Page 1686 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

BAS 3020B E6327
Infineon Technologies

DIODE SCHOTTKY 30V 2A SOT363-6

Package: 6-VSSOP, SC-88, SOT-363

Stock5,840
RS2AHE3/5BT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1.5A DO214AA

Package: DO-214AA, SMB

Stock7,808
VS-40HF100M
Vishay Semiconductor Diodes Division

DIODE STD REC 40A DO5

Package: DO-203AB, DO-5, Stud

Stock4,048
SFA801GHC0G
TSC America Inc.

DIODE, SUPER FAST, 8A, 50V, 35NS

Package: TO-220-2

Stock3,280
SBR10E45P5-7D
Diodes Incorporated

DIODE SBR 45V 10A POWERDI5

Package: PowerDI? 5

Stock3,664
CMR1-02 BK
Central Semiconductor Corp

DIODE GEN PURP 200V 1A SMB

Package: DO-214AA, SMB

Stock3,088
SSA33L-M3/61T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 30V DO-214AC

Package: DO-214AC, SMA

Stock15,168
SK12BHR5G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

Package: DO-214AA, SMB

Stock2,544
HER205G A0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 400V,

Package: DO-204AC, DO-15, Axial

Stock2,464
2A04GHR0G
TSC America Inc.

DIODE, 2A, 400V, AEC-Q101, DO-15

Package: DO-204AC, DO-15, Axial

Stock7,008
CDSW20-G
Comchip Technology

DIODE GEN PURP 150V 200MA SOD123

Package: SOD-123

Stock6,464
19TQ015STR
SMC Diode Solutions

DIODE SCHOTTKY 15V D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,432
FS8G
Fairchild/ON Semiconductor

DIODE GEN PURP 400V 8A TO277-3

Package: TO-277, 3-PowerDFN

Stock7,200
CMMSH1-40L
Central Semiconductor Corp

SCHOTTKY DIODE 40V 1.0A SOD-123F

Package: SOD-123F

Stock26,436
STPS2H100ZFY
STMicroelectronics

DIODE SCHOTTKY 100V 2A SOD123F

Package: SOD-123F

Stock44,604
FJH1101
Fairchild/ON Semiconductor

DIODE GEN PURP 15V 150MA DO35

Package: DO-204AH, DO-35, Axial

Stock190,800
PDS540-13
Diodes Incorporated

DIODE SCHOTTKY 40V 5A POWERDI5

Package: PowerDI? 5

Stock1,543,536
MBR8H120PC_R2_00001
Panjit International Inc.

120V, SCHOTTKY, TO-277C, 8A

Package: -

Stock30,000
US2JWF-HF
Comchip Technology

DIODE GEN PURP 600V 2A SOD123F

Package: -

Request a Quote
S3B_R1_00001
Panjit International Inc.

DIODE GEN PURP 100V 3A SMC

Package: -

Stock2,400

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAS 3020B E6327	Infineon Technologies	DIODE SCHOTTKY 30V 2A SOT363-6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Operating Temperature - Junction: -55°C ~ 125°C	Package: 6-VSSOP, SC-88, SOT-363	Stock5,840	30V	2A (DC)	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	70pF @ 1V, 1MHz	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6	-55°C ~ 125°C
RS2AHE3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock7,808	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
VS-40HF100M	Vishay Semiconductor Diodes Division	DIODE STD REC 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-203AB, DO-5, Stud	Stock4,048	1000V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 190°C
SFA801GHC0G	TSC America Inc.	DIODE, SUPER FAST, 8A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock3,280	50V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SBR10E45P5-7D	Diodes Incorporated	DIODE SBR 45V 10A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 280µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	Package: PowerDI? 5	Stock3,664	45V	10A	470mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	280µA @ 45V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
CMR1-02 BK	Central Semiconductor Corp	DIODE GEN PURP 200V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock3,088	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
SSA33L-M3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 3A 30V DO-214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AC, SMA	Stock15,168	30V	3A	450mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
SK12BHR5G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AA, SMB	Stock2,544	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
HER205G A0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 2A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock2,464	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A04GHR0G	TSC America Inc.	DIODE, 2A, 400V, AEC-Q101, DO-15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock7,008	400V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
CDSW20-G	Comchip Technology	DIODE GEN PURP 150V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -	Package: SOD-123	Stock6,464	150V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-
19TQ015STR	SMC Diode Solutions	DIODE SCHOTTKY 15V D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 360mV @ 19A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10.5mA @ 15V Capacitance @ Vr, F: 2500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 100°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,432	15V	-	360mV @ 19A	Fast Recovery =< 500ns, > 200mA (Io)	-	10.5mA @ 15V	2500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 100°C
FS8G	Fairchild/ON Semiconductor	DIODE GEN PURP 400V 8A TO277-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 118pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock7,200	400V	8A	1.1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	3.37µs	5µA @ 400V	118pF @ 0V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 150°C
CMMSH1-40L	Central Semiconductor Corp	SCHOTTKY DIODE 40V 1.0A SOD-123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 70pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C	Package: SOD-123F	Stock26,436	40V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	70pF @ 10V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 125°C
STPS2H100ZFY	STMicroelectronics	DIODE SCHOTTKY 100V 2A SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 960mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -40°C ~ 175°C	Package: SOD-123F	Stock44,604	100V	2A	960mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 100V	-	Surface Mount	SOD-123F	SOD-123F	-40°C ~ 175°C
FJH1101	Fairchild/ON Semiconductor	DIODE GEN PURP 15V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 150mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15pA @ 15V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock190,800	15V	150mA (DC)	1.1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	15pA @ 15V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
PDS540-13	Diodes Incorporated	DIODE SCHOTTKY 40V 5A POWERDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 150°C	Package: PowerDI? 5	Stock1,543,536	40V	5A	520mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 40V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 150°C
MBR8H120PC_R2_00001	Panjit International Inc.	120V, SCHOTTKY, TO-277C, 8A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 870 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 120 V Capacitance @ Vr, F: 134pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277C Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock30,000	120 V	8A	870 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 120 V	134pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277C	-55°C ~ 175°C
US2JWF-HF	Comchip Technology	DIODE GEN PURP 600V 2A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	2A	1.68 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	-	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
S3B_R1_00001	Panjit International Inc.	DIODE GEN PURP 100V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 53pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock2,400	100 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 100 V	53pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
S3DH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock9,000	200 V	3A	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 200 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S37140	Microchip Technology	DIODE GEN PURP 1.4KV 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400 V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 85 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 1400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	1400 V	85A	1.15 V @ 85 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 1400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
EGL41FHE3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 300V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 14pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	300 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 300 V	14pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
RS1JB-13-G	Diodes Incorporated	DIODE GENERAL PURPOSE SMB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
FR604G	SMC Diode Solutions	DIODE GEN PURP 400V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 280 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	400 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 280 V	150pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-65°C ~ 150°C
BAV19W-G	Taiwan Semiconductor Corporation	SOD-123, 120V, 0.2A, SWITCHING D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 100 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	100 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 100 V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
S4D02120E	SMC Diode Solutions	DIODE SIL CARBIDE 1.2KV 2A DPAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: 116pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock14,004	1200 V	2A	1.8 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	116pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 175°C
PMEG200G10ELR-QX	Nexperia USA Inc.	DIODE GEN PURP 200V 1A SOD123W Diode Type: SiGe (Silicon Germanium) Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Current - Reverse Leakage @ Vr: 30 nA @ 200 V Capacitance @ Vr, F: 29pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C	Package: -	Stock6,669	200 V	1A	880 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	34 ns	30 nA @ 200 V	29pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C