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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock7,008 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY TO-263AB
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock4,000 |
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- | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 25nA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AH, DO-35, Axial |
Stock3,504 |
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75V | 200mA | 1V @ 30mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 600V 5A TO252-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 50pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-3
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,136 |
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600V | 5A | 1.9V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 600V | 50pF @ 10V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A DO204AL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock3,504 |
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50V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 400V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock6,192 |
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400V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 100V 3A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -65°C ~ 170°C
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Package: DO-201AA, DO-27, Axial |
Stock1,283,544 |
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100V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 170°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 5A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 95ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock13,428 |
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1200V | 5A | 2.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 150°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 400V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-201AA, DO-27, Axial |
Stock2,624 |
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400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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Diodes Incorporated |
DIODE GEN PURP 200V 3A SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AB, SMC |
Stock7,984 |
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200V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
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Powerex Inc. |
DIODE MODULE 800V 800A DO200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 800A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10µs
- Current - Reverse Leakage @ Vr: 50mA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, R62
- Operating Temperature - Junction: -
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Package: DO-200AA, A-PUK |
Stock3,904 |
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800V | 800A | 1.8V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 10µs | 50mA @ 800V | - | Chassis Mount | DO-200AA, A-PUK | DO-200AA, R62 | - |
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GeneSiC Semiconductor |
DIODE SCHOTTKY REV 35V DO5
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 80A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock6,224 |
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35V | 80A | 750mV @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 35V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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Sanken |
DIODE GEN PURP 300V 2A SJP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 50µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, J-Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: 2-SMD, J-Lead |
Stock3,200 |
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300V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 300V | - | Surface Mount | 2-SMD, J-Lead | 2-SMD | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 6
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock3,072 |
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60V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO213AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AB, MELF (Glass) |
Stock3,424 |
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200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 500MA DO204
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 5µA @ 2000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock5,952 |
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2000V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 2000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Comchip Technology |
DIODE SCHOTTKY 20V 1A SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Capacitance @ Vr, F: 120pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -
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Package: SC-76, SOD-323 |
Stock3,504 |
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20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 120pF @ 4V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | - |
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Panasonic Electronic Components |
DIODE GEN PURP 30V 200MA SOD882
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 560mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 2.2ns
- Current - Reverse Leakage @ Vr: 5µA @ 30V
- Capacitance @ Vr, F: 6pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: SOD-882
- Operating Temperature - Junction: 125°C (Max)
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Package: SOD-882 |
Stock6,144 |
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30V | 200mA | 560mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 2.2ns | 5µA @ 30V | 6pF @ 10V, 1MHz | Surface Mount | SOD-882 | SOD-882 | 125°C (Max) |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 800V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock4,544 |
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800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 400V 2A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 28pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AA, SMB |
Stock3,056 |
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400V | 2A | 1.4V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 28pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 20V 3A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA, HSMB
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AA, SMB |
Stock26,400 |
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20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA, HSMB | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 1A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock18,000 |
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150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 150 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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WeEn Semiconductors |
DIODE SIL CARBIDE 650V 4A DPAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 650 V
- Capacitance @ Vr, F: 138pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 138pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
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Microchip Technology |
DIODE SCHOTTKY 30V 150A THINKEY3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 30 V
- Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: ThinKey™3
- Supplier Device Package: ThinKey™3
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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30 V | 150A | 500 mV @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 30 V | 7500pF @ 5V, 1MHz | Surface Mount | ThinKey™3 | ThinKey™3 | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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50 V | 4A | 1 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 50 V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 16A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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40 V | 16A | 550 mV @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 125°C |
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Micro Commercial Co |
RECTIFIERS
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 70 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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1200 V | 30A | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 5 µA @ 1200 V | 100pF @ 4V, 1MHz | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 100V 3A SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Stock7,380 |
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100 V | 3A | 1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |