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Central Semiconductor Corp |
DIODE ZENER 1W DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 250V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-204AL, DO-41, Axial |
Stock5,776 |
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250V | 200mA | 1V @ 100mA | - | - | 50nA @ 250V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: 28pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -50°C ~ 125°C
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Package: DO-201AD, Axial |
Stock3,248 |
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800V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 125°C |
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Comchip Technology |
DIODE SCHOTTKY 80V 2A SOD123S
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 80V
- Capacitance @ Vr, F: 160pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123S
- Supplier Device Package: SOD-123S
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123S |
Stock3,776 |
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80V | 2A (DC) | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 80V | 160pF @ 4V, 1MHz | Surface Mount | SOD-123S | SOD-123S | -55°C ~ 150°C |
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NXP |
DIODE GEN PURP 600V 8A TO220F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 135ns
- Current - Reverse Leakage @ Vr: 400µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: TO-220FP
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock4,304 |
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600V | 8A | 1.85V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 400µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 80V TO-263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700µA @ 80V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,848 |
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80V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 80V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 600V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-214AB, SMC |
Stock6,704 |
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600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2µA @ 200V
- Capacitance @ Vr, F: 42pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock7,888 |
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100V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2µA @ 200V | 42pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 6
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock4,752 |
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60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE STD REC 600V DO219AB-M
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 700mA
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1800ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock4,528 |
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600V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1800ns | 10µA @ 600V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 2A, 600V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock6,160 |
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600V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 70V 70MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 70V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-76, SOD-323 |
Stock3,904 |
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70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 70V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 50A TO263-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 50A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 243ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock13,518 |
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1200V | 50A (DC) | 2.15V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 243ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 100MA VMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500nA @ 10V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: VMD2
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, Flat Lead |
Stock2,835,240 |
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30V | 100mA | 450mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 10V | - | Surface Mount | 2-SMD, Flat Lead | VMD2 | 125°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 600V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AA, DO-27, Axial |
Stock2,669,964 |
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600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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NTE Electronics, Inc |
DIODE GEN PURP 800V 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 12 mA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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800 V | 12A | 1.26 V @ 38 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 800 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 225V 500MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 nA @ 225 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-204AH (DO-35)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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225 V | 500mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 225 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-204AH (DO-35) | -65°C ~ 175°C |
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IXYS |
DIODE GEN PURP 4.5KV 659A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 659A
- Voltage - Forward (Vf) (Max) @ If: 3 V @ 1400 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4.2 µs
- Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
Request a Quote |
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4500 V | 659A | 3 V @ 1400 A | Standard Recovery >500ns, > 200mA (Io) | 4.2 µs | 100 mA @ 4500 V | - | Clamp On | DO-200AB, B-PUK | W4 | -40°C ~ 125°C |
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Micro Commercial Co |
DIODE GEN PURP 150V 6A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 150 V
- Capacitance @ Vr, F: 120pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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150 V | 6A | 975 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | 120pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 5KV 200MA DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 5000 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 5000 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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5000 V | 200mA | 5 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 5000 V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: R-6, Axial
- Supplier Device Package: R-6
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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200 V | 10A | 1.2 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | 150pF @ 4V, 1MHz | Through Hole | R-6, Axial | R-6 | -55°C ~ 150°C |
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Diotec Semiconductor |
IC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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1000 V | 15A | 1.3 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1000 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -50°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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150 V | 10A | 900 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 150 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 150°C |
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Good-Ark Semiconductor |
RECTIFIER, SCHOTTKY, 2A, 30V, DO
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 30 V
- Capacitance @ Vr, F: 175pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock18,000 |
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30 V | 2A | 400 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 30 V | 175pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
50NS, 1A, 200V, HIGH EFFICIENT R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 16pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock60,000 |
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200 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 1 µA @ 200 V | 16pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 100V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Stock29,499 |
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100 V | 3A | 800 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 100 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock4,005 |
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200 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 800V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Stock15,000 |
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800 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 120V 5A DO221AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400 µA @ 120 V
- Capacitance @ Vr, F: 360pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: DO-221AC (SlimSMA)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock41,874 |
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120 V | 5A | 880 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 120 V | 360pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 150°C |