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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-214AA, SMB |
Stock7,920 |
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400V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 1KV 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock3,441,852 |
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1000V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock5,936 |
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100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 42ns
- Current - Reverse Leakage @ Vr: 3µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,216 |
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600V | 4A | 1.8V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 3µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 2A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: 200pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AC, SMA |
Stock328,632 |
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40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 20V 3A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: 200pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AB, SMC |
Stock596,688 |
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20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 900V 35A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 900V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 190°C
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Package: DO-203AB, DO-5, Stud |
Stock5,776 |
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900V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
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Micro Commercial Co |
DIODE GEN PURP 50V 6A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock6,240 |
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50V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Sanken |
DIODE GEN PURP 400V 1.2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock6,368 |
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400V | 1.2A | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 1A 90V DO-214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 860mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AC, SMA |
Stock3,360 |
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90V | 1A | 860mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 90V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 175°C |
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Bourns Inc. |
DIODE GEN PURP 1KV 1A 1408
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: Chip, Concave Terminals
- Supplier Device Package: 1408
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: Chip, Concave Terminals |
Stock6,880 |
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1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | Chip, Concave Terminals | 1408 | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, SUPER FAST, 1A, 150V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: T-18, Axial |
Stock3,584 |
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150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 60V 2A SOD123FL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: 210pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: SOD-123F |
Stock14,160 |
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60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 210pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -65°C ~ 125°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 1A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AA, SMB |
Stock22,800 |
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40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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NTE Electronics, Inc |
DIODE GP 1.6KV 1625A DO200AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 1625A
- Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: DO-200AB
- Operating Temperature - Junction: -30°C ~ 175°C
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Package: - |
Request a Quote |
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1600 V | 1625A | 1.93 V @ 3770 A | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1600 V | - | Clamp On | DO-200AB, B-PUK | DO-200AB | -30°C ~ 175°C |
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Panjit International Inc. |
DIODE SCHOTTKY 50V 6A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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50 V | 6A | 750 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 50 V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Nexperia USA Inc. |
DIODE GEN PURP 400V 1A SOD123W
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 400 nA @ 400 V
- Capacitance @ Vr, F: 14pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock9 |
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400 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 400 nA @ 400 V | 14pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123W | 150°C (Max) |
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Vishay General Semiconductor - Diodes Division |
DIODE GP 600V 15A TO220-2FP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 33 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220-2 Full Pack
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock3,183 |
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600 V | 15A | 2.1 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 33 ns | 10 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -55°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.2KV 30A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1200 V | 30A | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 50 µA @ 1200 V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 90V 2A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 7 µA @ 90 V
- Capacitance @ Vr, F: 70pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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90 V | 2A | 790 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 7 µA @ 90 V | 70pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
25NS, 6A, 600V, ULTRA FAST RECOV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 26 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 600 V
- Capacitance @ Vr, F: 48pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock9,000 |
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600 V | 6A | 1.7 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 26 ns | 2 µA @ 600 V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
1005, 40V, 0.2A, SCHOTTKY DIODE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 200 nA @ 40 V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 1005 (2512 Metric)
- Supplier Device Package: 1005
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: - |
Request a Quote |
|
40 V | 200mA | 1 V @ 40 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 200 nA @ 40 V | 5pF @ 0V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -65°C ~ 125°C |
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Micro Commercial Co |
DIODE GEN PURP 400V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
|
400 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 50pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 125°C |
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Diodes Incorporated |
DIODE SBR 100V 3A SMAF T&R
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 810 mV @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA Flat Leads
- Supplier Device Package: SMAF
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
100 V | 3A | 810 mV @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 100 V | - | Surface Mount | DO-214AC, SMA Flat Leads | SMAF | -55°C ~ 150°C |
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Harris Corporation |
ULTRAFAST DIODE
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 20A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 160 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock2,490 |
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600 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 200V 85A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5 (DO-203AB)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
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200 V | 85A | 1.15 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -65°C ~ 200°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 100V 4.2A FLATPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 4.2A
- Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 100 V
- Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: FlatPAK (5x6)
- Operating Temperature - Junction: -40°C ~ 165°C
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Package: - |
Stock10,167 |
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100 V | 4.2A | 760 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 100 V | 1900pF @ 4V, 1MHz | Surface Mount | 8-PowerTDFN | FlatPAK (5x6) | -40°C ~ 165°C |