Page 302 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

A180B
Powerex Inc.

DIODE GEN PURP 200V 150A DO205AA

Package: DO-205AA, DO-8, Stud

Stock6,720
VS-72HF20
Vishay Semiconductor Diodes Division

DIODE STD REC ISO LEAD 70A DO5

Package: DO-203AB, DO-5, Stud

Stock5,616
FFPF08S60STTU
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 8A TO220

Package: TO-220-2 Full Pack

Stock6,928
MBRB760-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 7.5A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,192
RGP30G-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Package: DO-201AD, Axial

Stock5,664
FERD20S100SB-TR
STMicroelectronics

FIELD-EFFECT RECTIFIER DIODE 100

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,536
VSB3200S-M3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 200V 3A DO204AC

Package: DO-204AC, DO-15, Axial

Stock3,952
EGP20D-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO204AC

Package: DO-204AC, DO-15, Axial

Stock3,568
BYD33JGPHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock7,504
CFRA106-G
Comchip Technology

DIODE GEN PURP 800V 1A DO214AC

Package: DO-214AC, SMA

Stock2,752
SCS210KE2C
Rohm Semiconductor

DIODE SCHOTTKY 1200V 10A TO247

Package: TO-247-3

Stock6,832
VS-60EPF12PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 60A TO247AC

Package: TO-247-2

Stock7,692
1N2055
Solid State Inc.

DIODE GEN PURP 100V 275A DO9

Package: -

Request a Quote
R43120D
Microchip Technology

DIODE GP 1.2KV 150A DO205AA

Package: -

Request a Quote
SUF4005
Diotec Semiconductor

ULTRAFAST MELF 600V 1A 75NS 175C

Package: -

Request a Quote
DSB5818-TR
Microchip Technology

DIODE SCHOTTKY REV 30V 1A DO41

Package: -

Request a Quote
SF3006PTH
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 30A TO247AD

Package: -

Request a Quote
HS3FBH
Taiwan Semiconductor Corporation

50NS, 3A, 300V, HIGH EFFICIENT R

Package: -

Stock18,000
SS34-3HE3_B-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

Package: -

Request a Quote
JANTXV1N6620U-TR
Microchip Technology

DIODE GP 220V 1.2A A SQ-MELF

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
A180B	Powerex Inc.	DIODE GEN PURP 200V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock6,720	200V	150A	1.3V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 200V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
VS-72HF20	Vishay Semiconductor Diodes Division	DIODE STD REC ISO LEAD 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AB, DO-5, Stud	Stock5,616	200V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
FFPF08S60STTU	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 8A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2 Full Pack	Stock6,928	600V	8A	2.6V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
MBRB760-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 7.5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,192	60V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
RGP30G-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AD, Axial	Stock5,664	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
FERD20S100SB-TR	STMicroelectronics	FIELD-EFFECT RECTIFIER DIODE 100 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 780mV @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max)	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,536	100V	20A	780mV @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
VSB3200S-M3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 200V 3A DO204AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -40°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock3,952	200V	3A	1.4V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 200V	170pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-40°C ~ 150°C
EGP20D-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock3,568	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	70pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 150°C
BYD33JGPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock7,504	600V	1A	1.3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
CFRA106-G	Comchip Technology	DIODE GEN PURP 800V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 150°C (Max)	Package: DO-214AC, SMA	Stock2,752	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	150°C (Max)
SCS210KE2C	Rohm Semiconductor	DIODE SCHOTTKY 1200V 10A TO247 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max)	Package: TO-247-3	Stock6,832	1200V	10A (DC)	-	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-247-3	TO-247	175°C (Max)
VS-60EPF12PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-247-2	Stock7,692	1200V	60A	1.4V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	480ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
1N2055	Solid State Inc.	DIODE GEN PURP 100V 275A DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-9 Operating Temperature - Junction: -65°C ~ 190°C	Package: -	Request a Quote	100 V	275A	1.3 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 100 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-9	-65°C ~ 190°C
R43120D	Microchip Technology	DIODE GP 1.2KV 150A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	1200 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1200 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
SUF4005	Diotec Semiconductor	ULTRAFAST MELF 600V 1A 75NS 175C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF DO-213AB Operating Temperature - Junction: -50°C ~ 175°C	Package: -	Request a Quote	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB	-50°C ~ 175°C
DSB5818-TR	Microchip Technology	DIODE SCHOTTKY REV 30V 1A DO41 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO041, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -	Package: -	Request a Quote	30 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	Through Hole	DO-204AL, DO041, Axial	DO-41	-
SF3006PTH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 30A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	30A	1.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
HS3FBH	Taiwan Semiconductor Corporation	50NS, 3A, 300V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock18,000	300 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS34-3HE3_B-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 40V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
JANTXV1N6620U-TR	Microchip Technology	DIODE GP 220V 1.2A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220 V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 500 nA @ 220 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	220 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	500 nA @ 220 V	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 150°C
SK56BHE3-LTP	Micro Commercial Co	DIODE SCHOTTKY 60V 5A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock6,225	60 V	5A	750 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
VS-8ETH06-1PBF	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A TO262-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	8A	2.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	50 µA @ 600 V	-	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262-3	-65°C ~ 175°C
SK84LQ-TP	Micro Commercial Co	SCHOTTKY BARRIER RECTIFIERS 40V Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 480pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock17,868	40 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	480pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS5BC-HF	Comchip Technology	DIODE GEN PURP 100V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	5A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SF34G-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
ER3A_R1_00001	Panjit International Inc.	DIODE GEN PURP 50V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 50 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 50 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
JANTXV1N5552US-TR	Microchip Technology	DIODE GEN PURP 600V 3A D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 175°C
JANTXV1N3893AR	Microchip Technology	DIODE GEN PURP 400V 20A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 38 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 115pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	20A	1.5 V @ 38 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 400 V	115pF @ 10V, 1MHz	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C