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Renesas Electronics America |
DIODE GEN PURP 430V 20A LDPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 430V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 430V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-83
- Supplier Device Package: 4-LDPAK
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SC-83 |
Stock6,816 |
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430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 480ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC Modified
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-247-2 |
Stock5,888 |
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1200V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 200MA SOT323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 200nA @ 30V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SC-70, SOT-323 |
Stock6,448 |
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40V | 200mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 200nA @ 30V | 5pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SOT-323 | -55°C ~ 125°C |
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Powerex Inc. |
DIODE GEN PURP 400V 175A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 175A
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 470A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 45mA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: DO-205AA, DO-8, Stud |
Stock6,800 |
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400V | 175A | 1.65V @ 470A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 45mA @ 400V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 60A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 188A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-203AB, DO-5, Stud |
Stock2,944 |
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150V | 60A | 1.3V @ 188A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 150V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.75mA @ 35V
- Capacitance @ Vr, F: 900pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 155°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,096 |
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35V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.75mA @ 35V | 900pF @ 5V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 155°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 3V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock5,968 |
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600V | 8A | 3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 10A 5DFN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 45V
- Capacitance @ Vr, F: 300pF @ 45V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN, 5 Leads
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: 8-PowerTDFN, 5 Leads |
Stock2,240 |
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45V | 10A | 600mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 300pF @ 45V, 1MHz | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.5µs
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AC, DO-15, Axial |
Stock3,488 |
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200V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 3.5µs | 5µA @ 200V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Bourns Inc. |
DIODE SCHOTTKY 30V 200MA 0603
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30µA @ 30V
- Capacitance @ Vr, F: 12pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0603 (1608 Metric)
- Supplier Device Package: 0603
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: 0603 (1608 Metric) |
Stock6,976 |
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30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 30V | 12pF @ 10V, 1MHz | Surface Mount | 0603 (1608 Metric) | 0603 | -40°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO-219AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 40V
- Capacitance @ Vr, F: 115pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock6,304 |
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40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 115pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: T-18, Axial |
Stock4,320 |
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50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 9
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock7,952 |
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90V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 300MA SOD80
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 8ns
- Current - Reverse Leakage @ Vr: 25nA @ 20V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80 MiniMELF
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock1,440,000 |
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75V | 300mA | 1V @ 50mA | Fast Recovery =< 500ns, > 200mA (Io) | 8ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 50A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: 3174pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-247-2 |
Stock3,232 |
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1200V | 50A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3174pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 800V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock12,600 |
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800V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 200MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock9,096 |
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40 V | 200mA | 510 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 40 µA @ 40 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A SOD123W
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Capacitance @ Vr, F: 21pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 400 V | 21pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 150°C |
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Microchip Technology |
DIODE SCHOTTKY 45V 100A THINKEY1
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: ThinKey™1
- Supplier Device Package: ThinKey™1
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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45 V | 100A | 650 mV @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Surface Mount | ThinKey™1 | ThinKey™1 | -65°C ~ 150°C |
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Microchip Technology |
STD RECTIFIER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
RECTIFIER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 45A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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400 V | 45A | 1.15 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 200°C |
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Microchip Technology |
DIODE GEN PURP 200V 1A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 200 V
- Capacitance @ Vr, F: 45pF @ 12V, 1MHz
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A, Axial
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 2.2KV 6010A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 6010A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 4000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 mA @ 2200 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 160°C
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Package: - |
Request a Quote |
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2200 V | 6010A | 1 V @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 mA @ 2200 V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Taiwan Semiconductor Corporation |
2A, 90V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 90 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
|
90 V | 2A | 850 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 90 V | - | Surface Mount | SOD-123 | Sub SMA | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE GP 200V 250MA DFN1006BD-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 200 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: DFN1006BD-2
- Operating Temperature - Junction: 150°C
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Package: - |
Stock7,935 |
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200 V | 250mA | 1.25 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 200 V | 2pF @ 0V, 1MHz | Surface Mount | SOD-882 | DFN1006BD-2 | 150°C |
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Microchip Technology |
DIODE GEN PURP 100V 2.5A D-5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2.5A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
|
100 V | 2.5A | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 60A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 54 ns
- Current - Reverse Leakage @ Vr: 25 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 54 ns | 25 µA @ 600 V | - | Through Hole | TO-247-3 | TO-247AD | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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60 V | 5A | 700 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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