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Rohm Semiconductor |
DIODE SCHOTTKY SSOP3
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock4,096 |
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- | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
DIODE GEN PURP 50V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock2,832 |
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50V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 1200V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock5,504 |
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1200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1200V | 7pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 100V 1A DO204AL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 830mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock4,864 |
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100V | 1A | 830mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Comchip Technology |
DIODE SCHOTTKY 150V 1A SOD123T
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 150V
- Capacitance @ Vr, F: 120pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123T
- Supplier Device Package: SOD-123T
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123T |
Stock2,432 |
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150V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 150V | 120pF @ 4V, 1MHz | Surface Mount | SOD-123T | SOD-123T | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 1KV 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock7,648 |
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1000V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Powerex Inc. |
DIODE MODULE 200V 1200A DO200AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1200A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25µs
- Current - Reverse Leakage @ Vr: 150mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: DO-200AB, B-PUK
- Operating Temperature - Junction: -
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Package: DO-200AB, B-PUK |
Stock6,032 |
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200V | 1200A | 1.45V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 25µs | 150mA @ 200V | - | Chassis Mount | DO-200AB, B-PUK | DO-200AB, B-PUK | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 40A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 125A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4.5mA @ 1400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -65°C ~ 160°C
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Package: DO-203AB, DO-5, Stud |
Stock7,888 |
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1400V | 40A | 1.5V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 160°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 650V 6A TO220-2L
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 90µA @ 650V
- Capacitance @ Vr, F: 35pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-220-2 |
Stock6,336 |
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650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | 35pF @ 650V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C (Max) |
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SMC Diode Solutions |
DIODE GEN PURP 600V 20A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock7,824 |
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600V | 20A | 2V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | TO-220-2 | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.8A TO277A
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 44pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock3,024 |
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600V | 1.8A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Sanken |
DIODE GEN PURP 200V 1.5A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock6,688 |
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200V | 1.5A | 920mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 600V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-214AA, SMB |
Stock6,304 |
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600V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE 1A 1000V 75NS DO-41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: 17pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock6,864 |
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1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 680mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock6,768 |
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60V | 3A | 680mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A MICROSMP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250µA @ 30V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: MicroSMP
- Supplier Device Package: MicroSMP
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: MicroSMP |
Stock3,269,916 |
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30V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 30V | 65pF @ 4V, 1MHz | Surface Mount | MicroSMP | MicroSMP | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 1A 60V SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock142,776 |
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60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 40V SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: 680mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: 230pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock760,932 |
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40V | - | 680mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 230pF @ 5V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 250MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 710mV @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3ns
- Current - Reverse Leakage @ Vr: 10µA @ 40V
- Capacitance @ Vr, F: 4pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SC-76, SOD-323 |
Stock935,640 |
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40V | 250mA (DC) | 710mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 3ns | 10µA @ 40V | 4pF @ 5V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
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Power Integrations |
DIODE SCHOTTKY 600V 12A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 3.1V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 11.6ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 |
Stock5,408 |
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600V | 12A | 3.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 11.6ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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Diodes Incorporated |
DIODE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 350mA
- Voltage - Forward (Vf) (Max) @ If: 810 mV @ 350 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.6 ns
- Current - Reverse Leakage @ Vr: 12 µA @ 30 V
- Capacitance @ Vr, F: 3.3pF @ 25V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: 125°C
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Package: - |
Request a Quote |
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40 V | 350mA | 810 mV @ 350 mA | Fast Recovery =< 500ns, > 200mA (Io) | 1.6 ns | 12 µA @ 30 V | 3.3pF @ 25V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | 125°C |
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Taiwan Semiconductor Corporation |
SOT-23, 350V, 0.225A, SWITCHING
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 350 V
- Current - Average Rectified (Io): 225mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 240 V
- Capacitance @ Vr, F: 5pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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350 V | 225mA | 1.25 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 240 V | 5pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 6KV 200MA DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 6000 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 5 V @ 500 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.2 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 6000 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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6000 V | 200mA | 5 V @ 500 mA | Small Signal =< 200mA (Io), Any Speed | 1.2 µs | 5 µA @ 6000 V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 45V 3A DO221AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 45 V
- Capacitance @ Vr, F: 180pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: DO-221AC (SMA-FL)
- Operating Temperature - Junction: -50°C ~ 125°C
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Package: - |
Request a Quote |
|
45 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 45 V | 180pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SMA-FL) | -50°C ~ 125°C |
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Microchip Technology |
SIGNAL OR COMPUTER DIODE
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
DIODE GEN PURP 350V 10A LPDS
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 350 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 350 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: LPDS
- Operating Temperature - Junction: 150°C
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Package: - |
Stock2,955 |
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350 V | 10A | 1.5 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 350 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | LPDS | 150°C |
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Semtech Corporation |
DIODE GEN PURP 125V 300MA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 125 V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4.5 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 125 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
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125 V | 300mA | 800 mV @ 10 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 500 nA @ 125 V | - | Surface Mount | SQ-MELF | - | - |
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Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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40 V | 2A | 500 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |