005 (0402 Metric) Supplier Device Package: 1005 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	40 V	100mA	460 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	30 µA @ 40 V	28pF @ 0V, 1MHz	Surface Mount	01005 (0402 Metric)	1005	-55°C ~ 125°C
W1263YC200	IXYS	DIODE GEN PURP 2KV 1263A W2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000 V Current - Average Rectified (Io): 1263A Voltage - Forward (Vf) (Max) @ If: 2.12 V @ 3770 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 17 µs Current - Reverse Leakage @ Vr: 30 mA @ 2000 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, A-PUK Supplier Device Package: W2 Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	2000 V	1263A	2.12 V @ 3770 A	Standard Recovery >500ns, > 200mA (Io)	17 µs	30 mA @ 2000 V	-	Clamp On	DO-200AB, A-PUK	W2	-40°C ~ 175°C
ER1004_T0_00001	Panjit International Inc.	DIODE GEN PURP 400V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 62pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock5,598	400 V	10A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 400 V	62pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SE8D30D-M3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 3A SLIMSMAW Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock39,300	200 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	10 µA @ 200 V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-55°C ~ 175°C
FR102T-R	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	100 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	50pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
JANS1N6872UTK2	Microchip Technology	DIODE GEN PURP 400MA THINKEY2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	-	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 175°C
VS-65EPF06L-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 65A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 65A Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 65 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	600 V	65A	1.32 V @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
CMOD6263-BK-PBFREE	Central Semiconductor Corp	DIODE SCHOTTKY 70V 15MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 15mA Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	70 V	15mA	410 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	200 nA @ 50 V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-65°C ~ 150°C
SM4933A-TP	Micro Commercial Co	DIODE GEN PURP 50V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 50 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SR106H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	60 V	1A	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C