Page 1738 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4006-N-0-4-AP
Micro Commercial Co

DIODE GEN PURP 800V 1A DO-41

Package: DO-204AL, DO-41, Axial

Stock3,104
CDBMH2100-HF
Comchip Technology

DIODE SCHOTTKY 100V 2A SOD123T

Package: SOD-123T

Stock5,920
ES1CHE3/5AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO214AC

Package: DO-214AC, SMA

Stock7,536
SK15-13
Diodes Incorporated

DIODE SCHOTTKY 50V 1A SMB

Package: DO-214AA, SMB

Stock3,856
VS-SD2500C25K
Vishay Semiconductor Diodes Division

DIODE MODULE 2.5KV 3000A DO200AC

Package: DO-200AC, K-PUK

Stock2,912
VS-VSKE250-04PBF
Vishay Semiconductor Diodes Division

DIODE GEN 400V 250A MAGNAPAK

Package: MAGN-A-PAK (3)

Stock2,752
A177RPB
Powerex Inc.

DIODE GEN PURP REV 1.2KV DO205AA

Package: DO-205AA, DO-8, Stud

Stock3,984
FESB16FTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 16A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,752
DLA40IM800PC
IXYS

DIODE GEN PURP 800V 40A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,080
HERA808G C0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 8A, 1000V

Package: TO-220-2

Stock3,392
SE40PDHM3_A/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2.4A TO277A

Package: TO-277, 3-PowerDFN

Stock3,808
SR302HB0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

Package: DO-201AD, Axial

Stock7,472
CDBER43
Comchip Technology

DIODE SCHOTTKY 30V 200MA 0503

Package: 0503 (1308 Metric)

Stock2,400
US1D R3G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

Package: DO-214AC, SMA

Stock5,136
DSI30-12A
IXYS

DIODE GEN PURP 1.2KV 30A TO220AC

Package: TO-220-2

Stock8,940
SB3100TA
SMC Diode Solutions

DIODE SCHOTTKY 100V DO201AD

Package: DO-201AD, Axial

Stock74,574
JANTX1N6672R
Microchip Technology

DIODE GEN PURP 300V 15A TO254

Package: -

Request a Quote
PDS560Q-13-2478
Diodes Incorporated

DIODE

Package: -

Request a Quote
ER1006F_T0_00001
Panjit International Inc.

DIODE GEN PURP 600V 10A ITO220AC

Package: -

Stock2,952
S3420
Microchip Technology

DIODE GEN PURP 200V 45A DO5

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4006-N-0-4-AP	Micro Commercial Co	DIODE GEN PURP 800V 1A DO-41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock3,104	800V	1A (DC)	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
CDBMH2100-HF	Comchip Technology	DIODE SCHOTTKY 100V 2A SOD123T Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 100V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: SOD-123T Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123T	Stock5,920	100V	2A (DC)	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 100V	160pF @ 4V, 1MHz	Surface Mount	SOD-123T	SOD-123T	-55°C ~ 150°C
ES1CHE3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock7,536	150V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK15-13	Diodes Incorporated	DIODE SCHOTTKY 50V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-214AA, SMB	Stock3,856	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	110pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 125°C
VS-SD2500C25K	Vishay Semiconductor Diodes Division	DIODE MODULE 2.5KV 3000A DO200AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500V Current - Average Rectified (Io): 3000A Voltage - Forward (Vf) (Max) @ If: 1.41V @ 4000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75mA @ 2500V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: DO-200AC, K-PUK Operating Temperature - Junction: -	Package: DO-200AC, K-PUK	Stock2,912	2500V	3000A	1.41V @ 4000A	Standard Recovery >500ns, > 200mA (Io)	-	75mA @ 2500V	-	Clamp On	DO-200AC, K-PUK	DO-200AC, K-PUK	-
VS-VSKE250-04PBF	Vishay Semiconductor Diodes Division	DIODE GEN 400V 250A MAGNAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: MAGN-A-PAK (3) Supplier Device Package: MAGN-A-PAK? Operating Temperature - Junction: -40°C ~ 150°C	Package: MAGN-A-PAK (3)	Stock2,752	400V	250A	-	Standard Recovery >500ns, > 200mA (Io)	-	50mA @ 400V	-	Chassis Mount	MAGN-A-PAK (3)	MAGN-A-PAK?	-40°C ~ 150°C
A177RPB	Powerex Inc.	DIODE GEN PURP REV 1.2KV DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.3µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 125°C	Package: DO-205AA, DO-8, Stud	Stock3,984	1200V	100A	-	Standard Recovery >500ns, > 200mA (Io)	2.3µs	-	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 125°C
FESB16FTHE3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,752	300V	16A	1.3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	175pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
DLA40IM800PC	IXYS	DIODE GEN PURP 800V 40A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 40A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,080	800V	40A	1.3V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	10pF @ 400V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 175°C
HERA808G C0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 8A, 1000V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock3,392	-	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 1000V	55pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SE40PDHM3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2.4A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2.4A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.2µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock3,808	200V	2.4A	1.05V @ 4A	Standard Recovery >500ns, > 200mA (Io)	2.2µs	10µA @ 200V	28pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SR302HB0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-201AD, Axial	Stock7,472	20V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
CDBER43	Comchip Technology	DIODE SCHOTTKY 30V 200MA 0503 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0503 (1308 Metric) Supplier Device Package: 0503/SOD-723F Operating Temperature - Junction: 125°C (Max)	Package: 0503 (1308 Metric)	Stock2,400	30V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	10pF @ 1V, 1MHz	Surface Mount	0503 (1308 Metric)	0503/SOD-723F	125°C (Max)
US1D R3G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 200V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock5,136	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
DSI30-12A	IXYS	DIODE GEN PURP 1.2KV 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 1200V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-220-2	Stock8,940	1200V	30A	1.29V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 1200V	10pF @ 400V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
SB3100TA	SMC Diode Solutions	DIODE SCHOTTKY 100V DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: 250pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock74,574	100V	-	790mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	250pF @ 5V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
JANTX1N6672R	Microchip Technology	DIODE GEN PURP 300V 15A TO254 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 50 µA @ 240 V Capacitance @ Vr, F: 150pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254 Operating Temperature - Junction: -	Package: -	Request a Quote	300 V	15A	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 240 V	150pF @ 10V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254	-
PDS560Q-13-2478	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	60 V	5A	770 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 60 V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-65°C ~ 150°C
ER1006F_T0_00001	Panjit International Inc.	DIODE GEN PURP 600V 10A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 62pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock2,952	600 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 600 V	62pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
S3420	Microchip Technology	DIODE GEN PURP 200V 45A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	200 V	45A	1.15 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
ER1GAFC_R1_00001	Panjit International Inc.	DIODE GEN PURP 400V 1A SMAF-C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock7,500	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 400 V	15pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C
HSGLWH	Taiwan Semiconductor Corporation	50NS, 0.8A, 400V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 14pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock60,000	400 V	800mA	1.3 V @ 800 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 400 V	14pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
US1MHM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1KV 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 1000 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BAS321-8F	Nexperia USA Inc.	DIODE GEN PURP 200V 250MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max)	Package: -	Stock10,890	200 V	250mA	1.25 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 200 V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
VSB3200-M3-51	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 200V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 200 V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	200 V	3A	1.2 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 200 V	175pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
RS2KAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A THIN SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock102,564	800 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	1 µA @ 800 V	10pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
SVT1560V_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 60V 15A TO277 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	60 V	15A	510 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 60 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277	-55°C ~ 150°C
SK34SMA-3G-AQ	Diotec Semiconductor	SCHOTTKY SMA 40V 3A 150C AECQ101 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC, SMA Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Stock22,500	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Surface Mount	DO-214AC, SMA	DO-214AC, SMA	-50°C ~ 150°C