Page 1809 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

DSK10B-AT1
ON Semiconductor

DIODE GEN PURP 100V 1A AXIAL

Package: Axial

Stock6,592
CEFB202-G
Comchip Technology

DIODE GEN PURP 100V 2A DO214AA

Package: DO-214AA, SMB

Stock2,912
ES3C-13
Diodes Incorporated

DIODE GEN PURP 150V 3A SMC

Package: DO-214AB, SMC

Stock2,816
VS-SD400C04C
Vishay Semiconductor Diodes Division

DIODE MODULE 400V 800A D200AA

Package: DO-200AA, A-PUK

Stock6,432
1N3295A
GeneSiC Semiconductor

DIODE GEN PURP 1KV 100A DO205

Package: DO-205AA, DO-8, Stud

Stock2,512
BYWF29-150-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A ITO220AC

Package: TO-220-2 Full Pack, Isolated Tab

Stock3,584
RU 20A
Sanken

DIODE GEN PURP 600V 1.5A AXIAL

Package: Axial

Stock3,536
MBR5H150VP-G1
Diodes Incorporated

DIODE SCHOTTKY 150V 5A DO27

Package: DO-201AA, DO-27, Axial

Stock6,384
VS-MBRS130L-M3/5BT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A SMB

Package: DO-214AA, SMB

Stock3,120
SS34L M2G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

Package: DO-219AB

Stock6,832
SS26L RHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 6

Package: DO-219AB

Stock7,280
VS-30ETU12THN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1200V 30A TO-220

Package: TO-220-2

Stock3,504
SE10PJ-M3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO220AA

Package: DO-220AA

Stock72,000
FML-G12S
Sanken

DIODE GEN PURP 200V 5A TO220F-2L

Package: TO-220-2 Full Pack

Stock77,568
EM 1AV1
Sanken

DIODE GEN PURP 600V 1A AXIAL

Package: Axial

Stock4,368
15MQ040NTR
SMC Diode Solutions

DIODE SCHOTTKY 40V 2.1A SMA

Package: DO-214AC, SMA

Stock89,796
MUR440G
ON Semiconductor

DIODE GEN PURP 400V 4A AXIAL

Package: DO-201AD, Axial

Stock27,684
VS-10ETS12PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 10A TO220AC

Package: TO-220-2

Stock16,206
1N2064R
Solid State Inc.

DIODE GEN PURP REV 600V 275A DO9

Package: -

Request a Quote
1N6845
Microchip Technology

DIODE SCHOTTKY 45V 40A U3

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DSK10B-AT1	ON Semiconductor	DIODE GEN PURP 100V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	Package: Axial	Stock6,592	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	Axial	-	150°C (Max)
CEFB202-G	Comchip Technology	DIODE GEN PURP 100V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 875mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: 150°C (Max)	Package: DO-214AA, SMB	Stock2,912	100V	2A	875mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	150°C (Max)
ES3C-13	Diodes Incorporated	DIODE GEN PURP 150V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock2,816	150V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
VS-SD400C04C	Vishay Semiconductor Diodes Division	DIODE MODULE 400V 800A D200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 800A Voltage - Forward (Vf) (Max) @ If: 1.86V @ 1930A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, PUK Operating Temperature - Junction: -	Package: DO-200AA, A-PUK	Stock6,432	400V	800A	1.86V @ 1930A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 400V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, PUK	-
1N3295A	GeneSiC Semiconductor	DIODE GEN PURP 1KV 100A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 11mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock2,512	1000V	100A	1.5V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	11mA @ 1000V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
BYWF29-150-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2 Full Pack, Isolated Tab	Stock3,584	150V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 150V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
RU 20A	Sanken	DIODE GEN PURP 600V 1.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock3,536	600V	1.5A	1.1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
MBR5H150VP-G1	Diodes Incorporated	DIODE SCHOTTKY 150V 5A DO27 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 920mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: 175°C (Max)	Package: DO-201AA, DO-27, Axial	Stock6,384	150V	5A	920mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	8µA @ 150V	-	Through Hole	DO-201AA, DO-27, Axial	DO-27	175°C (Max)
VS-MBRS130L-M3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 200pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AA, SMB	Stock3,120	30V	1A	420mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	200pF @ 5V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 125°C
SS34L M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-219AB	Stock6,832	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS26L RHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock7,280	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
VS-30ETU12THN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1200V 30A TO-220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 220ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock3,504	-	30A	-	Fast Recovery =< 500ns, > 200mA (Io)	220ns	-	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SE10PJ-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-220AA	Stock72,000	600V	1A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	5µA @ 600V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
FML-G12S	Sanken	DIODE GEN PURP 200V 5A TO220F-2L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 980mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-2 Full Pack	Stock77,568	200V	5A	980mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	100µA @ 200V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-40°C ~ 150°C
EM 1AV1	Sanken	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 970mV @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock4,368	600V	1A	970mV @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
15MQ040NTR	SMC Diode Solutions	DIODE SCHOTTKY 40V 2.1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 134pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock89,796	40V	2.1A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	134pF @ 10V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
MUR440G	ON Semiconductor	DIODE GEN PURP 400V 4A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AD, Axial	Stock27,684	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 400V	-	Through Hole	DO-201AD, Axial	Axial	-65°C ~ 175°C
VS-10ETS12PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-2	Stock16,206	1200V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
1N2064R	Solid State Inc.	DIODE GEN PURP REV 600V 275A DO9 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-9 Operating Temperature - Junction: -65°C ~ 190°C	Package: -	Request a Quote	600 V	275A	1.3 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 600 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-9	-65°C ~ 190°C
1N6845	Microchip Technology	DIODE SCHOTTKY 45V 40A U3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 860 mV @ 40 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: 800pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 (SMD-0.5) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	40A	860 mV @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	800pF @ 10V, 1MHz	Surface Mount	3-SMD, No Lead	U3 (SMD-0.5)	-55°C ~ 150°C
AS3D020120C	ANBON SEMICONDUCTOR (INT'L) LIMITED	1200V,20A SILICON CARBIDE SCHOTT Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 51A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Capacitance @ Vr, F: 1280pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock60	1200 V	51A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	1280pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
BAT54HGWX	Nexperia USA Inc.	BAT54HGW/SOD323/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C	Package: -	Stock26,433	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C
ZLLS350TA-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 380mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 275 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 ns Current - Reverse Leakage @ Vr: 4 µA @ 30 V Capacitance @ Vr, F: 2.5pF @ 30V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	40 V	380mA	1 V @ 275 mA	Fast Recovery =< 500ns, > 200mA (Io)	1 ns	4 µA @ 30 V	2.5pF @ 30V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	150°C
FR2BAFC_R1_00001	Panjit International Inc.	DIODE GEN PURP 100V 2A SMAF-C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 24pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	24pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C
11DQ03	SMC Diode Solutions	DIODE SCHOTTKY 30V 1.1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1.1A Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 30 V Capacitance @ Vr, F: 55pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock34,587	30 V	1.1A	710 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	55pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-40°C ~ 150°C
BYV10MX-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 10A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C	Package: -	Stock36,114	600 V	10A	2 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C
1N5551USE3	Microchip Technology	DIODE GEN PURP 400V 3A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
SD060SA30A-T1	SMC Diode Solutions	DIODE SCHOTTKY 30V 3A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 30 V Capacitance @ Vr, F: 220pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	30 V	3A	490 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 30 V	220pF @ 5V, 1MHz	Surface Mount	Die	Die	-55°C ~ 150°C