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Powerex Inc. |
DIODE GEN PURP 1.8KV 300A DO200
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 9µs
- Current - Reverse Leakage @ Vr: 50mA @ 1800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, R62
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-200AA, A-PUK |
Stock6,944 |
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1800V | 300A | 2.15V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 9µs | 50mA @ 1800V | - | Chassis, Stud Mount | DO-200AA, A-PUK | DO-200AA, R62 | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock6,048 |
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300V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 2A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-214AA, SMB |
Stock3,248 |
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20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
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Comchip Technology |
DIODE SCHOTTKY 60V 5A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: 380pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-214AC, SMA |
Stock2,784 |
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60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 380pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO219AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 780ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-219AB |
Stock4,176 |
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400V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 5µA @ 400V | 7.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 20V 250MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 20V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock2,112 |
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20V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 20V | 1.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1.5A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 30V
- Capacitance @ Vr, F: 130pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-220AA |
Stock828,000 |
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30V | 1.5A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 130pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 150A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 35mA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock6,080 |
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400V | 150A | 1.33V @ 471A | Standard Recovery >500ns, > 200mA (Io) | - | 35mA @ 400V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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Central Semiconductor Corp |
DIODE GEN PURP 600V 3A SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AB, SMC |
Stock2,640 |
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600V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 600V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE SBR 30V 2A POWERDI123
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: POWERDI?123
- Supplier Device Package: PowerDI? 123
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: POWERDI?123 |
Stock3,005,172 |
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30V | 2A | 450mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | POWERDI?123 | PowerDI? 123 | -65°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 100V 250MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock308,106 |
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100V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
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Micro Commercial Co |
DIODE SCHOTTKY 30V 100MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 25V
- Capacitance @ Vr, F: 7pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SC-76, SOD-323 |
Stock42,240 |
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30V | 100mA | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 25V | 7pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 40V 15A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: 500pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AB, SMC |
Stock121,308 |
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40V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 500pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 125°C |
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Panjit International Inc. |
DIODE SCHOTTKY 30V 3A SMAF-C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 460 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAF-C
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock8,475 |
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30 V | 3A | 460 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | Surface Mount | DO-221AC, SMA Flat Leads | SMAF-C | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 100V 1A PWRDI123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 350 nA @ 100 V
- Capacitance @ Vr, F: 36pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: POWERDI®123
- Supplier Device Package: PowerDI™ 123
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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100 V | 1A | 770 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 nA @ 100 V | 36pF @ 5V, 1MHz | Surface Mount | POWERDI®123 | PowerDI™ 123 | -55°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 100V 3A B AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 400pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: B, Axial
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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100 V | 3A | 1.1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 100 V | 400pF @ 0V, 1MHz | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |
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Diotec Semiconductor |
IC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: P600, Axial
- Supplier Device Package: P-600
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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45 V | 20A | 550 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 45 V | - | Through Hole | P600, Axial | P-600 | -50°C ~ 150°C |
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Diotec Semiconductor |
DIODE SCHOTT 60V 3A DO214AC SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA/DO-214AC
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Stock41,511 |
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60 V | 3A | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | - | Surface Mount | DO-214AC, SMA | SMA/DO-214AC | -50°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 100V 8A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 8A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 12 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 60 V
- Capacitance @ Vr, F: 67pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: POWERDI®123
- Supplier Device Package: PowerDI™ 123
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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60 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 12 ns | 100 µA @ 60 V | 67pF @ 10V, 1MHz | Surface Mount | POWERDI®123 | PowerDI™ 123 | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 3A SOD123W
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock219,387 |
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45 V | 3A | 470 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | - | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 150°C |
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Microchip Technology |
DIODE GP 600V 500MA A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 400 ns
- Current - Reverse Leakage @ Vr: 3 µA @ 600 V
- Capacitance @ Vr, F: 40pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A, Axial
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
600 V | 500mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 3 µA @ 600 V | 40pF @ 0V, 1MHz | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
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onsemi |
SS SOT23 SWCH DIO SPCL
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 600V 15A DIE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Request a Quote |
|
600 V | 15A | 1.6 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
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EIC SEMICONDUCTOR INC. |
DIODE SCHOTTKY 100V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
100 V | 3A | 790 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Rohm Semiconductor |
DIODE SIL CARB 650V 15A TO220FM
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 75 µA @ 650 V
- Capacitance @ Vr, F: 750pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FM
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock402 |
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650 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 750pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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Solid State Inc. |
DIODE GEN PURP 300V 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 300 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 190°C
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Package: - |
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300 V | 12A | 1 V @ 12 A | Standard Recovery >500ns, > 200mA (Io) | - | 500 µA @ 300 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 190°C |
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WeEn Semiconductors |
DIODE GEN PURP 1.6KV 8A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: 150°C
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Package: - |
Stock80,724 |
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1600 V | 8A | 1.25 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1600 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | 150°C |