Page 1851 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

R7001803XXUA
Powerex Inc.

DIODE GEN PURP 1.8KV 300A DO200

Package: DO-200AA, A-PUK

Stock6,944
ES2GHE3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 2A DO214AA

Package: DO-214AA, SMB

Stock6,048
SS22/1
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 2A DO214AA

Package: DO-214AA, SMB

Stock3,248
CDBA560-HF
Comchip Technology

DIODE SCHOTTKY 60V 5A DO214AC

Package: DO-214AC, SMA

Stock2,784
SE10FG-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO219AB

Package: DO-219AB

Stock4,176
BAV17-TR
Vishay Semiconductor Diodes Division

DIODE GEN PURP 20V 250MA DO35

Package: DO-204AH, DO-35, Axial

Stock2,112
SS1P3L-M3/84A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1.5A DO220AA

Package: DO-220AA

Stock828,000
VS-150K40A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 150A DO205AA

Package: DO-205AA, DO-8, Stud

Stock6,080
CMR3U-06M TR13
Central Semiconductor Corp

DIODE GEN PURP 600V 3A SMC

Package: DO-214AB, SMC

Stock2,640
SBR2A30P1-7
Diodes Incorporated

DIODE SBR 30V 2A POWERDI123

Package: POWERDI?123

Stock3,005,172
SMBD914E6327HTSA1
Infineon Technologies

DIODE GEN PURP 100V 250MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock308,106
SD107WS-TP
Micro Commercial Co

DIODE SCHOTTKY 30V 100MA SOD323

Package: SC-76, SOD-323

Stock42,240
SK154-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 15A DO214AB

Package: DO-214AB, SMC

Stock121,308
SBA330AFC_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 30V 3A SMAF-C

Package: -

Stock8,475
DFLS1100-7-G
Diodes Incorporated

DIODE SCHOTTKY 100V 1A PWRDI123

Package: -

Request a Quote
UTR3310
Microchip Technology

DIODE GEN PURP 100V 3A B AXIAL

Package: -

Request a Quote
20SQ045-3G
Diotec Semiconductor

IC

Package: -

Request a Quote
SK36SMA-3G
Diotec Semiconductor

DIODE SCHOTT 60V 3A DO214AC SMA

Package: -

Stock41,511
GIB1402HE3_A-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

Package: -

Request a Quote
DFLS160Q-7-2478
Diodes Incorporated

DIODE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
R7001803XXUA	Powerex Inc.	DIODE GEN PURP 1.8KV 300A DO200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 9µs Current - Reverse Leakage @ Vr: 50mA @ 1800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-200AA, A-PUK	Stock6,944	1800V	300A	2.15V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	9µs	50mA @ 1800V	-	Chassis, Stud Mount	DO-200AA, A-PUK	DO-200AA, R62	-65°C ~ 200°C
ES2GHE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock6,048	300V	2A	1.1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS22/1	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-214AA, SMB	Stock3,248	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 125°C
CDBA560-HF	Comchip Technology	DIODE SCHOTTKY 60V 5A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 380pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C	Package: DO-214AC, SMA	Stock2,784	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	380pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 150°C
SE10FG-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock4,176	400V	1A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	5µA @ 400V	7.5pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
BAV17-TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 20V 250MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 20V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock2,112	20V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 20V	1.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
SS1P3L-M3/84A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1.5A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-220AA	Stock828,000	30V	1.5A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	130pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
VS-150K40A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock6,080	400V	150A	1.33V @ 471A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 400V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
CMR3U-06M TR13	Central Semiconductor Corp	DIODE GEN PURP 600V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AB, SMC	Stock2,640	600V	3A	1.4V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 600V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
SBR2A30P1-7	Diodes Incorporated	DIODE SBR 30V 2A POWERDI123 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -65°C ~ 150°C	Package: POWERDI?123	Stock3,005,172	30V	2A	450mV @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	POWERDI?123	PowerDI? 123	-65°C ~ 150°C
SMBD914E6327HTSA1	Infineon Technologies	DIODE GEN PURP 100V 250MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock308,106	100V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
SD107WS-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 100MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 25V Capacitance @ Vr, F: 7pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	Package: SC-76, SOD-323	Stock42,240	30V	100mA	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 25V	7pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
SK154-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 15A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 500pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AB, SMC	Stock121,308	40V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	500pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
SBA330AFC_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 30V 3A SMAF-C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,475	30 V	3A	460 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C
DFLS1100-7-G	Diodes Incorporated	DIODE SCHOTTKY 100V 1A PWRDI123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 350 nA @ 100 V Capacitance @ Vr, F: 36pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI®123 Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	100 V	1A	770 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 nA @ 100 V	36pF @ 5V, 1MHz	Surface Mount	POWERDI®123	PowerDI™ 123	-55°C ~ 175°C
UTR3310	Microchip Technology	DIODE GEN PURP 100V 3A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 400pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	3A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 100 V	400pF @ 0V, 1MHz	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
20SQ045-3G	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P-600 Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	45 V	20A	550 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	-	Through Hole	P600, Axial	P-600	-50°C ~ 150°C
SK36SMA-3G	Diotec Semiconductor	DIODE SCHOTT 60V 3A DO214AC SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Stock41,511	60 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 60 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
GIB1402HE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 100V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	100 V	8A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 150°C
DFLS160Q-7-2478	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 67pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI®123 Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	60 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	12 ns	100 µA @ 60 V	67pF @ 10V, 1MHz	Surface Mount	POWERDI®123	PowerDI™ 123	-65°C ~ 150°C
TSSW3U45	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 3A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock219,387	45 V	3A	470 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
UTR60-TR	Microchip Technology	DIODE GP 600V 500MA A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Current - Reverse Leakage @ Vr: 3 µA @ 600 V Capacitance @ Vr, F: 40pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	500mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	3 µA @ 600 V	40pF @ 0V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
SMBD1500LT1	onsemi	SS SOT23 SWCH DIO SPCL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SIDC06D60F6X7SA1	Infineon Technologies	DIODE GEN PURP 600V 15A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	600 V	15A	1.6 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
SB3B0-T-R	EIC SEMICONDUCTOR INC.	DIODE SCHOTTKY 100V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	100 V	3A	790 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
SCS315AMC	Rohm Semiconductor	DIODE SIL CARB 650V 15A TO220FM Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 75 µA @ 650 V Capacitance @ Vr, F: 750pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max)	Package: -	Stock402	650 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	750pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FM	175°C (Max)
MR1123R	Solid State Inc.	DIODE GEN PURP 300V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 190°C	Package: -	Request a Quote	300 V	12A	1 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	500 µA @ 300 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 190°C
WND08P16DJ	WeEn Semiconductors	DIODE GEN PURP 1.6KV 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: 150°C	Package: -	Stock80,724	1600 V	8A	1.25 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	150°C