Page 1712 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SIDC42D60E6
Infineon Technologies

DIODE GEN PURP 600V 100A WAFER

Package: Die

Stock6,512
BAT760-7-36
Diodes Incorporated

DIODE SCHOTTKY 30V 1A SOD323

Package: SC-76, SOD-323

Stock3,824
VS-SDD270M16MPBF
Vishay Semiconductor Diodes Division

MOD DIODE MAP COMPRESSED

Package: -

Stock4,368
R9G22609ASOO
Powerex Inc.

DIODE FAST REC R9G 900A 2600V

Package: -

Stock2,192
1N5618GP-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AC

Package: DO-204AC, DO-15, Axial

Stock3,504
SRA8100HC0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

Package: TO-220-2

Stock2,096
SR1202HB0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 12A,

Package: DO-201AD, Axial

Stock2,944
UB8CT-E3/4W
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,960
VS-4ESH01-M3/87A
Vishay Semiconductor Diodes Division

DIODE FRED

Package: TO-277, 3-PowerDFN

Stock2,976
1N4385GP-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AC

Package: DO-204AC, DO-15, Axial

Stock4,688
ES1BLHRTG
TSC America Inc.

DIODE, SUPER FAST, 1A, 100V, 35N

Package: DO-219AB

Stock4,544
US1B-M3/61T
Vishay Semiconductor Diodes Division

DIODE 1A 100V 50NS DO-214AC

Package: DO-214AC, SMA

Stock161,400
SE10FDHM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO219AB

Package: DO-219AB

Stock2,960
HER203G A0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 200V,

Package: DO-204AC, DO-15, Axial

Stock4,752
VS-20ETS08PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 20A TO220AC

Package: TO-220-2

Stock16,824
MA3Z7920GL
Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA SMINI3

Package: SC-85

Stock23,040
VS-10ETS12FP-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 10A TO220FP

Package: TO-220-2 Full Pack

Stock17,040
ES07B-GS18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.2A DO219AB

Package: DO-219AB

Stock573,222
CD0-5A20
Microchip Technology

DIODE SCHOTTKY 20V 200MA DIE

Package: -

Request a Quote
S10CJHM3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 10A DO214AB

Package: -

Stock31,833

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC42D60E6	Infineon Technologies	DIODE GEN PURP 600V 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock6,512	600V	100A (DC)	1.25V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
BAT760-7-36	Diodes Incorporated	DIODE SCHOTTKY 30V 1A SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 15V Capacitance @ Vr, F: 25pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	Package: SC-76, SOD-323	Stock3,824	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 15V	25pF @ 5V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
VS-SDD270M16MPBF	Vishay Semiconductor Diodes Division	MOD DIODE MAP COMPRESSED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock4,368	-	-	-	-	-	-	-	-	-	-	-
R9G22609ASOO	Powerex Inc.	DIODE FAST REC R9G 900A 2600V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock2,192	-	-	-	-	-	-	-	-	-	-	-
1N5618GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: 25pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AC, DO-15, Axial	Stock3,504	600V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	25pF @ 12V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
SRA8100HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C	Package: TO-220-2	Stock2,096	100V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SR1202HB0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 12A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	Package: DO-201AD, Axial	Stock2,944	20V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
UB8CT-E3/4W	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,960	150V	8A	1.02V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 150V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
VS-4ESH01-M3/87A	Vishay Semiconductor Diodes Division	DIODE FRED Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 4V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock2,976	100V	4A	930mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 4V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-65°C ~ 175°C
1N4385GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AC, DO-15, Axial	Stock4,688	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
ES1BLHRTG	TSC America Inc.	DIODE, SUPER FAST, 1A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock4,544	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
US1B-M3/61T	Vishay Semiconductor Diodes Division	DIODE 1A 100V 50NS DO-214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock161,400	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SE10FDHM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock2,960	200V	1A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	5µA @ 200V	7.5pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
HER203G A0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 2A, 200V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock4,752	200V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
VS-20ETS08PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 20A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-2	Stock16,824	800V	20A	1.1V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1000V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
MA3Z7920GL	Panasonic Electronic Components	DIODE SCHOTTKY 30V 100MA SMINI3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 2ns Current - Reverse Leakage @ Vr: 15µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2 Operating Temperature - Junction: 125°C (Max)	Package: SC-85	Stock23,040	30V	100mA	550mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	2ns	15µA @ 30V	-	Surface Mount	SC-85	SMini3-F2	125°C (Max)
VS-10ETS12FP-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 10A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-2 Full Pack	Stock17,040	1200V	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 1200V	-	Through Hole	TO-220-2 Full Pack	TO-220-2 Full Pack	-40°C ~ 150°C
ES07B-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1.2A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 4pF @ 4V, 50MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock573,222	100V	1.2A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 100V	4pF @ 4V, 50MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
CD0-5A20	Microchip Technology	DIODE SCHOTTKY 20V 200MA DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 20 V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	20 V	200mA	500 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 20 V	50pF @ 0V, 1MHz	Surface Mount	Die	Die	-65°C ~ 125°C
S10CJHM3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 10A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 79pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock31,833	600 V	10A	1 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	10 µA @ 600 V	79pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5B-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock3,549	100 V	5A	1.15 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 100 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3D35065D1	SMC Diode Solutions	DIODE SIL CARB 650V 35A TO247AD Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 35 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 45 µA @ 650 V Capacitance @ Vr, F: 2000pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,755	650 V	35A	1.7 V @ 35 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 650 V	2000pF @ 0V, 1MHz	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
CDBDSC51200-G	Comchip Technology	DIODE SIL CARBIDE 1.2KV 18A DPAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: 475pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,233	1200 V	18A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	475pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 175°C
SS2060LHE-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 60V 2A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock14,571	60 V	2A	680 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
TRS12A65F-S1Q	Toshiba Semiconductor and Storage	DIODE SIL CARB 650V 12A TO220F Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 60 µA @ 650 V Capacitance @ Vr, F: 44pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: 175°C (Max)	Package: -	Stock150	650 V	12A	1.6 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	44pF @ 650V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220F-2L	175°C (Max)
V10P15-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 10A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	150 V	10A	1.08 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 150 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
SM5393PL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	1.5A	1.1 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	5 µA @ 200 V	11pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
SK86LHE3-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	60 V	8A	650 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	400pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C