Page 1709 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

JANTXV1N6662US
Microsemi Corporation

DIODE GEN PURP 400V 500MA D5A

Package: SQ-MELF, A

Stock3,632
RGP30BHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

Package: DO-201AD, Axial

Stock3,680
A180P
Powerex Inc.

DIODE GEN PURP 1KV 150A DO205

Package: DO-205AA, DO-8, Stud

Stock3,264
S70BR
GeneSiC Semiconductor

DIODE GEN PURP REV 100V 70A DO5

Package: DO-203AB, DO-5, Stud

Stock2,240
VS-8EWX06FNTRL-M3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 600V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,384
VS-6EWX06FNTRRHM3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 600V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,672
1N5400G R0G
TSC America Inc.

DIODE, 3A, 50V, DO-201AD

Package: DO-201AD, Axial

Stock5,440
US1MHR3G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 1000V

Package: DO-214AC, SMA

Stock4,272
SS25L MHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 5

Package: DO-219AB

Stock6,368
FR101G A0G
TSC America Inc.

DIODE, FAST, 1A, 50V, 150NS, DO-

Package: DO-204AL, DO-41, Axial

Stock6,560
SL44-E3/57T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 4A DO214AB

Package: DO-214AB, SMC

Stock313,176
VS-1N1204A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 12A DO203AA

Package: DO-203AA, DO-4, Stud

Stock5,504
MBR1H100SFT3G
ON Semiconductor

DIODE SCHOTTKY 100V 1A SOD123FL

Package: SOD-123F

Stock2,431,896
SBRT25M60SLP-13
Diodes Incorporated

DIODE SBR 60V 25A POWERDI5060-8

Package: 8-PowerTDFN

Stock28,380
1SS307(TE85L,F)
Toshiba Semiconductor and Storage

DIODE GEN PURP 30V 100MA SMINI

Package: TO-236-3, SC-59, SOT-23-3

Stock85,548
RB520S-30EP-TP
Micro Commercial Co

DIODE SCHOTTKY 30V 100MA 0201B

Package: 0201 (0603 Metric)

Stock3,504
B360-13-F
Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMC

Package: DO-214AB, SMC

Stock1,649,736
P600M
Diotec Semiconductor

DIODE STD D8X7.5 1000V 6A

Package: -

Stock20,958
V20K170-M3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 170V 3.2A FLATPAK

Package: -

Request a Quote
EM516GP-TP
Micro Commercial Co

DIODE GEN PURP 1.8KV 1A DO41

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTXV1N6662US	Microsemi Corporation	DIODE GEN PURP 400V 500MA D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50nA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	Package: SQ-MELF, A	Stock3,632	400V	500mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
RGP30BHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AD, Axial	Stock3,680	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
A180P	Powerex Inc.	DIODE GEN PURP 1KV 150A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock3,264	1000V	150A	1.3V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 1000V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
S70BR	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C	Package: DO-203AB, DO-5, Stud	Stock2,240	100V	70A	1.1V @ 70A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 180°C
VS-8EWX06FNTRL-M3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 600V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 17ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,384	600V	8A	3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	17ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
VS-6EWX06FNTRRHM3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 600V 6A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 3.1V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,672	600V	6A	3.1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	21ns	20µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
1N5400G R0G	TSC America Inc.	DIODE, 3A, 50V, DO-201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock5,440	50V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
US1MHR3G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 1000V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock4,272	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS25L MHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock6,368	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
FR101G A0G	TSC America Inc.	DIODE, FAST, 1A, 50V, 150NS, DO- Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock6,560	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SL44-E3/57T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 4A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 440mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AB, SMC	Stock313,176	40V	4A	440mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
VS-1N1204A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-203AA, DO-4, Stud	Stock5,504	400V	12A	1.35V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1.5mA @ 400V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 200°C
MBR1H100SFT3G	ON Semiconductor	DIODE SCHOTTKY 100V 1A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 760mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 175°C	Package: SOD-123F	Stock2,431,896	100V	1A	760mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 100V	-	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 175°C
SBRT25M60SLP-13	Diodes Incorporated	DIODE SBR 60V 25A POWERDI5060-8 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 600mV @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 Operating Temperature - Junction: -55°C ~ 150°C	Package: 8-PowerTDFN	Stock28,380	60V	25A	600mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	-	Surface Mount	8-PowerTDFN	PowerDI5060-8	-55°C ~ 150°C
1SS307(TE85L,F)	Toshiba Semiconductor and Storage	DIODE GEN PURP 30V 100MA SMINI Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 30V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock85,548	30V	100mA	1.3V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 30V	6pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini	125°C (Max)
RB520S-30EP-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 100MA 0201B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 850mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: 0201-B Operating Temperature - Junction: 125°C (Max)	Package: 0201 (0603 Metric)	Stock3,504	30V	100mA (DC)	850mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	20µA @ 30V	-	Surface Mount	0201 (0603 Metric)	0201-B	125°C (Max)
B360-13-F	Diodes Incorporated	DIODE SCHOTTKY 60V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock1,649,736	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	200pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
P600M	Diotec Semiconductor	DIODE STD D8X7.5 1000V 6A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 175°C	Package: -	Stock20,958	1000 V	6A	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1000 V	-	Through Hole	P600, Axial	P600	-50°C ~ 175°C
V20K170-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 170V 3.2A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 170 V Current - Average Rectified (Io): 3.2A Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 170 V Capacitance @ Vr, F: 800pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C	Package: -	Request a Quote	170 V	3.2A	1.02 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 170 V	800pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 165°C
EM516GP-TP	Micro Commercial Co	DIODE GEN PURP 1.8KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1800 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	1800 V	1A	1.25 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1800 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
FT2000AD	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	200 V	20A	960 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 200 V	-	Through Hole	TO-220-2	TO-220AC	-50°C ~ 150°C
SK1845D2-3G	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: 535 mV @ 18 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	45 V	18A	535 mV @ 18 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-50°C ~ 150°C
MSASC25H45KS-TR	Microchip Technology	DIODE SCHOTTKY 45V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	25A	610 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™2	ThinKey™2	-55°C ~ 150°C
EGF1D-2HE3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	15pF @ 4V, 1MHz	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
RS1MLWH	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock167,445	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 1000 V	-	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C
VS-SC160FA65	Vishay	MODULES RECTIFIERS - SOT-227 SIC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
GS1M_R1_00001	Panjit International Inc.	DIODE GEN PURP 1KV 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock26,625	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
JANS1N6874UTK2-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-