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Comchip Technology |
DIODE GEN PURP 100V 1A SOD123H
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123H
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123H |
Stock3,136 |
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100V | 1A (DC) | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Surface Mount | SOD-123H | SOD-123H | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 3A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 85ns
- Current - Reverse Leakage @ Vr: 3µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,240 |
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600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 3µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A DO204AR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 550µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AR, Axial
- Supplier Device Package: DO-204AR
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-204AR, Axial |
Stock5,376 |
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60V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550µA @ 60V | - | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 600V 140A HALF-PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 140A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 140A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140ns
- Current - Reverse Leakage @ Vr: 40µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67 HALF-PAK
- Supplier Device Package: HALF-PAK
- Operating Temperature - Junction: -
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Package: D-67 HALF-PAK |
Stock5,728 |
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600V | 140A | 1.6V @ 140A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 40µA @ 600V | - | Chassis Mount | D-67 HALF-PAK | HALF-PAK | - |
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Infineon Technologies Industrial Power and Controls Americas |
DIODE RECITIFER 2800V 1900A
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock2,384 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 2.8KV 540A D200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2800V
- Current - Average Rectified (Io): 540A
- Voltage - Forward (Vf) (Max) @ If: 2.08V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 2800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, PUK
- Operating Temperature - Junction: -
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Package: DO-200AA, A-PUK |
Stock6,352 |
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2800V | 540A | 2.08V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 2800V | - | Chassis Mount | DO-200AA, A-PUK | DO-200AA, PUK | - |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 400V 1400A B-43
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1400A
- Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 35mA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: B-43, PUK
- Supplier Device Package: B-43, Hockey PUK
- Operating Temperature - Junction: -
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Package: B-43, PUK |
Stock5,392 |
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400V | 1400A | 1.31V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 35mA @ 400V | - | Stud Mount | B-43, PUK | B-43, Hockey PUK | - |
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IXYS |
DIODE GEN 1.2KV 30A ISOPLUS220
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 45A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220?
- Supplier Device Package: ISOPLUS220?
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: ISOPLUS220? |
Stock4,592 |
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1200V | 30A | 1.45V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | ISOPLUS220? | ISOPLUS220? | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 3A, 500V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 500V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock6,800 |
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500V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Nexperia USA Inc. |
PMEG2020EJ/SOD323/SOD2
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock3,664 |
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- | - | - | - | - | - | - | - | - | - | - |
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TSC America Inc. |
DIODE, 1A, 100V, DO-204AL (DO-41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock7,568 |
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100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: A, Axial |
Stock6,036 |
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200V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Through Hole | A, Axial | - | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 200MA SOD523
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 50µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SC-79, SOD-523 |
Stock2,832 |
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40V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 50µA @ 20V | - | Surface Mount | SC-79, SOD-523 | SOD-523 | -65°C ~ 150°C |
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Microchip Technology |
HERMETICALLY SEALED GLASS RECTIF
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
DIODE GEN PURP 600V 35A DO21
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Press Fit
- Package / Case: DO-208AA
- Supplier Device Package: DO-21
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 35A | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | - | Press Fit | DO-208AA | DO-21 | -65°C ~ 175°C |
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Bourns Inc. |
DIODE GEN PURP 1KV 3A 2SMD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 23pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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1000 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 23pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 100V 3A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 100 V
- Capacitance @ Vr, F: 175pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 3A | 800 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 100 V | 175pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -40°C ~ 150°C |
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Diodes Incorporated |
DIODE GENERAL PURPOSE SOT23
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 28 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (DPAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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200 V | 4A | 840 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 28 ns | 100 µA @ 200 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK) | -55°C ~ 175°C |
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Comchip Technology |
DIODE GEN PURP 100V 150MA SOD123
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: 150°C
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Package: - |
Stock231,381 |
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100 V | 150mA | 1.25 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 150°C |
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Good-Ark Semiconductor |
DIODE, SWITCHING, 200MA, 250V, S
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 200 V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock18,000 |
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250 V | 200mA | 1.25 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 200 V | 5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 300V 5A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 300 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
|
300 V | 5A | 1.27 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 300 V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Panjit International Inc. |
DIODE GEN PURP 100V 200MA SOD123
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 100 V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock3,561 |
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100 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 100 V | 5pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 150°C |
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Renesas |
HSC119 - RECTIFIER DIODE, 1 ELEM
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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EIC SEMICONDUCTOR INC. |
DIODE GEN PURP 200V 5A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
200 V | 5A | 1.1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 600V 1A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2 µs
- Current - Reverse Leakage @ Vr: 500 nA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A, Axial
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | Through Hole | A, Axial | A, Axial | -65°C ~ 200°C |
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Microchip Technology |
DIODE SCHOTTKY 70V 33MA DO35
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70 V
- Current - Average Rectified (Io): 33mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 nA @ 50 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-204AH (DO-35)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
|
70 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-204AH (DO-35) | -65°C ~ 150°C |
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Wolfspeed, Inc. |
SIC, SCHOTTKY DIODE,20A, 650V, T
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock1,974 |
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650 V | 20A | 1.27 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |