Page 1685 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

BYS11-90HE3/TR3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1.5A DO214AC

Package: DO-214AC, SMA

Stock2,960
EGP30F-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 3A GP20

Package: DO-201AA, DO-27, Axial

Stock5,776
SGL41-40-E3/1
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO213AB

Package: DO-213AB, MELF

Stock4,832
1N2059
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 250A DO205AB

Package: DO-205AB, DO-9, Stud

Stock2,064
JANTX1N3070-1
Microsemi Corporation

DIODE GEN PURP 175V 100MA DO7

Package: DO-204AA, DO-7, Axial

Stock3,664
SBR4U130LP-7
Diodes Incorporated

DIODE SBR 130V 4A 8DFN

Package: 8-PowerUDFN

Stock307,920
BYW56-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 2A SOD57

Package: SOD-57, Axial

Stock6,048
U3B-M3/57T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO214AB

Package: DO-214AB, SMC

Stock2,160
GP10-4003E-E3/53
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock2,512
UG2D B0G
TSC America Inc.

DIODE, ULTRA FAST, 2A, 200V, 15N

Package: DO-204AC, DO-15, Axial

Stock5,472
SF12GHR1G
TSC America Inc.

DIODE, SUPER FAST, 1A, 100V, 35N

Package: DO-204AL, DO-41, Axial

Stock7,392
SS115L RHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Package: DO-219AB

Stock3,536
S1DLHMTG
TSC America Inc.

DIODE, 1A, 200V, AEC-Q101, SUB S

Package: DO-219AB

Stock3,696
FR101G R0G
TSC America Inc.

DIODE, FAST, 1A, 50V, 150NS, DO-

Package: DO-204AL, DO-41, Axial

Stock5,152
STTH1R06UFY
STMicroelectronics

DIODE ULT FAST 600V 1A SMBFLAT

Package: DO-214AA, SMB

Stock60,000
VS-HFA06TB120SPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,368
STTH8R06FP
STMicroelectronics

DIODE GEN PURP 600V 8A TO220FP

Package: TO-220-2 Full Pack

Stock108,264
SK104-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 10A DO214AB

Package: DO-214AB, SMC

Stock78,000
GR1J
Good-Ark Semiconductor

RECTIFIER, FAST RECOVERY, 1A, 60

Package: -

Stock44,550
MBR20100ULPS-TP
Micro Commercial Co

DIODE SCHOTTKY 100V 20A TO277-3

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BYS11-90HE3/TR3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 1.5A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock2,960	90V	1.5A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
EGP30F-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 3A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-201AA, DO-27, Axial	Stock5,776	300V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	-	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
SGL41-40-E3/1	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-213AB, MELF	Stock4,832	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 125°C
1N2059	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 250A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 250A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 17mA @ 300V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-205AB, DO-9, Stud	Stock2,064	300V	250A	1.25V @ 250A	Standard Recovery >500ns, > 200mA (Io)	-	17mA @ 300V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
JANTX1N3070-1	Microsemi Corporation	DIODE GEN PURP 175V 100MA DO7 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 175V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 175V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AA, DO-7, Axial	Stock3,664	175V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 175V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 175°C
SBR4U130LP-7	Diodes Incorporated	DIODE SBR 130V 4A 8DFN Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 130V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 750mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 130V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8 Operating Temperature - Junction: -65°C ~ 150°C	Package: 8-PowerUDFN	Stock307,920	130V	4A	750mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 130V	-	Surface Mount	8-PowerUDFN	U-DFN3030-8	-65°C ~ 150°C
BYW56-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 2A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-57, Axial	Stock6,048	1000V	2A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 1000V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
U3B-M3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock2,160	100V	2A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 100V	25pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
GP10-4003E-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock2,512	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 200V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
UG2D B0G	TSC America Inc.	DIODE, ULTRA FAST, 2A, 200V, 15N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock5,472	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF12GHR1G	TSC America Inc.	DIODE, SUPER FAST, 1A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock7,392	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS115L RHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock3,536	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1DLHMTG	TSC America Inc.	DIODE, 1A, 200V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock3,696	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
FR101G R0G	TSC America Inc.	DIODE, FAST, 1A, 50V, 150NS, DO- Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock5,152	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
STTH1R06UFY	STMicroelectronics	DIODE ULT FAST 600V 1A SMBFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMBflat Operating Temperature - Junction: -40°C ~ 175°C	Package: DO-214AA, SMB	Stock60,000	600V	1A	1.9V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	1µA @ 600V	-	Surface Mount	DO-214AA, SMB	SMBflat	-40°C ~ 175°C
VS-HFA06TB120SPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 6A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 3V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 5µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,368	1200V	6A (DC)	3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	5µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
STTH8R06FP	STMicroelectronics	DIODE GEN PURP 600V 8A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.9V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FPAC Operating Temperature - Junction: 175°C (Max)	Package: TO-220-2 Full Pack	Stock108,264	600V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	30µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220FPAC	175°C (Max)
SK104-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 10A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 650mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 500pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AB, SMC	Stock78,000	40V	10A	650mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	500pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
GR1J	Good-Ark Semiconductor	RECTIFIER, FAST RECOVERY, 1A, 60 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 7.6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock44,550	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	7.6pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
MBR20100ULPS-TP	Micro Commercial Co	DIODE SCHOTTKY 100V 20A TO277-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	20A	660 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 150°C
SDM1U30CP3-7	Diodes Incorporated	DIODE SCHOTT 30V 1A X3-DSN1006-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 350 µA @ 30 V Capacitance @ Vr, F: 69pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: X3-DSN1006-2 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock11,190	30 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 30 V	69pF @ 1V, 1MHz	Surface Mount	2-XDFN	X3-DSN1006-2	-55°C ~ 150°C
FR107GP-TP	Micro Commercial Co	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
BAS16-HF	Comchip Technology	DIODE GEN PURP 75V 150MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C	Package: -	Stock4,920	75 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	6 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C
V5NL63-M3-I	Vishay General Semiconductor - Diodes Division	5A, 60V, DFN3820A TRENCH SKY REC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2.4A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 60 V Capacitance @ Vr, F: 840pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock41,820	60 V	2.4A	580 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 60 V	840pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 150°C
VS-15ETH06-1-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 15A TO262AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	15A	2.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	-	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262AA	-65°C ~ 175°C
BYW74-L36	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 400V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	400 V	3A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 400 V	-	-	-	-	-55°C ~ 175°C
MBRS340T3H	onsemi	DIODE SCHOTTKY 40V 4A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	40 V	4A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 40 V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
XBS506V1AR-G	Torex Semiconductor Ltd	DIODE SCHOTTKY 60V 5A SMBT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221BA, SMB Flat Leads Exposed Pad Supplier Device Package: SMBT Operating Temperature - Junction: 150°C	Package: -	Request a Quote	60 V	5A	680 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 60 V	-	Surface Mount	DO-221BA, SMB Flat Leads Exposed Pad	SMBT	150°C