|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURPOSE DO-204AL
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Stock2,976 |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -50°C ~ 125°C
|
Package: DO-204AL, DO-41, Axial |
Stock6,000 |
|
200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 200V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 125°C |
|
|
Micro Commercial Co |
DIODE GEN PURP 600V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-201AD, Axial |
Stock4,944 |
|
600V | 4A | 1.35V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: DO-214AB, SMC |
Stock7,168 |
|
100V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
|
|
Fairchild/ON Semiconductor |
DIODE GEN PURP 50V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-201AD, Axial |
Stock1,332,444 |
|
50V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN 1.2KV 85A POWIRTAB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 85A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 190ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: PowerTab?, PowIRtab?
- Supplier Device Package: PowIRtab?
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: PowerTab?, PowIRtab? |
Stock3,024 |
|
1200V | 85A | 1.3V @ 85A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 1200V | - | Through Hole | PowerTab?, PowIRtab? | PowIRtab? | -40°C ~ 150°C |
|
|
Powerex Inc. |
DIODE GEN PURP 500V 275A DO205AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 275A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 12mA @ 500V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -65°C ~ 190°C
|
Package: DO-205AB, DO-9, Stud |
Stock5,536 |
|
500V | 275A | - | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 500V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 190°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 8A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,744 |
|
300V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, HIGH EFFICIENT, 8A, 50V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-220-2 |
Stock2,800 |
|
50V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-220-2 Full Pack, Isolated Tab |
Stock5,664 |
|
100V | 8A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 100V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 150°C |
|
|
Sanken |
DIODE GEN PURP 1KV 800MA AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: Axial |
Stock4,000 |
|
1000V | 800mA | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A SMA
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AC, SMA |
Stock4,432 |
|
200V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 1A MFLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: SOD-128 |
Stock4,464 |
|
200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GPP 1.5A 1000V DO-214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 1000V
- Capacitance @ Vr, F: 16pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AA, SMB |
Stock4,480 |
|
1000V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, 2A, 200V, AEC-Q101, DO-21
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AA, SMB |
Stock4,736 |
|
200V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, 2A, 200V, DO-15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-204AC, DO-15, Axial |
Stock3,424 |
|
200V | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 6ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,272 |
|
75V | 150mA | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 1µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA MINMELF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 500nA @ 25V
- Capacitance @ Vr, F: 7pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80 MiniMELF
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: DO-213AC, MINI-MELF, SOD-80 |
Stock270,000 |
|
30V | 200mA | 450mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | -55°C ~ 125°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 100V 2A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 8µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-214AA, SMB |
Stock799,512 |
|
100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8µA @ 100V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
|
|
Diodes Incorporated |
DIODE SCHOTTKY 40V 5A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: 300pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-214AB, SMC |
Stock138,504 |
|
40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
|
|
Microchip Technology |
DIODE SCHOTTKY 20V 25A DO4
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 350 µA @ 20 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4 (DO-203AA)
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
20 V | 25A | 1 V @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 20 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | - |
|
|
Microchip Technology |
STD RECTIFIER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Micro Commercial Co |
DIODE GEN PURP 600V 30A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Stock5,298 |
|
600 V | 30A | 2.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 200V 8A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
200 V | 8A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 175°C |
|
|
Microchip Technology |
DIODE GEN PURP 500V 1A A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A, Axial
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
500 V | 1A | 1 V @ 750 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 500 V | - | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
|
|
Solid State Inc. |
DIODE GEN PURP 800V 20A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
800 V | 20A | 1.2 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
Microchip Technology |
UFR,FRR
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Micro Commercial Co |
DIODE GEN PURP 100V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: - |
Request a Quote |
|
100 V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 100 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 150°C |