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Vishay Semiconductor Diodes Division |
DIODE GEN PURPOSE DO204AL
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock2,496 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURPOSE DO204AL
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock5,216 |
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Microsemi Corporation |
DIODE GEN PURP 1KV 35A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AB, DO-5, Stud |
Stock7,424 |
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1000V | 35A | 2.3V @ 500A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 50A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 15µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock5,264 |
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200V | 50A | 1.4V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE FAST RECOVERY 8A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,896 |
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200V | 8A | 1.2V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA USC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-76, SOD-323 |
Stock5,184 |
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30V | 500mA | 450mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Diodes Incorporated |
DIODE SCHOTTKY 60V 500MA SOT23-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 500mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10ns
- Current - Reverse Leakage @ Vr: 40µA @ 45V
- Capacitance @ Vr, F: 20pF @ 25V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: 125°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,224 |
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60V | 500mA (DC) | 630mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 40µA @ 45V | 20pF @ 25V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 1.6KV 165A INTAPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 165A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20mA @ 1600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (2)
- Supplier Device Package: Module
- Operating Temperature - Junction: -
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Package: INT-A-PAK (2) |
Stock2,880 |
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1600V | 165A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1600V | - | Chassis Mount | INT-A-PAK (2) | Module | - |
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Semtech Corporation |
DIODE RECT 10KV 130MA FAST REC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 10000V
- Current - Average Rectified (Io): 130mA
- Voltage - Forward (Vf) (Max) @ If: 10V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5µs
- Current - Reverse Leakage @ Vr: 1µA @ 10000V (10kV)
- Capacitance @ Vr, F: 3.2pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: Axial |
Stock6,176 |
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10000V | 130mA | 10V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 1µA @ 10000V (10kV) | 3.2pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 1A 60V SMBG
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock6,736 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-2 |
Stock2,416 |
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300V | 8A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 45V 10A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 490mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 16ns
- Current - Reverse Leakage @ Vr: 20mA @ 10V
- Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: CFP15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: 3-SMD, Flat Leads |
Stock2,288 |
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45V | 10A | 490mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 20mA @ 10V | 1170pF @ 1V, 1MHz | Surface Mount | 3-SMD, Flat Leads | CFP15 | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, ULTRA FAST, 0.6A, 200V, 1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 600mA
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: T-18, Axial |
Stock3,312 |
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200V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 200V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock5,104 |
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400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 0.5A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-76, SOD-323 |
Stock6,992 |
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40V | 500mA | 470mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SC-76, SOD-323 | SOD-323 | 125°C (Max) |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock6,800 |
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50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 50V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 50V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock98,070 |
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50V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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SMC Diode Solutions |
DIODE GEN PURP 200V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Diotec Semiconductor |
DIODE SMA 1800V 1A 150C
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 1800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC, SMA
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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1800 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 1800 V | - | Surface Mount | DO-214AC, SMA | DO-214AC, SMA | -50°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 100V 12A TO254
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 300pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA
- Supplier Device Package: TO-254
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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100 V | 12A | 1.05 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 300pF @ 5V, 1MHz | Through Hole | TO-254-3, TO-254AA | TO-254 | - |
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Panjit International Inc. |
DIODE GEN PURP 1KV 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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1000 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 1000 V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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SMC Diode Solutions |
PLANAR SCHOTTKY MODULE 45V 35A G
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock180 |
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Microchip Technology |
DIODE SCHOTTKY 30V 150A THINKEY3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 30 V
- Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: ThinKey™3
- Supplier Device Package: ThinKey™3
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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30 V | 150A | 500 mV @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 30 V | 7500pF @ 5V, 1MHz | Surface Mount | ThinKey™3 | ThinKey™3 | -65°C ~ 150°C |
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KYOCERA AVX |
SCHOTTKY DIODES
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
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40 V | 1A | 380 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | - | Surface Mount | 1206 (3216 Metric) | 1206 | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
50 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 50 V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 150V 150MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-204AH (DO-35)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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150 V | 150mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 150 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-204AH (DO-35) | -65°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 60V 5A CFP15B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 560 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 14 ns
- Current - Reverse Leakage @ Vr: 400 µA @ 60 V
- Capacitance @ Vr, F: 429pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: CFP15B
- Operating Temperature - Junction: 175°C
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Package: - |
Stock11,541 |
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60 V | 5A | 560 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 14 ns | 400 µA @ 60 V | 429pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15B | 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 120V 1.8A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 1.8A
- Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 120 V
- Capacitance @ Vr, F: 180pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -40°C ~ 175°C
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120 V | 1.8A | 620 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 120 V | 180pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -40°C ~ 175°C |