Page 1736 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

RGP10G-M3/73
Vishay Semiconductor Diodes Division

DIODE SW 1A 400V 150NS DO204AL

Package: DO-204AL, DO-41, Axial

Stock7,984
JANTX1N6623
Microsemi Corporation

DIODE GEN PURP 880V 1A AXIAL

Package: A, Axial

Stock5,040
1N456A_T50R
Fairchild/ON Semiconductor

DIODE GEN PURP 30V 500MA DO35

Package: DO-204AH, DO-35, Axial

Stock5,824
MBR745
ON Semiconductor

DIODE SCHOTTKY 45V 7.5A TO220-2

Package: TO-220-2

Stock2,143,776
1N5402RL
ON Semiconductor

DIODE GEN PURP 200V 3A DO201AD

Package: DO-201AA, DO-27, Axial

Stock7,008
30WQ06FNTRL
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock55,200
10ETS08STRL
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,448
VSKE320-08
Vishay Semiconductor Diodes Division

DIODE MODULE 800V 320A MAGNAPAK

Package: 3-MAGN-A-PAK?

Stock5,728
B160-13
Diodes Incorporated

DIODE SCHOTTKY 60V 1A SMA

Package: DO-214AC, SMA

Stock360,000
VS-86HFR80M
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 85A DO203AB

Package: DO-203AB, DO-5, Stud

Stock4,704
JANTX1N4247
Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

Package: A, Axial

Stock3,776
BYG21K-M3/TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.5A

Package: DO-214AC, SMA

Stock7,232
S3D M6G
TSC America Inc.

DIODE, 3A, 200V, DO-214AB (SMC)

Package: DO-214AB, SMC

Stock4,432
SS29LHR3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

Package: DO-219AB

Stock7,408
LS101C-GS18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 30MA SOD80

Package: SOD-80 Variant

Stock4,208
STTH1003SBY-TR
STMicroelectronics

DIODE GEN PURP 300V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,408
LL103A-GS08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 200MA SOD80

Package: DO-213AC, MINI-MELF, SOD-80

Stock704,844
1N486B_T50A
Fairchild/ON Semiconductor

DIODE GEN PURP 250V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock5,616
VS-MBRA140TRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A SMA

Package: DO-214AC, SMA

Stock546,432
1SS221-T1B-A
Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP10G-M3/73	Vishay Semiconductor Diodes Division	DIODE SW 1A 400V 150NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock7,984	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
JANTX1N6623	Microsemi Corporation	DIODE GEN PURP 880V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 880V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 500nA @ 880V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	Package: A, Axial	Stock5,040	880V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	500nA @ 880V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
1N456A_T50R	Fairchild/ON Semiconductor	DIODE GEN PURP 30V 500MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25nA @ 25V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock5,824	30V	500mA	1V @ 100mA	Standard Recovery >500ns, > 200mA (Io)	-	25nA @ 25V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
MBR745	ON Semiconductor	DIODE SCHOTTKY 45V 7.5A TO220-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-220-2	Stock2,143,776	45V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
1N5402RL	ON Semiconductor	DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 170°C	Package: DO-201AA, DO-27, Axial	Stock7,008	200V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 170°C
30WQ06FNTRL	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 3.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock55,200	60V	3.5A	610mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 60V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
10ETS08STRL	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 10A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,448	800V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
VSKE320-08	Vishay Semiconductor Diodes Division	DIODE MODULE 800V 320A MAGNAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 320A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: 3-MAGN-A-PAK? Supplier Device Package: MAGN-A-PAK? Operating Temperature - Junction: -	Package: 3-MAGN-A-PAK?	Stock5,728	800V	320A	-	Standard Recovery >500ns, > 200mA (Io)	-	50mA @ 800V	-	Chassis Mount	3-MAGN-A-PAK?	MAGN-A-PAK?	-
B160-13	Diodes Incorporated	DIODE SCHOTTKY 60V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AC, SMA	Stock360,000	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	110pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
VS-86HFR80M	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 85A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	Package: DO-203AB, DO-5, Stud	Stock4,704	800V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
JANTX1N4247	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: A, Axial	Stock3,776	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
BYG21K-M3/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock7,232	800V	1.5A	1.6V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	1µA @ 800V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S3D M6G	TSC America Inc.	DIODE, 3A, 200V, DO-214AB (SMC) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock4,432	200V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SS29LHR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock7,408	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
LS101C-GS18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 30MA SOD80 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 125°C (Max)	Package: SOD-80 Variant	Stock4,208	40V	30mA	900mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 30V	2.2pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	125°C (Max)
STTH1003SBY-TR	STMicroelectronics	DIODE GEN PURP 300V 10A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,408	300V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	-40°C ~ 175°C
LL103A-GS08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 200MA SOD80 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max)	Package: DO-213AC, MINI-MELF, SOD-80	Stock704,844	40V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	10ns	5µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	125°C (Max)
1N486B_T50A	Fairchild/ON Semiconductor	DIODE GEN PURP 250V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50nA @ 225V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock5,616	250V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50nA @ 225V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
VS-MBRA140TRPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 38pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock546,432	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	38pF @ 10V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
1SS221-T1B-A	Renesas Electronics Corporation	DIODE FOR HIGH SPEED SWITCHING Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT23-3 (TO-236) Operating Temperature - Junction: 150°C	Package: -	Request a Quote	100 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 ns	1 µA @ 100 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT23-3 (TO-236)	150°C
MBRF745	onsemi	DIODE SCHOTTKY 45V 7.5A 2PIN(2+T Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	45 V	7.5A	840 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	Through Hole	TO-220-2 Full Pack	TO-220	-65°C ~ 150°C
SFM13PL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	150 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 150 V	10pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-50°C ~ 150°C
RS1PJHM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 600 V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
SB53AFC-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 30V 5A SMAF-C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: 159pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock16,152	30 V	5A	540 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	159pF @ 10V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C
YQ5RSM10SDTFTL1	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 5A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C	Package: -	Stock12,000	100 V	5A	770 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	25 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	175°C
V20KM60-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 4.7A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 4.7A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 60 V Capacitance @ Vr, F: 2860pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C	Package: -	Stock9,000	60 V	4.7A	650 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 60 V	2860pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 165°C
SMBT1371LT1	onsemi	SS SOT23 GP XSTR SPCL TR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MSS2P2HM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 20V 2A MICROSMP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 20 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: MicroSMP Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock10,947	20 V	2A	600 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 20 V	65pF @ 4V, 1MHz	Surface Mount	MicroSMP	MicroSMP (DO-219AD)	-55°C ~ 150°C