Page 1743 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

AGP15-600-E3/54
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A DO204

Package: DO-204AC, DO-15, Axial

Stock3,056
CSD08060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 12.5A TO220

Package: TO-220-2

Stock5,232
50WQ06FNTRL
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock679,404
SD101C-T
Diodes Incorporated

DIODE SCHOTTKY 40V 15MA DO35

Package: DO-204AH, DO-35, Axial

Stock3,344
MBRH12060
GeneSiC Semiconductor

DIODE MODULE 60V 120A D-67

Package: D-67

Stock7,408
JANTX1N5809
Microsemi Corporation

DIODE GEN PURP 100V 3A AXIAL

Package: B, Axial

Stock6,288
VS-MBRB735TRL-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 7.5A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,944
GL34BHE3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

Package: DO-213AA (Glass)

Stock5,696
GF1G-E3/5CA
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO214BA

Package: DO-214BA

Stock3,488
MUR115S M4G
TSC America Inc.

DIODE, ULTRA FAST, 1A, 150V, 25N

Package: DO-214AA, SMB

Stock5,168
HS1GL RTG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 400V,

Package: DO-219AB

Stock6,832
HER104G R1G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 300V,

Package: DO-204AL, DO-41, Axial

Stock2,656
S5G R7G
TSC America Inc.

DIODE, 5A, 400V, DO-214AB (SMC)

Package: DO-214AB, SMC

Stock3,136
JANTX1N6622
Microsemi Corporation

DIODE GEN PURP 660V 2A AXIAL

Package: A, Axial

Stock7,536
1N5802US
Microsemi Corporation

DIODE GEN PURP 50V 1A D5A

Package: SQ-MELF, A

Stock6,912
FFH30S60STU
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 30A TO247

Package: TO-247-2

Stock7,440
RB060MM-30TR
Rohm Semiconductor

DIODE SCHOTTKY 30V 2A PMDU

Package: SOD-123F

Stock7,216
1N2493
Microchip Technology

DIODE GEN PURP 200V 6A DO4

Package: -

Request a Quote
1N4529
Microchip Technology

STANDARD RECTIFIER

Package: -

Request a Quote
JANTXV1N1202A
Microchip Technology

DIODE GEN PURP 200V 12A DO203AA

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
AGP15-600-E3/54	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 1.5A DO204 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AC, DO-15, Axial	Stock3,056	600V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 600V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
CSD08060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 12.5A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 470pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock5,232	600V	12.5A	1.8V @ 8A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	470pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
50WQ06FNTRL	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 5.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5.5A Voltage - Forward (Vf) (Max) @ If: 570mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 60V Capacitance @ Vr, F: 360pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock679,404	60V	5.5A	570mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 60V	360pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
SD101C-T	Diodes Incorporated	DIODE SCHOTTKY 40V 15MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 15mA (DC) Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AH, DO-35, Axial	Stock3,344	40V	15mA (DC)	900mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 30V	2.2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
MBRH12060	GeneSiC Semiconductor	DIODE MODULE 60V 120A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 750mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock7,408	60V	120A	750mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	4mA @ 20V	-	Chassis Mount	D-67	D-67	-
JANTX1N5809	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: B, Axial	Stock6,288	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
VS-MBRB735TRL-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 7.5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 570mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,944	35V	7.5A	570mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	400pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-65°C ~ 150°C
GL34BHE3/98	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AA (Glass)	Stock5,696	100V	500mA	1.2V @ 500mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
GF1G-E3/5CA	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214BA	Stock3,488	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 400V	-	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
MUR115S M4G	TSC America Inc.	DIODE, ULTRA FAST, 1A, 150V, 25N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AA, SMB	Stock5,168	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
HS1GL RTG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock6,832	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HER104G R1G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 300V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock2,656	300V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S5G R7G	TSC America Inc.	DIODE, 5A, 400V, DO-214AB (SMC) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock3,136	400V	5A	1.15V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	1.5µs	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
JANTX1N6622	Microsemi Corporation	DIODE GEN PURP 660V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 660V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	Package: A, Axial	Stock7,536	660V	2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 660V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
1N5802US	Microsemi Corporation	DIODE GEN PURP 50V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	Package: SQ-MELF, A	Stock6,912	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
FFH30S60STU	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-247-2	Stock7,440	600V	30A	2.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 150°C
RB060MM-30TR	Rohm Semiconductor	DIODE SCHOTTKY 30V 2A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	Package: SOD-123F	Stock7,216	30V	2A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
1N2493	Microchip Technology	DIODE GEN PURP 200V 6A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	200 V	6A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
1N4529	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	1000 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 200°C
JANTXV1N1202A	Microchip Technology	DIODE GEN PURP 200V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 38 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	200 V	12A	1.35 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
SFA806G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock3,000	400 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	60pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
BYG20D	Diotec Semiconductor	IC Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	200 V	1.5A	1.4 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 200 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
VS-8ETX06-1-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A TO262AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	8A	3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	24 ns	50 µA @ 600 V	-	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262AA	-65°C ~ 175°C
MBR6200F_T0_00001	Panjit International Inc.	DIODE SCHOTTKY 200V 6A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Stock5,715	200 V	6A	900 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 175°C
XBS023P11R-G	Torex Semiconductor Ltd	DIODE SCHOTTKY 30V 200MA SOD523P Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523P Operating Temperature - Junction: 125°C	Package: -	Stock300	30 V	200mA	500 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	100 µA @ 30 V	-	Surface Mount	SC-79, SOD-523	SOD-523P	125°C
FFSD0465A	onsemi	DIODE SIL CARB 650V 7.6A DPAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 7.6A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 258pF @ 1V, 100kHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock7,326	650 V	7.6A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	258pF @ 1V, 100kHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 175°C
V2FM15HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 2A DO219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 150 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock23,709	150 V	2A	1.46 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 150 V	90pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 175°C
BAT54W	SMC Diode Solutions	DIODE SCHOTTKY 30V 200MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: 125°C (Max)	Package: -	Request a Quote	30 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	125°C (Max)